Microelectronics Reliability最新文献

{"title":"Investigation of thermal efficiency of recessed Γ gate over Γ gate, T gate and rectangular gate AlGaN/GaN HEMT on BGO substrate","authors":"Preethi Elizabeth Iype ,&nbsp;V. Suresh Babu ,&nbsp;Geenu Paul","doi":"10.1016/j.microrel.2024.115522","DOIUrl":"10.1016/j.microrel.2024.115522","url":null,"abstract":"<div><div>High electron mobility transistors (HEMTs) based on a wider bandgap AlGaN channel prove more efficient for high-voltage operation. The significant advantages of AlGaN channel HEMTs include a high critical electric field and higher saturation velocity. These characteristics contribute substantially to expanding the operating regime of power electronics, making them more suitable for applications requiring high voltage. This research work introduces a novel structure for a HEMT based on AlGaN/GaN with a recessed Gamma (Γ)-gate. The proposed HEMTs are composed of a 30 nm supply/barrier layer and an 18 nm channel layer, constructed on a Beta Gallium Oxide (BGO) substrate. Additionally, a delta-doped layer is incorporated to enhance device characteristics. The Direct Current (DC) features of the introduced scheme are compared with those of Γ-gate, rectangular and T-gate configurations, and analyzed using Silvaco TCAD software under various considerations. Key parameters including threshold voltage and transconductance are extracted from the DC characteristics. The proposed device provides a comparable cut-off frequency of 998 GHz for 20 nm gate length. Finally, the thermal efficiency of the introduced scheme, utilizing lateral lattice thermal conductivity, results in peak temperatures of 398.2 K, demonstrating superior performance compared to existing gate structures. The optimized performance of the device is assessed against existing devices, demonstrating its superiority among the compared schemes.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115522"},"PeriodicalIF":1.6,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of different vibration directions on the solder layer fatigue in IGBT modules","authors":"Yifan Jian,&nbsp;Shinian Peng,&nbsp;Zhi Chen,&nbsp;Zhengxi He,&nbsp;Liang He,&nbsp;Xinzhi Lv","doi":"10.1016/j.microrel.2024.115526","DOIUrl":"10.1016/j.microrel.2024.115526","url":null,"abstract":"<div><div>Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is &lt;5 %.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115526"},"PeriodicalIF":1.6,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A SEGR hardened trench gate DMOS with stepped source and optimized LOCOS structure","authors":"Yanfei Zhang ,&nbsp;Xueqin Gong ,&nbsp;Mengxin Liu ,&nbsp;Xiaoxia Wen ,&nbsp;Xiaowu Cai","doi":"10.1016/j.microrel.2024.115525","DOIUrl":"10.1016/j.microrel.2024.115525","url":null,"abstract":"<div><div>When irradiation experiment with heavy ions is carried out, Single-Event Gate Rupture (SEGR) is found for the conventional trench-gate DMOS (TG-DMOS) with LOCOS (Local Oxidation of Silicon). FIB analysis show that the failure spot is at the corner of the trench, which is the weakest point of the trench. In this paper, a SEGR hardened TG-DMOS with stepped source and optimized LOCOS structure is proposed. Stepped source is adopted to obtain a narrow base region and less voltage drop when the minority holes travel through the base region, which alleviates the electric field in the trench corner. Optimized LOCOS structure includes local oxidation area not only at the bottom of the gate trench but also at partial sidewall of the trench near the corner, protecting the trench corner and have no effect on the electrical characteristic. For the proposed structure, simulation shows that the peak electric field in the gate oxide is 3.8 MV/cm, which is almost half of the conventional TG-DMOS, and SEGR performance could be improved effectively.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115525"},"PeriodicalIF":1.6,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of the characteristics and growth of tin whiskers in orbit","authors":"Shinichiro Ichimaru ,&nbsp;Tsuyoshi Nakagawa ,&nbsp;Norio Nemoto ,&nbsp;Katsuaki Suganuma ,&nbsp;Hiroaki Tatsumi ,&nbsp;Hiroshi Nishikawa","doi":"10.1016/j.microrel.2024.115523","DOIUrl":"10.1016/j.microrel.2024.115523","url":null,"abstract":"<div><div>To confirm the applicability of tin-based lead-free parts in satellites, we validated the growth characteristics of tin whiskers in orbit. The result was that the tin whiskers generated on the in-orbit samples grew thin, long, and straight. The longest tin whisker observed in the in-orbit samples was approximately 767 μm. There were fine striation rings on the side face of the tin whisker in the in-orbit samples. This characteristic is the tin whiskers generated by thermal cycling. In addition, the growth characteristics of tin whiskers in orbit and on the ground in air differed. However, tin whiskers in orbit and on the ground in a vacuum exhibited the same growth characteristics. These results indicate that thermal cycling and vacuum (i.e., no oxygen) significantly influence the growth and shape of tin whiskers in orbit. Cross-sectional scanning electron microscope showed that on the in-orbit samples, the tin plating grains were neatly arranged, and no deep grooves along the tin plating grain boundaries were identified; whereas, on the ground in air, the tin plating grain boundaries were cracked, and the interfaces with adjacent grains were separated. Therefore, tin atoms diffused more easily in orbit because of the fine alignment of the tin plating grains; many very long tin whiskers were generated in orbit.