Single-event burnout mechanism and hardening for 1200 V 4H-SiC LDMOS

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-16 DOI:10.1016/j.microrel.2025.115712

Liqun Wang, Panpan Tang, Jingchang Nan

引用次数: 0

Abstract

In this paper, the Single-Event Burnout (SEB) triggering mechanism of 1200 V 4H-SiC Lateral Diffused Metal Oxide Semiconductor (LDMOS) is numerically studied based on Sentaurus TCAD electro-thermal coupled simulations. A hardened design of source-extended combined with a triple-buffer layer is proposed. Simulation results show that impact ionization plays an important role in the SEB triggering of SiC LDMOS. With the introduction of a triple-buffer layer that can effectively suppresses and integrates the peak electric field, thereby weakening impact ionization. Meanwhile, the source-extended can extract the holes rapidly and suppress the parasitic BJT positive feedback, thus avoiding the thermal damage caused by excessive current. Under the optimal parameters, the SEB threshold voltage (

V_{S E B}

) of the proposed structure is 259% higher than the conventional structure.

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1200v 4H-SiC LDMOS单事件燃尽机制及硬化

基于Sentaurus TCAD电-热耦合模拟，对1200 V 4H-SiC横向扩散金属氧化物半导体（LDMOS）的单事件烧坏（SEB）触发机制进行了数值研究。提出了一种结合三层缓冲层的源扩展强化设计。仿真结果表明，冲击电离在SiC LDMOS的SEB触发中起着重要作用。引入三重缓冲层，可以有效抑制和集成峰值电场，从而减弱冲击电离。同时，源扩展可以快速提取空穴，抑制寄生BJT正反馈，从而避免了电流过大造成的热损伤。在最优参数下，该结构的SEB阈值电压（VSEB）比传统结构高259%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.