OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-14 DOI:10.1016/j.microrel.2025.115716

M. Fregolent , F. Bergamin , D. Favero , C. De Santi , Andrea Cester , C. Huber , G. Meneghesso , E. Zanoni , M. Meneghini

引用次数: 0

Abstract

In this paper we analyze the OFF-state performance of vertical GaN-on-Si Trench MOSFETs in terms of breakdown voltage and stability of the threshold voltage. We proved that the devices fail in OFF-state due to the breakdown of the unprotected gate oxide. Then, by means of a series of fast V_TH transient experiments, we demonstrate that the OFF-state threshold voltage instability is given by the trapping of electrons at deep levels in the p-GaN body layer, transported by the rather high drain current leakage. The interpretation was supported by deep level spectroscopy measurements, carried out on p-n junctions located on the same wafer.

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垂直GaN-on-Si沟槽mosfet的关断击穿和阈值电压稳定性

本文分析了垂直硅基氮化镓沟槽 MOSFET 在击穿电压和阈值电压稳定性方面的关态性能。我们证明，器件在关断状态失效是由于未受保护的栅极氧化物击穿所致。然后，通过一系列快速 VTH 瞬态实验，我们证明了关断态阈值电压的不稳定性是由 p-GaN 体层深层电子的捕获以及相当高的漏极电流泄漏造成的。对位于同一晶片上的 p-n 结进行的深电平光谱测量也支持这一解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.