Efficient long-term reliability assessment of planar InGaAs/InP avalanche photodiodes using accelerated step-stress test

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-15 DOI:10.1016/j.microrel.2025.115739

Yunseok Han , Sunho Kim , Ilgu Yun

引用次数: 0

Abstract

This paper presents a novel methodology for the rapid long-term reliability assessment of planar InGaAs/InP avalanche photodiodes. To quickly obtain degradation data of highly reliable avalanche photodiode devices, hybrid stress combining thermal and electrical stresses was applied through the accelerated step-stress test methodology. The details of the structure of tested avalanche photodiodes, experimental setup, and accelerated step-stress test conditions were explained. Based on the results, a significant increase in dark current with applied stress was observed while the breakdown voltage remained almost stable. The expected median time to failure for each stress condition using accelerated step-stress test data was then extracted. Finally, using the modified Eyring model, the activation energy and predicted lifetime under the practical use condition were extrapolated.

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利用加速阶跃应力试验评估平面InGaAs/InP雪崩光电二极管的长期可靠性

本文提出了一种快速评估平面InGaAs/InP雪崩光电二极管长期可靠性的新方法。为了快速获得高可靠性雪崩光电二极管器件的退化数据，采用加速阶跃应力试验方法，对热应力和电应力相结合的混合应力进行了测试。详细介绍了雪崩光电二极管的结构、实验装置和加速阶跃应力测试条件。结果表明，在击穿电压几乎保持稳定的情况下，施加应力时暗电流显著增加。然后利用加速阶跃应力测试数据提取每种应力条件下的预期中值失效时间。最后，利用改进的Eyring模型外推了实际使用条件下的活化能和预测寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.