Microelectronics Reliability最新文献

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Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115646
T. Adlmaier , S. Doering , B. Binder , D.K. Simon , T. Mikolajick , L.M. Eng
{"title":"Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy","authors":"T. Adlmaier ,&nbsp;S. Doering ,&nbsp;B. Binder ,&nbsp;D.K. Simon ,&nbsp;T. Mikolajick ,&nbsp;L.M. Eng","doi":"10.1016/j.microrel.2025.115646","DOIUrl":"10.1016/j.microrel.2025.115646","url":null,"abstract":"<div><div>In this study, we introduce an extended sample preparation workflow to enhance the two-dimensional (2D) charge carrier quantification via scanning spreading resistance microscopy (SSRM) for failure analysis and electrical device characterization. This is achieved by means of embedding a novel partial-staircase doping reference sample close to the area of interest prior to cross-sectioning the device. We subsequently demonstrate that this approach enhances the quantification reliability while reducing analysis time.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115646"},"PeriodicalIF":1.6,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PBO delamination and RDL corrosion detection on WLCSP package products
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115645
K. Bidaj , Y. Chen , J. Chang , O. Atance-Loustaunau , F. Braud , M. Medda
{"title":"PBO delamination and RDL corrosion detection on WLCSP package products","authors":"K. Bidaj ,&nbsp;Y. Chen ,&nbsp;J. Chang ,&nbsp;O. Atance-Loustaunau ,&nbsp;F. Braud ,&nbsp;M. Medda","doi":"10.1016/j.microrel.2025.115645","DOIUrl":"10.1016/j.microrel.2025.115645","url":null,"abstract":"<div><div>This paper presents a novel approach based on physical failures instead of electrical failures for PBO delamination and RDL corrosion detection.</div><div>Moreover, most effective reliability stress to generate such failure mechanisms are presented through theory and experimental trials.</div><div>This study can serve as a guideline for selecting the best reliability stress to detect PBO delamination or RDL corrosion issues in future qualifications.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115645"},"PeriodicalIF":1.6,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability prediction of electronic components based on physical of failure with manufacturing parameters fluctuations
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-08 DOI: 10.1016/j.microrel.2025.115662
Zijian Guo , Hao Chen , Yifan Hu , Ji Jiang , Xuerong Ye
{"title":"Reliability prediction of electronic components based on physical of failure with manufacturing parameters fluctuations","authors":"Zijian Guo ,&nbsp;Hao Chen ,&nbsp;Yifan Hu ,&nbsp;Ji Jiang ,&nbsp;Xuerong Ye","doi":"10.1016/j.microrel.2025.115662","DOIUrl":"10.1016/j.microrel.2025.115662","url":null,"abstract":"<div><div>Reliability prediction based on the physics of failure (PoF) methodology involves examining the physical variables that impact the performance parameters of electronic components, developing mathematical models to describe the evolution of these parameters, and predicting the components' reliable operational lifespan. However, the current PoF model does not account for the influence of manufacturing parameters, such as material properties and structural characteristics, which limits the accuracy of reliability predictions. Therefore, establishing a PoF model that incorporates manufacturing parameters is a critical challenge in enhancing reliability prediction accuracy. To overcome this limitation, an improved PoF model incorporating manufacturing parameters is proposed in this study. The study examines how the manufacturing parameters influence the PoF model, then develops an adapted PoF model that incorporates these factors for improved predictive accuracy. Then, a parameter estimation method based on Long Short-Term Memory (LSTM) is proposed, with the Hybrid Bat Algorithm (HBA) employed to adaptively optimize the network's parameters. Finally, the effectiveness of the proposed method is demonstrated through a case study on an electromagnetic relay. Compared to the actual lifespan, the reliability prediction model incorporating manufacturing parameters accurately estimates the relay's lifetime, achieving deviation of only 5.8 % at 100,000 cycles, thereby verifying the model is feasibility and effectiveness.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115662"},"PeriodicalIF":1.6,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wire bonding failure characterization of an IGBT based power module through impedance analysis
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-08 DOI: 10.1016/j.microrel.2025.115669
P.-E. Vidal , S. Baffreau , G. Viné , A. Gopishetti , T.L. Long
{"title":"Wire bonding failure characterization of an IGBT based power module through impedance analysis","authors":"P.-E. Vidal ,&nbsp;S. Baffreau ,&nbsp;G. Viné ,&nbsp;A. Gopishetti ,&nbsp;T.L. Long","doi":"10.1016/j.microrel.2025.115669","DOIUrl":"10.1016/j.microrel.2025.115669","url":null,"abstract":"<div><div>This study deals with the development of a wide-frequency-band characterization for failure analysis of power modules, focusing on a specific IGBT packaging. It is highlighted that different characteristics of the IGBT and the packaging can be distinguished depending on the frequency band analyzed, enabling the detection of potential failure modes. Particularly, for the power bond-wire lift-off mechanism, the paper emphasizes the importance of considering high-frequency analysis above 200 MHz. It is enabled through the definition of a failure indicator, demonstrating the ability to highlight partial failures as well as to localize them.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115669"},"PeriodicalIF":1.6,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115649
