Microelectronics Reliability最新文献

{"title":"Reliability and failure analysis of AlGaN/GaN HEMT with NiPtAu and PtAu gate","authors":"M. Dammann ,&nbsp;P. Brückner ,&nbsp;R. Driad ,&nbsp;S. Krause ,&nbsp;S.A. Albahrani ,&nbsp;B. Weber ,&nbsp;M. Baeumler ,&nbsp;H. Konstanzer ,&nbsp;M. Mikulla ,&nbsp;M. Simon-Najasek ,&nbsp;S. Hübner ,&nbsp;A. Graff","doi":"10.1016/j.microrel.2025.115718","DOIUrl":"10.1016/j.microrel.2025.115718","url":null,"abstract":"<div><div>By comparing the reliability of 150 nm AlGaN/GaN HEMTs with PtAu gates to devices with NiPtAu SiN assisted gates, it was found that PtAu gates are more stable in terms of gate leakage current increase under HTRB step stress test and show smaller spread of the extrapolated lifetime values during long-term DC stress tests. An activation energy of 1.39 eV (1.97 eV) and a lifetime of around 10⁷ h at T_ch = 175 °C and V_d = 30 V has been extrapolated for devices with PtAu (NiPtAu) SiN assisted gate. By TEM cross sectioning and EDX mapping analysis of aged devices, the degradation of NiPtAu gate devices was attributed to a stress-induced local oxidation of the SiN passivation on the drain side of the gate foot. An activation energy of 1.15 eV and a lifetime of 5 · 10⁴ h at T_ch = 175 °C and V_d = 15 V has been extrapolated for devices with 100 nm T-gate reference technology. The faster degradation of the T-gate is possibly caused by a higher lateral electric field at the gate foot. T-gate reference technology lifetime is increased by more than an order of magnitude by reducing the drain voltage to 10 V.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115718"},"PeriodicalIF":1.6,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An integrated physical model and extant data based approach for fault diagnosis and failure prognosis: Application to a photovoltaic module","authors":"Nassima Mebarki ,&nbsp;Leïla-Hayet Mouss ,&nbsp;Toufik Bentrcia ,&nbsp;Samir Benmoussa","doi":"10.1016/j.microrel.2025.115711","DOIUrl":"10.1016/j.microrel.2025.115711","url":null,"abstract":"<div><div>Nowadays, the increasing tendency towards the exploitation of solar energy has yielded many technological advancements. Hybrid approaches are attracting attention worldwide to ensure the comprehensive assessment of photovoltaic modules reliability becoming a crucial issue. The present study is dedicated to the investigation of an innovative approach integrating Bond graph theory, Gaussian mixture models and Similarity-based method for fault detection and remaining useful life prediction. In this context, Bond graphs are exploited first to create a dataset covering diverse operational modes of the system. The identification and evaluation of critical sensors for fault observability is also considered, where the dataset is optimized based on the variance analysis. The Gaussian mixture model with its semi-supervised initialization is then utilized for clustering and fault diagnosis, while remaining useful life estimation is performed using a pairwise similarity technique. Validation results on a photovoltaic panel model demonstrate that the Gaussian mixture model consistently outperforms the classical k-Nearest Neighbors model across all key metrics (accuracy of 0.9396 vs. 0.7577, precision of 0.9192 vs. 0.5570, recall of 0.7849 vs. 0.5628, and F1-score of 0.8666 vs. 0.6707), highlighting its superior performance. The remaining useful lifetime model also achieves high accuracy, with Root Mean Square Error values ranging from 0.0282 to 0.0300, indicating minimal prediction error. Additionally, the R-Squared value of ~0.92 shows that the model explains approximately 92% of the variance in remaining useful lifetime predictions, underscoring its strong predictive capability. The results demonstrate the practical effectiveness of the proposed framework for both single and multiple faults. However, some limitations are noted, such as the exclusion of the transition phase in training data and the reliance on controlled conditions. The outcomes of this work are expected to provide valuable insights into the implementation of efficient hybrid frameworks, contributing to the sustainable development of solar energy.