Microelectronics Reliability最新文献

{"title":"Disentangling bulk and interfacial factors in solder joint reliability of fine pitch packages","authors":"You-Cheol Jang","doi":"10.1016/j.microrel.2025.115791","DOIUrl":"10.1016/j.microrel.2025.115791","url":null,"abstract":"<div><div>This study evaluates the effects of solder alloy composition and pad surface finish on the mechanical strength and thermal aging behavior of solder joints in fine pitch BGA packages. Three lead-free solder alloys—Sn–1.2Ag–0.5Cu–0.05Ni (SAC1205N), Sn–1.0Ag–0.5Cu (SAC105), and Sn–3.0Ag–0.5Cu (SAC305)—were combined with three surface finishes (CuOSP, ENEPIG, and NiAu) to fabricate nine joint configurations. Mechanical integrity was assessed using ball shear testing (BST) and ball pull testing (BPT) both before and after isothermal aging at 150 °C (0–192 h). BST results indicated that solder composition—particularly Ag content—was the dominant factor in bulk joint strength, with SAC305 consistently demonstrating the highest shear resistance due to its Ag₃Sn-reinforced microstructure. In contrast, BPT results emphasized the critical role of pad finish, with NiAu delivering superior interfacial strength through the formation of uniform Ni₃Sn₄ intermetallic layers. Statistical correlation analysis reinforced these trends, revealing a strong correlation between solder alloy and BST (<em>r</em> = 0.781, <em>p</em> = 0.013), and between pad finish and BPT (<em>r</em> = 0.695, <em>p</em> &lt; 0.0001). Thermal aging accelerated strength degradation across all configurations; however, Ni-doped and high-Ag solders showed improved resistance to intermetallic coarsening. Fracture mode analysis and cross-sectional imaging further demonstrated that cohesive bulk failure in SAC305–NiAu joints correlated with stable interfacial morphology, while interfacial separation was more prevalent in CuOSP-based joints due to brittle IMCs and void formation. These insights highlight the stress-mode-dependent nature of solder joint degradation.</div><div>These results elucidate the differentiated contributions of bulk solder alloy and interfacial pad finish to joint performance under distinct mechanical loading conditions. In particular, the SAC305–NiAu and SAC1205N–CuOSP combinations demonstrated superior reliability, rendering them promising candidates for fine-pitch interconnects in high-performance applications. Overall, this study provides material-level design guidance for optimizing solder–pad combinations tailored to shear- or tensile-dominant loading in fine-pitch, high-performance electronic packaging.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115791"},"PeriodicalIF":1.6,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144166443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of constant and pulsed active balancing current patterns on the aging of lithium-ion batteries","authors":"M.A. Hussain,&nbsp;A. Soldati,&nbsp;G. Sozzi","doi":"10.1016/j.microrel.2025.115814","DOIUrl":"10.1016/j.microrel.2025.115814","url":null,"abstract":"<div><div>Lithium-ion batteries (LIB) have been widely used in electric vehicles for the past decade because of their advantageous properties, such as low self-discharge, high power and energy density, long life, wide operating temperature range, and lack of memory effect. However, the available energy and power deteriorate because of inconsistent operations caused by various external factors. For stable operation, it is crucial to focus on the accurate assessment of the state of health (SOH) of LIB, which is a challenging task. This article presents an investigation of the effect of different current patterns (constant- and pulsed-current discharge) on battery performance. Constant current (CC) and pulsed current (PC) cycles were used to represent possible current battery patterns to be used during active cell balancing. This analysis was conducted using a simple and cost-effective method that aims to measure the battery capacity directly by integrating current over time. The findings indicate higher capacity retention and lower thermal stress when the LIB is cycled under PC discharge than under CC discharge. To thoroughly explore the effects of both current patterns, a comparative analysis of the capacity fade and change in internal resistance is considered. Compared with CC discharge, the capacity fade and power loss due to increase in resistance were relatively improved by 2 % and 8.7 %, respectively, under PC discharge. These results show that PC is preferable in active balancing solutions to preserve the LIB lifetime and performance.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115814"},"PeriodicalIF":1.6,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144147206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of load sequence interaction for low ∆Tj's on the reliability of bonded aluminum wires in IGBTs","authors":"A. Halouani,&nbsp;Z. Khatir,&nbsp;R. Lallemand,&nbsp;A. Ibrahim,&nbsp;D. Ingrosso","doi":"10.1016/j.microrel.2025.115793","DOIUrl":"10.1016/j.microrel.2025.115793","url":null,"abstract":"<div><div>This paper focuses on the effects of load sequence on the reliability of insulated gate bipolar transistors (IGBTs). Precisely, the effect of junction temperature swing (<span><math><mo>∆</mo><msub><mi>T</mi><mi>j</mi></msub></math></span>) is investigated in low ranges. A series of power cycling tests have been done; first, two tests with a single <span><math><mo>∆</mo><msub><mi>T</mi><mi>j</mi></msub><mspace></mspace></math></span> conditions are performed in order to serve as test reference. Then, combined power cycling tests with two-level of <span><math><mo>∆</mo><msub><mi>T</mi><mi>j</mi></msub></math></span> are conducted sequentially. The crack propagation for both combined tests specimens is analysed. Results show that a sequencing in <span><math><mo>∆</mo><msub><mi>T</mi><mi>j</mi></msub><mspace></mspace></math></span> of the high-low stress level leads to crack retardation and then a crack acceleration after a number of cycles. In addition, the crack propagation of the low-high stress level follows the same evolution of the high stress crack propagation. These results were correlated to the microstructure parameters using Electron Backscatter Diffraction (EBSD) technique with a focus on the effect of residual stress. Local misorientation, grain size and grain boundaries evolution at the sites of crack propagation confirmed the phenomenon observed for the crack propagation for both combined tests.