Riccardo Fraccaroli , Manuel Fregolent , Mirco Boito , Carlo De Santi , Eleonora Canato , Isabella Rossetto , Maria Eloisa Castagna , Cristina Miccoli , Alfio Russo , Ferdinando Iucolano , Alessio Pirani , Giansalvo Pizzo , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini
{"title":"Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase","authors":"Riccardo Fraccaroli ,&nbsp;Manuel Fregolent ,&nbsp;Mirco Boito ,&nbsp;Carlo De Santi ,&nbsp;Eleonora Canato ,&nbsp;Isabella Rossetto ,&nbsp;Maria Eloisa Castagna ,&nbsp;Cristina Miccoli ,&nbsp;Alfio Russo ,&nbsp;Ferdinando Iucolano ,&nbsp;Alessio Pirani ,&nbsp;Giansalvo Pizzo ,&nbsp;Gaudenzio Meneghesso ,&nbsp;Enrico Zanoni ,&nbsp;Matteo Meneghini","doi":"10.1016/j.microrel.2025.115649","DOIUrl":"10.1016/j.microrel.2025.115649","url":null,"abstract":"<div><div>We demonstrate the existence of two different degradation mechanisms for 100 V GaN transistors submitted to off-state stress. When the devices are stressed in strong pinch-off conditions, a high electric field falls on the dielectric between the source field plate and the channel, and a time dependent dielectric breakdown is observed. On the other hand, for weaker pinch-off, hot electrons trapping at the passivation surface can lower the electric field, leading to longer TTF. A second degradation mode is also observed, consisting in the gradual increase in off-state current, ascribed to positive charge trapping at defects spots.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115649"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115660
R. Carluccio , A. Mancaleoni , G. Losacco , R. Villa , A. Serafini , L. Guarino , D. Dellasega
{"title":"Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires","authors":"R. Carluccio ,&nbsp;A. Mancaleoni ,&nbsp;G. Losacco ,&nbsp;R. Villa ,&nbsp;A. Serafini ,&nbsp;L. Guarino ,&nbsp;D. Dellasega","doi":"10.1016/j.microrel.2025.115660","DOIUrl":"10.1016/j.microrel.2025.115660","url":null,"abstract":"<div><div>Copper has pervasively replaced gold as preferred wire bonding material in Integrated Circuits (IC) plastic packaging. Different types of wires are available today in the market, with specific annealing treatments, coating and doping solutions aimed at optimizing bondability and reliability performances of the joints. In this study, the electrical resistance drift of packaged daisy chains has been analyzed to compare the lifetime potential of pure and alloyed copper wires under accelerated High Temperature Storage (HTS). Two aluminum-based bond-pads with different composition and thickness have been included in the experimental matrix. The results obtained through this statistically efficient and non-destructive methodology have been correlated with more “classical” readout data based on wire pull test, polished cross sections for Inter-Metallic Compounds (IMC) thickness measurement and TEM lamellas for phases stoichiometry characterization. Comparative analysis of the drift plots has pointed out a specific electrical signature for the consumption of the aluminum source under the IMC joint, confirmed by a Finite Element Method (FEM) simulation. A systematic delay in the IMC evolution has been demonstrated in all the samples with alloyed copper wires, correlating their lower ohmic drift with a lower thickness and a different composition of the IMC phases growing during HTS.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115660"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability assurance in foldable displays: Design of experiment-based testing strategy for market-ready products
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115673
U.H. Jeong , S.Y. Lim , S.S. Han
{"title":"Reliability assurance in foldable displays: Design of experiment-based testing strategy for market-ready products","authors":"U.H. Jeong ,&nbsp;S.Y. Lim ,&nbsp;S.S. Han","doi":"10.1016/j.microrel.2025.115673","DOIUrl":"10.1016/j.microrel.2025.115673","url":null,"abstract":"<div><div>Foldable displays have many moving parts and can operate in different environments. These conditions lead to potential interactions between diverse failure mechanisms and stresses, making reliability assurance a major challenge. Ensuring reliability while considering all these potential failure mechanisms and stresses is very challenging. This paper introduces a method for efficiently evaluating the reliability and lifespan of foldable displays. First, potential failure modes associated with foldable displays were identified, and corresponding influencing factors were determined. In addition to the fundamental stress factor of repetitive folding, temperatures, humidity, and temperature changes were chosen as influencing factors. To assess the influence of these factors on the display performance, two levels of stress severity were selected. Using these three factors and two stress levels, experiments were conducted using the design of experiments (DOE) method. The test results intuitively revealed the principal effects of each stress factor on the final quality and performance of the display. We found that low temperatures and temperature changes can affect the catastrophic failure of the display panel, and the number of folds impacts the degradation of the hinge parts. The proposed DOE-based evaluation method provides an efficient and economical approach for assessing the reliability of foldable displays.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115673"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Degradation prediction of IGBT module based on CNN-LSTM network
