Preliminary 2D elastoplastic modeling of gate cracking in SiC MOSFETs under short-circuit conditions across a wide temperature-range using rankine's damage energetic approach

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-25 DOI:10.1016/j.microrel.2025.115757

Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau

引用次数: 0

Abstract

For the first time in SiC MOSFETs, structural and physical modeling of the Intermediate-Layer-Dielectric (ILD) cracking in a planar gate under short-pulse short-circuit conditions is proposed. This approach employs an energy-based Rankine damage model, relying on the SiO₂ mechanical properties. The Rankine model has been effectively integrated into a comprehensive 2D electrothermal-metallurgical and elastoplastic-mechanical model across a wide range of temperatures. Initial results enable the extraction of crack penetration depth from a single pulse, paving the way for estimating the average number of critical cycles leading to a potentially complete destructive ILD fracture.

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基于朗肯损伤能法的宽温度范围短路条件下SiC mosfet栅极开裂的初步二维弹塑性模型

在SiC mosfet中，首次提出了平面栅极在短脉冲短路条件下的中间层介电体（ILD）裂纹的结构和物理模型。该方法采用基于能量的朗肯损伤模型，依赖于SiO2的力学性能。Rankine模型已有效地集成到广泛温度范围内的综合二维电热-冶金和弹塑性-力学模型中。初步结果可以从单个脉冲中提取裂缝穿透深度，为估计导致潜在的完全破坏性ILD裂缝的平均临界循环次数铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.