{"title":"不同前驱体沉积的氧化铝层可用于不同的微电子应用","authors":"Vl. Kolkovsky, R. Stübner","doi":"10.1016/j.microrel.2025.115769","DOIUrl":null,"url":null,"abstract":"<div><div>Alumina thin films are widely used as barriers in HF etch processes in modern microelectronics. In various microelectronic applications, films deposited on driving electrodes of MEMS devices, such as those made of alumina, might be responsible for various charging effects leading to the degradation of actuator performances. This necessitates high-quality alumina layers with a low density of defects and interface states. In the present study, we compare the electrical properties of alumina layers deposited with different oxidants (ozone and water) using the atomic layer deposition technique. Capacitance-voltage measurements reveal that all as-deposited alumina layers contain negatively charged defects, but their concentration is significantly higher in layers prepared with ozone. The origin of these defects will be discussed. Furthermore, we demonstrate that the density of interface states in layers prepared with ozone is also significantly higher compared to those prepared with water. However, this can be optimized by varying the deposition temperature or the flow of O<sub>3</sub>. Such defects also influence current-voltage characteristics, which are also analysed in this study.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115769"},"PeriodicalIF":1.6000,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Alumina layers deposited with different precursors for different microelectronic applications\",\"authors\":\"Vl. Kolkovsky, R. Stübner\",\"doi\":\"10.1016/j.microrel.2025.115769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Alumina thin films are widely used as barriers in HF etch processes in modern microelectronics. In various microelectronic applications, films deposited on driving electrodes of MEMS devices, such as those made of alumina, might be responsible for various charging effects leading to the degradation of actuator performances. This necessitates high-quality alumina layers with a low density of defects and interface states. In the present study, we compare the electrical properties of alumina layers deposited with different oxidants (ozone and water) using the atomic layer deposition technique. Capacitance-voltage measurements reveal that all as-deposited alumina layers contain negatively charged defects, but their concentration is significantly higher in layers prepared with ozone. The origin of these defects will be discussed. Furthermore, we demonstrate that the density of interface states in layers prepared with ozone is also significantly higher compared to those prepared with water. However, this can be optimized by varying the deposition temperature or the flow of O<sub>3</sub>. Such defects also influence current-voltage characteristics, which are also analysed in this study.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"170 \",\"pages\":\"Article 115769\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2025-04-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271425001829\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001829","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Alumina layers deposited with different precursors for different microelectronic applications
Alumina thin films are widely used as barriers in HF etch processes in modern microelectronics. In various microelectronic applications, films deposited on driving electrodes of MEMS devices, such as those made of alumina, might be responsible for various charging effects leading to the degradation of actuator performances. This necessitates high-quality alumina layers with a low density of defects and interface states. In the present study, we compare the electrical properties of alumina layers deposited with different oxidants (ozone and water) using the atomic layer deposition technique. Capacitance-voltage measurements reveal that all as-deposited alumina layers contain negatively charged defects, but their concentration is significantly higher in layers prepared with ozone. The origin of these defects will be discussed. Furthermore, we demonstrate that the density of interface states in layers prepared with ozone is also significantly higher compared to those prepared with water. However, this can be optimized by varying the deposition temperature or the flow of O3. Such defects also influence current-voltage characteristics, which are also analysed in this study.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.