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115711"},"PeriodicalIF":1.6,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The behaviour of 350 V GaN HEMTs during heavy ion irradiations","authors":"F. Velardi ,&nbsp;G. Canale Parola ,&nbsp;S. Palazzo ,&nbsp;E. Martano ,&nbsp;A. Sanseverino ,&nbsp;L. Silvestrin ,&nbsp;C. Abbate ,&nbsp;G. Busatto","doi":"10.1016/j.microrel.2025.115723","DOIUrl":"10.1016/j.microrel.2025.115723","url":null,"abstract":"<div><div>The behaviour of a 350 V Enhancement Mode GaN power HEMT during heavy ion irradiation is presented. A new experimental setup has been developed to increase the sensitivity of the measurement. It allowed the measurement of the charge collected at the terminals following the impact with energetic particles to be extended by almost an order of magnitude. The results obtained, interpreted with the help of two-dimensional finite element simulations, demonstrate that the tested devices exhibit very different behaviour from those previously characterized. They do not show significant charge amplification and are not subjected to single-event gate rupture. Furthermore, it is demonstrated that the device failure is due to a recursive mechanism like that which develops in silicon PiN diodes when exposed to heavy ion irradiation.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115723"},"PeriodicalIF":1.6,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate","authors":"S.L. Longato ,&nbsp;D. Favero ,&nbsp;A. Stockman ,&nbsp;A. Nardo ,&nbsp;P. Vanmeerbeek ,&nbsp;M. Tack ,&nbsp;G. Meneghesso ,&nbsp;E. Zanoni ,&nbsp;C. De Santi ,&nbsp;M. Meneghini","doi":"10.1016/j.microrel.2025.115714","DOIUrl":"10.1016/j.microrel.2025.115714","url":null,"abstract":"<div><div>We present an extensive analysis of the impact of drain-source off-state leakage current on the dynamic on-resistance of GaN HEMTs with p-GaN gate. We analyzed two wafers with epitaxial layers grown under different conditions. The difference in the epitaxial layers gives an impact on the off-state leakage. We analyzed all the leakage components demonstrating that the wafer with lower off-state leakage shows a large dynamic R_on instability. Based on current transient measurements performed in temperature, this difference is explained by considering that a larger leakage (still below the nA) through the unintentionally-doped channel layer can ease the generation of positive charge at the bottom of the buffer, with consequent compensation of the dynamic R_on effect. The methodology presented in this paper constitutes a rapid and effective approach to evaluate the conductivity of the GaN channel layer, and its contribution to device stability.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115714"},"PeriodicalIF":1.6,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Risk of CuxO phase penetration between the Ag plating layer and Cu during high-temperature reliability testing of interfaces bonded to cold sintered Ag nano-porous sheets on direct Ag-plated Cu substrates","authors":"YehRi Kim ,&nbsp;Eunjin Jo ,&nbsp;Byeong Kwon Ju ,&nbsp;Yoongul Lee ,&nbsp;Jaeup Kim ,&nbsp;Kijoon Ahn ,&nbsp;Seungjun Noh ,&nbsp;Dongjin Kim","doi":"10.1016/j.microrel.2025.115719","DOIUrl":"10.1016/j.microrel.2025.115719","url":null,"abstract":"<div><div>This study was carried out to understand the high-temperature stability of Ag nano-porous sheet bonded joints during thermal aging. The joints have been designed to be between two Ag metallization layers directly plated on copper layers of the die and substrate. The Cu_xO penetration between Ag plated layer and Cu substrate formed during thermal aging at 250 °C from 125 h, during which Cu_xO layer continuously grew up to 1000 h. The growing Cu_xO phase penetrated between the Ag plating and Cu, leading to voids that developed into a delamination layer over time. The delamination and continuous voids formed between Cu_xO layer and Cu had a critical effect on reducing the bonding strength. In this study, we thoroughly investigated the issues that may arise during thermal reliability testing at 250 °C when bonding commercial Ag nano-porous sheets directly Ag-plated onto Cu, from the perspective of microstructural development.