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115523"},"PeriodicalIF":1.6,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel methodology for vibration induced fatigue life assessment of BGA devices in avionics systems of satellite launch vehicles","authors":"Janmejay Jaiswal,&nbsp;Vijay Kumar Sen,&nbsp;Amarnath Nandi","doi":"10.1016/j.microrel.2024.115524","DOIUrl":"10.1016/j.microrel.2024.115524","url":null,"abstract":"<div><div>A new PCB strain-based methodology for BGA fatigue damage assessment, during system level vibration analysis, is established. The Stress-Life curve for solder joints (Sn37Pb), extracted by FE modelling from peer-reviewed data, is utilized as the damage thresholds instead of traditionally used empirical criteria. To eliminate the modelling effort and resource intensive computations associated with solder joint stress calculations, a correlation between the PCB strain and device solder joint stress is established. Harmonic vibration analysis of PCBs with 3 different sizes, 2 boundary conditions, and different device locations are utilized for this purpose. A novel device and PCB model simplification technique, which does not affect PCB strain results, is also proposed. The methodology is demonstrated for fatigue life assessment of BGA device in a launch vehicle avionics package, under random vibration environment. Subsequently, design improvement to meet the fatigue life requirement is also suggested. Fatigue life is calculated using three different stress cycles estimation models namely Dirlik, Single Moment, and Steinberg's 3-band method, and Single Moment method is found to be most appropriate.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115524"},"PeriodicalIF":1.6,"publicationDate":"2024-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aging resilient ring oscillators for reliable Physically Unclonable Functions (PUFs)","authors":"M. Omaña ,&nbsp;M. Grossi ,&nbsp;D. Rossi ,&nbsp;C. Metra","doi":"10.1016/j.microrel.2024.115520","DOIUrl":"10.1016/j.microrel.2024.115520","url":null,"abstract":"<div><div>Physically Unclonable Functions (PUFs) are a promising low-cost solution for authentication and key generation in cryptosystems. However, it has been shown in the literature that, due to aging mechanisms such as Bias Temperature Instability (BTI), PUFs may no longer be able to generate correct outputs after a certain lifetime, thus becoming unreliable. In order to mitigate this problem, we present a novel ring oscillator (RO) based PUF design that is highly robust against BTI degradation. It will be hereinafter referred to as Highly BTI Resilient RO – HBTIRRO. In particular, we present two possible implementations for our HBTIRRO, each one corresponding to a different tradeoff among robustness against BTI, power consumption and area occupation. We compare the effectiveness and costs of the two proposed HBTIRRO implementations to those of a standard RO, and of the most recent alternative solution presented in the literature. We show that, one of our HBTIRRO implementation features the highest robustness against BTI, enabling a reduction in frequency degradation of 57.2 % and 34.6 % with respect to the standard RO and the recent alternate solution, respectively, while requiring a similar area and some increase in power consumption. The other implementation of our HBTIRRO features a very low cost in terms of area occupation, while featuring a robustness against BTI that is comparable to the most recent alternative solution presented in the literature. Moreover, we show that, compared to both the considered alternative solutions, our two HBTIRRO implementations present similar or higher (i.e., better) values in the three classical PUF figures of merit (namely, uniqueness, reliability and randomness), and the highest standard deviation in the statistical distribution of the oscillation frequency resulting from process variation. Therefore, our two proposed HBTIRRO offer also a more secure implementation for RO-based PUF than the compared solutions.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115520"},"PeriodicalIF":1.6,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Soft error analysis on junctionless ringFET structures and junctionless ringFET-based inverter circuits using numerical device modeling","authors":"Ramya M.,&nbsp;Nagarajan K.K.","doi":"10.1016/j.microrel.2024.115521","DOIUrl":"10.1016/j.microrel.2024.115521","url":null,"abstract":"<div><div>The performance of junctionless ringFETs under heavy ion irradiation is investigated utilizing 3D TCAD simulations. The vulnerable location of the ringFET device is identified by conducting a single-event transient analysis on the interaction of an ionizing particle, particularly a heavy ion, with various LET values. The analysis focused on both the inner and outer drain configurations. The drain region is the most vulnerable location in an inner drain configuration, whereas the channel near the drain region is the most vulnerable location in an outer drain configuration of a junctionless ringFET. The source region of a junctionless ringFET is the least vulnerable location in both the inner and outer drain configurations. An Inverter circuit built using junctionless ringFETs utilizing inner and outer drain configurations is also subjected to single-event transient analysis. The junctionless ringFET with an inner drain configuration is better for use in areas where radiation is a concern since its collected charge is lower than that of the outer drain configuration.