Microelectronics Reliability最新文献_第8页

Solder mask as a reliable insulation layer on printed circuit boards–different layouts and materials under humidity and high voltage 阻焊板作为印刷电路板上可靠的绝缘层-在潮湿和高压下，不同的布局和材料

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-22 DOI: 10.1016/j.microrel.2025.115743

M. Vogt , A. Brunko , M.R. Meier , H. Schweigart , L. Henneken , M. Schleicher , D. Schucht , N. Kaminski

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Improved device structure for electrical safe operating area in SiC 1700-V VDMOSFET 改进了SiC 1700 v VDMOSFET电气安全工作区的器件结构

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-18 DOI: 10.1016/j.microrel.2025.115749

Chao-Yang Ke, Ming-Dou Ker

{"title":"Improved device structure for electrical safe operating area in SiC 1700-V VDMOSFET","authors":"Chao-Yang Ke, Ming-Dou Ker","doi":"10.1016/j.microrel.2025.115749","DOIUrl":"10.1016/j.microrel.2025.115749","url":null,"abstract":"<div><div>This study provides significant advancements in SiC power device technology, improving the balance between high voltage, current handling, and reliability. The improved layout design of a SiC 1700-V vertical double-implanted MOSFET (VDMOSFET) with enhancing the characteristics of electrical safe operating (eSOA) and unclamped inductive switching (UIS) was carefully verified in this study. The experimental results show that the improved structure with an extended P+ region has a wider eSOA boundary. Furthermore, the improved structure can also tolerate higher power supply <em>V</em><sub><em>CC</em></sub>, higher switching current, and higher overshooting <em>V</em><sub><em>DS</em></sub> voltage. While the improved design sacrifices some DC performance, such as a slight increase in threshold voltage and on-resistance, it significantly boosts dynamic-switching reliability. All of the benefits can be attributed to the lower base resistance achieved by the layout design of an extended P+ region. Moreover, the experimental results from the double pulse test demonstrate that the proposed method did not compromise any switching speed or switching loss. Therefore, the improved structure without increasing manufacturing costs is recommended to enhance the robustness of dynamic switching in SiC 1700-V VDMOSFET.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"169 ","pages":"Article 115749"},"PeriodicalIF":1.6,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143844254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Bi, Ni and Ce coaddition improving shear property and interfacial growth of SAC305 solder joint on Cu substrate Bi、Ni和Ce的共添加改善了Cu衬底SAC305焊点的剪切性能和界面生长

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-18 DOI: 10.1016/j.microrel.2025.115752

Mi Wu, Li Fu, Lei Li, Peng Gao, Yingde Miao, Qian Zhou, Qiong Lu, Caiju Li

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Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: Analysis and hard-SOA 考虑RF阶跃应力自偏置效应的AlN/GaN HEMT非线性建模：分析与硬soa

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-18 DOI: 10.1016/j.microrel.2025.115742

N. Said , D. Saugnon , K. Harrouche , F. Medjdoub , N. Labat , N. Malbert , J.G. Tartarin

{"title":"Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: Analysis and hard-SOA","authors":"N. Said , D. Saugnon , K. Harrouche , F. Medjdoub , N. Labat , N. Malbert , J.G. Tartarin","doi":"10.1016/j.microrel.2025.115742","DOIUrl":"10.1016/j.microrel.2025.115742","url":null,"abstract":"<div><div>In this study, we investigate the non-linear (NL) behavior of AlN/GaN HEMT technologies under gain compression when submitted to 10 GHz single-tone RF-step stress, which is crucial for millimetre-wave power application robustness. We evaluate AlN/GaN transistors, targeting high-power amplifiers with operating frequency above 30 GHz. We present here an original method that includes, in a unique NL expression, the varying self-biasing effect caused by RF step-stress sequences. This methodology can be used as a tool for comparative analysis of technological variants and various transistor geometries post RF stress. The step-stresses are conducted on HEMT in saturated mode and in diode operation alone, to assess the electrical origins of defects and the critical Safe Operating Area (SOA) of these devices. We identify the mechanism of failure as stemming from the degradation of the Schottky gate when subjected to critical RF power levels, due to its constrained capacity to handle power signals exceeding 18 dBm. Furthermore, we highlight the remarkable RF robustness of this technology, achieving gain compression of around 10 dB without degradation.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"169 ","pages":"Article 115742"},"PeriodicalIF":1.6,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143844255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-event burnout mechanism and hardening for 1200 V 4H-SiC LDMOS 1200v 4H-SiC LDMOS单事件燃尽机制及硬化

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-16 DOI: 10.1016/j.microrel.2025.115712

