Bi, Ni and Ce coaddition improving shear property and interfacial growth of SAC305 solder joint on Cu substrate

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-18 DOI:10.1016/j.microrel.2025.115752

Mi Wu, Li Fu, Lei Li, Peng Gao, Yingde Miao, Qian Zhou, Qiong Lu, Caiju Li

引用次数: 0

Abstract

In this study, the shear property and interfacial growth of Sn-3.0Ag-0.5Cu (SAC305) and Sn-3.0Ag-0.5Cu-3Bi-0.05Ni-0.05Ce (SAC305-BNC) solder joints on Cu substrates during isothermal aging were investigated. The coaddition of Bi, Ni and Ce evidently enhanced shear strength of SAC305 alloy whether after aging or not, and changed the shear fracture from a transgranular failure to an intergranular failure. Cu₆Sn₅ intermetallic compound (IMC) layer formed in the SAC305/Cu solder joints, (Cu,Ni)₆Sn₅ and Cu₃Sn IMC layers formed in the SAC305/Cu solder joints. The growth rates of IMC layers were slowed, and the Cu₆Sn₅ grain size were refined by Bi, Ni and Ce coaddition during isothermal aging, thereby partly contributing to the increase of shear strength, and simultaneously improving the reliability of solder joints.

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Bi、Ni和Ce的共添加改善了Cu衬底SAC305焊点的剪切性能和界面生长

本文研究了Sn-3.0Ag-0.5Cu （SAC305）和Sn-3.0Ag-0.5Cu- 3bi -0.05 ni -0.05 ce （SAC305- bnc）焊点在Cu衬底上等温时效过程中的剪切性能和界面生长。无论时效与否，Bi、Ni和Ce的共添加均能显著提高SAC305合金的抗剪强度，并使其从沿晶断裂转变为沿晶断裂。SAC305/Cu焊点形成Cu6Sn5金属间化合物（IMC）层，SAC305/Cu焊点形成（Cu,Ni）6Sn5和Cu3Sn金属间化合物（IMC）层。在等温时效过程中，通过Bi、Ni和Ce的共添加，减缓了IMC层的生长速度，细化了Cu6Sn5的晶粒尺寸，从而在一定程度上提高了抗剪强度，同时提高了焊点的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.