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115639
Liangjun Bai, Meng Huang, Shangzhi Pan, Kang Li, Xiaoming Zha
{"title":"Degradation prediction of IGBT module based on CNN-LSTM network","authors":"Liangjun Bai,&nbsp;Meng Huang,&nbsp;Shangzhi Pan,&nbsp;Kang Li,&nbsp;Xiaoming Zha","doi":"10.1016/j.microrel.2025.115639","DOIUrl":"10.1016/j.microrel.2025.115639","url":null,"abstract":"<div><div>The reliability of insulated gate bipolar transistor (IGBT) directly affects the safe and stable operation of power electronic system. Based on the IGBT accelerated aging open data set provided by NASA PCoE, the peak collector-emitter voltage during IGBT shutdown is selected as the failure characteristic parameter. Convolutional neural network and long short-term memory network (CNN-LSTM) model is used to predict IGBT failure precursor parameters and estimate the degradation behavior of IGBT modules in this paper. The sliding window method is employed to construct input and output data. When the window width is 3, the prediction model works best. By running the proposed model many times, the average values of MAPE, MAE, MSE and RMSE of the CNN-LSTM network proposed in this paper are 0.0038,0.0468,0.0059,0.0600, which have higher accuracy than other networks. At the same time, the four indicators of the CNN-LSTM model are the most stable and the prediction credibility is higher through the box plot analysis. This prediction method provides a new idea for IGBT degradation behavior prediction.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115639"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of humidity protection behavior of protective coatings on PCB with components
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-06 DOI: 10.1016/j.microrel.2025.115672
Ioannis Mantis , Anish Rao Lakkaraju , Mike Bixenman , Kapil Kumar Gupta , Rajan Ambat
{"title":"Investigation of humidity protection behavior of protective coatings on PCB with components","authors":"Ioannis Mantis ,&nbsp;Anish Rao Lakkaraju ,&nbsp;Mike Bixenman ,&nbsp;Kapil Kumar Gupta ,&nbsp;Rajan Ambat","doi":"10.1016/j.microrel.2025.115672","DOIUrl":"10.1016/j.microrel.2025.115672","url":null,"abstract":"<div><div>In this work, humidity performance of two types of protective coatings was investigated on a PCB with typical components with the aim of understanding synergistic effect of coating/process and board design. Coatings are 2-component Polyurethane (PU, mixture of Ether and Ester polyols) and ultra-thin Plasma enhanced chemical vapor deposition (PECVD) coating. Test PCB used for testing consisted of components such as a Quad flat no‑lead package (QFN), Ball grid array (BGA), and Pin connector. The performance of coated PCB was evaluated in terms of process-induced no-clean flux residues introduced during reflow and wave soldering of components. The test profile used was constant humidity (95 %) condition with temperature cycling (40°C–65°C). Moisture permeation through the coatings and its effects on component performance was evaluated using electrochemical AC impedance and subsequent DC potentiostatic measurement under climatic exposure. Coating-PCB-Components interfaces were analyzed using Scanning electron microscopy (SEM) and Energy dispersive spectroscopy (EDS) before and after testing. The study revealed that the PCBA cleanliness after a soldering process is a major factor determining the coating performance, component geometrical shape and standoff height affected uniformity of coating and under-filling affecting humidity performance.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115672"},"PeriodicalIF":1.6,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143561561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New statistical analysis methodology to forecast the memory cell behavior before reliability test
IF 1.6 4区 工程技术
Microelectronics Reliability Pub Date : 2025-03-06 DOI: 10.1016/j.microrel.2025.115659
S. Perrin , V. Della Marca , T. Kempf , M. Bocquet , L. Welter , J.M. Moragues , A. Regnier , J.M. Portal
{"title":"New statistical analysis methodology to forecast the memory cell behavior before reliability test","authors":"S. Perrin ,&nbsp;V. Della Marca ,&nbsp;T. Kempf ,&nbsp;M. Bocquet ,&nbsp;L. Welter ,&nbsp;J.M. Moragues ,&nbsp;A. Regnier ,&nbsp;J.M. Portal","doi":"10.1016/j.microrel.2025.115659","DOIUrl":"10.1016/j.microrel.2025.115659","url":null,"abstract":"<div><div>In this paper, a machine learning method is proposed implementing the Principal Component Analysis to study the statistical EEPROM endurance degradation. This technique is firstly applied to an UV irradiated memory array. Then, the Density Based Spatial Clustering of Applications with Noise and the Gaussian Mixture Model are presented to extract the minority population of cells. The reliability test study demonstrated the ability of the proposed technique to correlate electrical parameters to forecast the quality and performance of a memory array. Compared to the classical threshold voltage (V<sub>th</sub>) analysis, this method is more effective for predicting which population will experience greater degradation.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115659"},"PeriodicalIF":1.6,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143552902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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