{"title":"Impact of IGBT emitter pad design and front-side aging on switching stability and temperature distribution","authors":"C. Bäumler, T. Basler","doi":"10.1016/j.microrel.2025.115738","DOIUrl":null,"url":null,"abstract":"<div><div>This work offers a comprehensive study on temperature determination and development of IGBTs via temperature-sensitive parameters (TSEPs) during repetitive switching events. The obtained information is discussed and judged with respect to accuracy for different device technologies. This evaluation is extended by the aspect of artificial front-side aging for different emitter-pad designs. For two different designs investigated, no decreased switching robustness could be verified, even beyond the AQG 324 [1] lifetime border, which is defined by a certain forward voltage drop increase.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115738"},"PeriodicalIF":1.6000,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001519","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This work offers a comprehensive study on temperature determination and development of IGBTs via temperature-sensitive parameters (TSEPs) during repetitive switching events. The obtained information is discussed and judged with respect to accuracy for different device technologies. This evaluation is extended by the aspect of artificial front-side aging for different emitter-pad designs. For two different designs investigated, no decreased switching robustness could be verified, even beyond the AQG 324 [1] lifetime border, which is defined by a certain forward voltage drop increase.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.