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115719"},"PeriodicalIF":1.6,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on the degradation of contact resistance of wire-spring contacts in different wear condition","authors":"Le Xu ,&nbsp;Yuyao Zhao ,&nbsp;Shujuan Wang ,&nbsp;Ji Jiang","doi":"10.1016/j.microrel.2025.115721","DOIUrl":"10.1016/j.microrel.2025.115721","url":null,"abstract":"<div><div>Electrical connectors are important components in electrical systems, responsible for the transmission and control of electrical signals. In the process of use, frictional wear occurs between the pins and sockets of the contactor in an electrical connector. This phenomenon results in an increase in contact resistance, which can further lead to system failures, so it is critical to ensure the stability of the performance of the contactor. In this paper, a commonly used specification of wire-spring contacts is investigated. Firstly, the mechanical properties of the component were analyzed. Subsequently, the contact component underwent vibration testing under various conditions at room temperature to identify the wear patterns associated with different vibration scenarios. Finally, using the experimental data, a physical model of frictional wear failure was developed for the contact component, enabling the determination of contact failure time as a function of vibration amplitude and frequency.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115721"},"PeriodicalIF":1.6,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of the impact of body bias on the threshold voltage drift of planar SiO2 transistors","authors":"Michael Waltl ,&nbsp;Konstantinos Tselios ,&nbsp;Theresia Knobloch ,&nbsp;Dominic Waldhoer ,&nbsp;Hubert Enichlmair ,&nbsp;Eleftherios G. Ioannidis ,&nbsp;Rainer Minixhofer ,&nbsp;Tibor Grasser","doi":"10.1016/j.microrel.2025.115693","DOIUrl":"10.1016/j.microrel.2025.115693","url":null,"abstract":"<div><div>The performance of semiconductor transistors is significantly influenced by charge trapping at oxide and interface defects. The impact of charge-trapping events of defects on the characteristics of the transistor is strongly dependent on factors such as the geometry and the operating point at which the transistor is used. Understanding the complex relationships between the influence of defects and the robustness of devices is essential to optimize circuit performance and becomes particularly important in analog designs. In this work, we investigate the influence of gate oxide defects on the reliability of nanoscale MOS transistors under varying body bias conditions. Using measure-stress-measure techniques, we observe notable effects on both time-zero and time-dependent variability with the application of body bias. Furthermore, the amplitudes of the step heights are investigated as they provide an important measure in scaled technologies to estimate the impact of traps on the device behavior. The results indicate that a body bias can be strategically employed to enhance device reliability by fine-tuning the body bias conditions.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115693"},"PeriodicalIF":1.6,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143735211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of the long-term dynamic RDS(on) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress conditions","authors":"Fawad Rauf ,&nbsp;Muhammad Farhan Tayyab ,&nbsp;Samir Mouhoubi ,&nbsp;Marcelo Lobo Heldwein ,&nbsp;Gilberto Curatola","doi":"10.1016/j.microrel.2025.115708","DOIUrl":"10.1016/j.microrel.2025.115708","url":null,"abstract":"<div><div>The Dynamic High Temperature Operating Life (DHTOL) test, outlined in JEDEC standard JEP180.01, validates the long-term switching reliability of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for power management applications. Despite the standardized testing framework, variability in switching test conditions across manufacturers necessitates a thorough investigation of GaN HEMT's long-term switching reliability within specific applications. This study adopts a holistic approach encompassing technological considerations and application demands to assess the long-term switching reliability of p-GaN HEMTs. The analysis emphasizes monitoring the degradation of the dynamic on-state resistance (<em>dR</em>_DS(on)). A structured methodology is employed to precisely model and validate current and voltage peaks via parasitic extraction, defining switching stress conditions. Junction temperature is estimated through FEM simulation of the package model, followed by long-term testing to evaluate degradation. In addition to the hard-switching stress tests with variable voltages, peak current, slew