Improved device structure for electrical safe operating area in SiC 1700-V VDMOSFET

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-18 DOI:10.1016/j.microrel.2025.115749

Chao-Yang Ke, Ming-Dou Ker

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引用次数: 0

Abstract

This study provides significant advancements in SiC power device technology, improving the balance between high voltage, current handling, and reliability. The improved layout design of a SiC 1700-V vertical double-implanted MOSFET (VDMOSFET) with enhancing the characteristics of electrical safe operating (eSOA) and unclamped inductive switching (UIS) was carefully verified in this study. The experimental results show that the improved structure with an extended P+ region has a wider eSOA boundary. Furthermore, the improved structure can also tolerate higher power supply V_CC, higher switching current, and higher overshooting V_DS voltage. While the improved design sacrifices some DC performance, such as a slight increase in threshold voltage and on-resistance, it significantly boosts dynamic-switching reliability. All of the benefits can be attributed to the lower base resistance achieved by the layout design of an extended P+ region. Moreover, the experimental results from the double pulse test demonstrate that the proposed method did not compromise any switching speed or switching loss. Therefore, the improved structure without increasing manufacturing costs is recommended to enhance the robustness of dynamic switching in SiC 1700-V VDMOSFET.

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改进了SiC 1700 v VDMOSFET电气安全工作区的器件结构

这项研究提供了SiC功率器件技术的重大进步，改善了高压，电流处理和可靠性之间的平衡。本研究对SiC 1700 v垂直双植入MOSFET （VDMOSFET）的改进布局设计进行了仔细验证，该设计增强了电气安全操作（eSOA）和无箝位电感开关（UIS）的特性。实验结果表明，扩展了P+区域的改进结构具有更宽的eSOA边界。此外，改进后的结构还可以承受更高的电源VCC、更高的开关电流和更高的过调VDS电压。虽然改进后的设计牺牲了一些直流性能，例如阈值电压和导通电阻的轻微增加，但它显著提高了动态开关的可靠性。所有的好处都可以归功于通过扩展P+区域的布局设计实现的较低的基极电阻。此外，双脉冲测试的实验结果表明，该方法不影响开关速度和开关损耗。因此，建议在不增加制造成本的情况下改进结构，以增强SiC 1700-V VDMOSFET动态开关的鲁棒性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.