Liqun Wang, Panpan Tang, Jingchang Nan

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Corrigendum to “Electrothermal power cycling of GaN and SiC cascode devices” [Microelectron. Reliab. 150 (November 2023) 115117] “GaN和SiC级联码器件的电热功率循环”的勘误表[微电子]。科学通报，2015（11月23日）

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-16 DOI: 10.1016/j.microrel.2025.115748

Y. Gunaydin , S. Jahdi , R. Yu , Xibo Yuan , Olayiwola Alatise , Jose Ortiz Gonzalez

引用次数: 0

Efficient long-term reliability assessment of planar InGaAs/InP avalanche photodiodes using accelerated step-stress test 利用加速阶跃应力试验评估平面InGaAs/InP雪崩光电二极管的长期可靠性

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-15 DOI: 10.1016/j.microrel.2025.115739

Yunseok Han , Sunho Kim , Ilgu Yun

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OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs 垂直GaN-on-Si沟槽mosfet的关断击穿和阈值电压稳定性

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-14 DOI: 10.1016/j.microrel.2025.115716

M. Fregolent , F. Bergamin , D. Favero , C. De Santi , Andrea Cester , C. Huber , G. Meneghesso , E. Zanoni , M. Meneghini

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On the electrical properties of ALD HfO2 dielectric films for MEMS capacitive switches MEMS电容开关用ALD HfO2介电膜电学性能研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-14 DOI: 10.1016/j.microrel.2025.115737

J. Theocharis , J.P. Martins , A. Mahjoub , E. Eustache , A. Ziaei , G. Papaioannou

{"title":"On the electrical properties of ALD HfO2 dielectric films for MEMS capacitive switches","authors":"J. Theocharis , J.P. Martins , A. Mahjoub , E. Eustache , A. Ziaei , G. Papaioannou","doi":"10.1016/j.microrel.2025.115737","DOIUrl":"10.1016/j.microrel.2025.115737","url":null,"abstract":"<div><div>This work investigates the electrical properties of thin HfO<sub>2</sub> dielectric films grown by Atomic Layer Deposition (ALD) for application in RF-MEMS capacitive switches. The motivation arises from the need to optimize dielectric performance in these devices, particularly concerning dielectric charging, breakdown behavior, and conduction mechanisms. A key challenge addressed is the influence of deposition temperature on the structural and electrical behavior of the films, which transitions from amorphous to polycrystalline with temperature. The study utilizes a wide range of techniques including current-voltage measurements, impedance spectroscopy, Kelvin Probe potential decay, and Thermally Stimulated Depolarization Currents (TSDC) on Metal–Insulator-Metal (MIM) devices. The key findings indicate that grain boundary formation in polycrystalline films significantly alters the breakdown voltage, charge transport, and trapping mechanisms. It is worth noting that, films deposited at 100–150 °C exhibit hopping conduction and lower leakage, while those at 200–250 °C demonstrate ohmic or Space Charge Limited Current (SCLC) behavior due to crystallization. These results provide insight for selecting suitable deposition parameters to engineer dielectric materials for reliable MEMS switch operation.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"169 ","pages":"Article 115737"},"PeriodicalIF":1.6,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143825915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of aging on temperature measurements performed using a resistive temperature sensor with sensor-to-microcontroller direct interface 老化对使用具有传感器-微控制器直接接口的电阻式温度传感器进行温度测量的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-14 DOI: 10.1016/j.microrel.2025.115729

Marco Grossi, Martin Omaña, Cecilia Metra

{"title":"Impact of aging on temperature measurements performed using a resistive temperature sensor with sensor-to-microcontroller direct interface","authors":"Marco Grossi, Martin Omaña, Cecilia Metra","doi":"10.1016/j.microrel.2025.115729","DOIUrl":"10.1016/j.microrel.2025.115729","url":null,"abstract":"<div><div>Temperature measurements play a critical role in guaranteeing system's reliability, for a widespread variety of applications, such as automotive, avionics, etc. Temperature measurements can be conveniently performed at low cost using resistive temperature sensors connected to a microcontroller using sensor-to-microcontroller direct interface (SMDI). However, temperature measurements performed using SMDI may be affected by aging phenomena, such as Bias Temperature Instability (BTI), which may compromise its operation in the field.</div><div>Based on these considerations, in this paper we address the case of temperature measurements performed by a resistive temperature sensor connected to a microcontroller by SMDI. We analyze the impact of BTI on the accuracy of the temperature measurements performed using SMDI. We will show that BTI can seriously degrade the accuracy of such measurements, with possible consequences for system's reliability. We then describe a possible strategy to compensate such a degraded accuracy in temperature measurements, thus avoiding its impact on system's reliability.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"169 ","pages":"Article 115729"},"PeriodicalIF":1.6,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143825916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0