rates, and duty cycles, stress tests with switching loss-free conditions at different temperatures are also performed to assess the primary degradation mechanism. The comparison of long-term hard-switching stress tests and tests conducted under switching loss-free conditions highlights the hot electron effect as the primary contributor to long-term degradation during the hard-switching operation. The substantial influence of voltage and current overlap on degradation is validated by testing Schottky gate p-GaN HEMT with different slew rates. Furthermore, ohmic gate p-GaN HEMT is found to be relatively robust compared to Schottky gate-p-GaN HEMT under similar long-term hard-switching stress conditions.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115708"},"PeriodicalIF":1.6,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143735212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Response of the bipolar voltage regulator under neutron irradiation and consecutive pulsed gamma irradiation","authors":"Ruibin Li,&nbsp;Junlin Li,&nbsp;Chenhui Wang,&nbsp;Wei Chen,&nbsp;Weijian Liu,&nbsp;Shilin Yu,&nbsp;Xiaoyan Bai,&nbsp;Xiaoqiang Guo,&nbsp;Chao Qi,&nbsp;Yan Liu,&nbsp;Xiaoming Jin","doi":"10.1016/j.microrel.2025.115709","DOIUrl":"10.1016/j.microrel.2025.115709","url":null,"abstract":"<div><div>Two types of radiation experiments were carried out on a bipolar three-terminal fixed voltage regulator μA78m33. The device was first irradiated by neutron, and then by pulsed gamma irradiation, for the purpose of finding out the impact of neutron displacement damage on the pulsed gamma radiation response of the device. The results show that, as irradiated by neutrons in power-up state, the device with larger load current can withstand higher neutron fluence, which indicates that the carrier concentration in the device can alleviate the displacement damage to some extent; when the device is irradiated by pulsed gamma, the output voltage produces a significant interruption and the duration of the interruption is shortened with the increase of the neutron fluence. It is shown that the displacement defects caused by neutrons reduce the transient interruption duration of the regulator, mainly because the recombination centers formed by the displacement defects significantly reduce the minority carrier lifetime, thus reducing the duration of the photocurrent generated by pulsed gamma irradiation, but has little relation with the variation of the current gain of the transistor induced by neutron irradiation.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115709"},"PeriodicalIF":1.6,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Failure modes competition and long-term reliability in the isothermal aging of sintered Cu joints","authors":"Jianbo Xin ,&nbsp;Xiaochun Lv ,&nbsp;Yue Gao ,&nbsp;Le Yang ,&nbsp;Sushi Liu ,&nbsp;Ke Li ,&nbsp;Minghao Zhou ,&nbsp;William Cai ,&nbsp;Jing Zhang ,&nbsp;Yang Liu","doi":"10.1016/j.microrel.2025.115717","DOIUrl":"10.1016/j.microrel.2025.115717","url":null,"abstract":"<div><div>Sintered Cu joints may experience diminished reliability due to oxidation during the operation of wide-bandgap (WBG) semiconductor devices. This study utilized the aging process of Cu sintered joints in a vacuum environment as a reference to investigate the microstructural evolution and mechanical property changes of Cu sintered joints under varying aging temperatures in air. Based on the fracture morphology, the failure modes of the joints were categorized into three primary types: (1) ductile fracture within the sintered layer, (2) brittle fracture within the sintered layer, and (3) brittle fracture at the interface. These variations are primarily attributed to increased oxidation during the aging process, which leads to a continuous increase in joint strength and a transition between distinct fracture modes characterized by competing failure mechanisms. Additionally, Kirkendall voids were observed in all joints aged at varying temperatures, and mixed ductile-brittle fracture morphology was evident on the fracture surfaces, indicating that Cu sintered joints undergo a similar aging process across different temperatures.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115717"},"PeriodicalIF":1.6,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143725172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}