Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: Analysis and hard-SOA

Abstract

In this study, we investigate the non-linear (NL) behavior of AlN/GaN HEMT technologies under gain compression when submitted to 10 GHz single-tone RF-step stress, which is crucial for millimetre-wave power application robustness. We evaluate AlN/GaN transistors, targeting high-power amplifiers with operating frequency above 30 GHz. We present here an original method that includes, in a unique NL expression, the varying self-biasing effect caused by RF step-stress sequences. This methodology can be used as a tool for comparative analysis of technological variants and various transistor geometries post RF stress. The step-stresses are conducted on HEMT in saturated mode and in diode operation alone, to assess the electrical origins of defects and the critical Safe Operating Area (SOA) of these devices. We identify the mechanism of failure as stemming from the degradation of the Schottky gate when subjected to critical RF power levels, due to its constrained capacity to handle power signals exceeding 18 dBm. Furthermore, we highlight the remarkable RF robustness of this technology, achieving gain compression of around 10 dB without degradation.