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115521"},"PeriodicalIF":1.6,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-destructive fault diagnosis of electronic interconnects by learning signal patterns of reflection coefficient in the frequency domain","authors":"Tae Yeob Kang ,&nbsp;Haebom Lee ,&nbsp;Sungho Suh","doi":"10.1016/j.microrel.2024.115518","DOIUrl":"10.1016/j.microrel.2024.115518","url":null,"abstract":"<div><div>Fault detection and diagnosis of the interconnects are crucial for prognostics and health management (PHM) of electronics. Traditional methods, which rely on electronic signals as prognostic factors, often struggle to accurately identify the root causes of defects without resorting to destructive testing. Furthermore, these methods are vulnerable to noise interference, which can result in false alarms. To address these limitations, in this paper, we propose a novel, non-destructive approach for early fault detection and accurate diagnosis of interconnect defects, with improved noise resilience. Our approach uniquely utilizes the signal patterns of the reflection coefficient across a range of frequencies, enabling both root cause identification and severity assessment. This approach departs from conventional time-series analysis and effectively transforms the signal data into a format suitable for advanced learning algorithms. Additionally, we introduce a novel severity rating ensemble learning (SREL) approach, which enhances diagnostic accuracy and robustness in noisy environments. Experimental results demonstrate that the proposed method is effective for fault detection and diagnosis and has the potential to extend to real-world industrial applications.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115518"},"PeriodicalIF":1.6,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles study of Ni additions on mechanical properties of η'-Cu6Sn5-based intermetallic compound","authors":"Jinye Yao ,&nbsp;Shihao Guo ,&nbsp;Li Wang ,&nbsp;Min Shang ,&nbsp;Xiangxu Chen ,&nbsp;Haoran Ma ,&nbsp;Yunpeng Wang ,&nbsp;Haitao Ma","doi":"10.1016/j.microrel.2024.115514","DOIUrl":"10.1016/j.microrel.2024.115514","url":null,"abstract":"<div><div>Amorphous Ni<img>P layers have been employed as barrier layers to regulate the formation and growth of intermetallic compounds (IMCs) within industrial contexts. The doping of Ni atoms into the crystal structure of η'-Cu₆Sn₅ resulted in the formation of the IMC of η'- (Cu,Ni)₆Sn₅. An examination of the mechanical properties of IMCs is crucial for the evaluation of solder joint longevity. Based on first-principles calculations and VRH methods, the bulk modulus, shear modulus and the elastic modulus and hardness values of η'-Cu₆Sn₅, η'-Cu_5.75Ni_0.25Sn₅, η'-Cu_5.5Ni_0.5Sn₅ and η'-Cu_5.25Ni_0.75Sn₅ IMCs were analyzed, which showed that η'- (Cu,Ni)₆Sn₅ possessed a stronger anisotropy and hardness. The <em>K</em>_<em>IC</em> of all η'-Cu₆Sn₅-based IMCs are 1.830, 1.933, 1.961, and 1.960, respectively, indicating that the doping of Ni atoms into the η'-Cu₆Sn₅ cells can favourably affect their mechanical properties reducing the likelihood of microcracking at the interface during use and increasing the shear resistance of the joint. The thermodynamic disorder parameter (TDOS) for all η'-Cu₆Sn₅-based IMCs is primarily influenced by the Sn-s and Cu-d states, which exhibit metallic properties. It has been demonstrated that the compound η'- (Cu,Ni)₆Sn₅ is more stable than the compound η'-Cu₆Sn₅. This phenomenon can be attributed to the formation of robust covalent bonds between the Ni atoms and their neighbouring Cu and Sn atoms, which occurs when Ni atoms are doped. The findings of this research can serve as a valuable reference point and theoretical foundation for future applications of Ni<img>P barrier layers in soldering.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115514"},"PeriodicalIF":1.6,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142421875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel multi-information fusion CNN for defect detection in laser soldering of SAC305","authors":"Wei Wang ,&nbsp;Hongyun Zhao ,&nbsp;Biao Yang ,&nbsp;Fuyun Liu ,&nbsp;Lianfeng Wei ,&nbsp;Zengqiang Niu ,&nbsp;Guojie Lu ,&nbsp;Qiao Wang ,&nbsp;Xiaoguo Song ,&nbsp;Caiwang Tan","doi":"10.1016/j.microrel.2024.115519","DOIUrl":"10.1016/j.microrel.2024.115519","url":null,"abstract":"<div><div>Identification of laser soldering of lead-free solder Sn-3.0Ag-0.5Cu (SAC305) in electronic packaging was still an enormous challenge. It was difficult to detect defects in large-scale production. This work proposed an identification model based on multi-information fusion convolutional neural network (MIFCNN) for inspecting laser soldering process. In this method, the forty images in chronological order and the temperature data were combined as the input to be utilized in detecting defects. The results demonstrated that MIFCNN had best accuracy for three types of joints with accuracy of 98.28 % due to the combination of images and temperature information. The ICNN and TCNN had poor recognition accuracy for the warpage defect with 73.9 % and the poor wetting defect with 66.5 %, respectively. This was because the images and temperature information were the key to identifying the poor wetting defects and warpage defects, respectively. The poor wetting defect could be recognized by difference of contact angle, while the warpage defect could be significantly detected by maximum temperature. This work could help detecting defects of laser soldering in the actual production and widen the application of MIFCNN in the field of laser soldering.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115519"},"PeriodicalIF":1.6,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142422028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}