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115793"},"PeriodicalIF":1.6,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144166441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effective number of accelerated thermal cycles (ATCs) for accurate prediction of damage and fatigue life of solder joints in IGBT power module","authors":"Sunday E. Nebo,&nbsp;Emeka H. Amalu,&nbsp;David J. Hughes","doi":"10.1016/j.microrel.2025.115798","DOIUrl":"10.1016/j.microrel.2025.115798","url":null,"abstract":"<div><div>Insulated gate bipolar transistor (IGBT) power module is vital to efficient functioning of several critical systems in electric vehicle (EV), photovoltaic (PV) module, and more/all electric aircrafts (MEA/AEA). As reliability qualification of IGBT immensely depends on system's modelling which employs thermal cycling, identification of effective number of accelerated thermal cycles (ATCs) is important to ensure accurate reliability prediction. This investigation advises on the effective number of ATCs for modelling damage and fatigue life of 96.5 % tin, 3 % silver, and 0.5 % copper (SAC305) solder joints in IGBT module. SolidWorks software is used to create four realistic 3-D finite element (FE) models of typical IGBT module. The IEC 60068-2-14 thermal cycle test and Anand's time independent visco-plastic constitutive model are implemented in static structural package in ANSYS mechanical software to simulate the response of the models to 6 ATCs, 12 ATCs, 18 ATCs and 24 ATCs. Thirty ATCs produced magnitudes of von-Mises stress, equivalent plastic strain and accumulated strain energy density which are almost invariant with application of greater number of ATC. Deployment of four fatigue life constitutive equations from Morrow, Coffin-Manson, and Syed generated polynomial model which produced minimum and consistent lives of the IGBT modules at about 30 ATCs. Based on this finding, 30 ATCs are proposed as the effective number. The generated models establish the relationship between the number of ATCs and fatigue life predicted for IGBT module. It is proposed to be used to evaluate the effect of number of ATCs employed and the resultant predicted fatigue life of IGBT module.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115798"},"PeriodicalIF":1.6,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144147205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development challenges of a one-sided GaN-based high-current density buck converter through multiphysics optimization for electric vehicle applications","authors":"M. Belguith ,&nbsp;S. Eloued ,&nbsp;M. Kadi ,&nbsp;J. Ben Hadj Slama","doi":"10.1016/j.microrel.2025.115792","DOIUrl":"10.1016/j.microrel.2025.115792","url":null,"abstract":"<div><div>GaN's advantages over conventional semiconductors make it an excellent candidate for deployment in the transportation area. This work aims to develop a simple, one-sided DC/DC GaN-based buck converter for manufacturing and prove its feasibility through multiphysics optimization of the chosen topology. To enhance the design, the Ansys “Q3D tool” is employed to estimate parasitic elements, which are subsequently incorporated into an electrical model in the waveform viewer software “LTspice” to evaluate their impact on the switching node signal “Vsw” of the half bridge structure. Next, we will examine the overshoots and ringings by comparing the measured and simulated converter's Vsw and the output signals. We have implemented robust thermal management in this work. Additionally, this study provides an analysis of current density in the layout and heat distribution in the converter circuit. We will present more precise measurement results that align with the simulation in the primary outcomes, showcasing the effectiveness of the converter layout optimization topology.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on the relative independence of failure mechanisms for mitigating passing word line induced row hammering","authors":"Shanyong Chen,&nbsp;Hanqing Luo,&nbsp;Liping Liang","doi":"10.1016/j.microrel.2025.115813","DOIUrl":"10.1016/j.microrel.2025.115813","url":null,"abstract":"<div><div>In this article, we investigate the Row Hammering (RH) failure with different n-type doping profiles based on 3D TCAD simulation. We propose a simulation structure called de-electrode structure (DS). By comparing the storage node (SN) capacitance voltage variations in the normal structure and the DS, we obtain the trend of charge change induced by electron migration (EM) and capacitive crosstalk (CC) respectively. The simulation result reveals that the mechanisms responsible for RH failure exhibit distinct contributions across different failure modes. CC is the main mechanism of the one-failure induced by passing word line (PWL), while EM and CC synergistically contribute to the zero-failure induced by PWL. According to the charge calculation results, we find that as the bit line (BL) junction depth <em>D</em>_<em>BL</em> increases, EM is continuously enhanced, while CC is suppressed. Therefore, we adjust the physical environment of DRAM cell through the PWL work function (WF) improvement and fluorine (F) implantation. This adjustment makes CC the suppression of is greater than the enhancement of EM. This optimization scheme improves the limitation of <em>D</em>_<em>BL</em> increase for RH failure suppression, which has important significance for RH failure suppression research.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115813"},"PeriodicalIF":1.6,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aging modelling of Li-ion battery systems based on accelerated tests","authors":"A. Toscani,&nbsp;M. Stighezza,&nbsp;M. Simonazzi,&nbsp;N. Delmonte,&nbsp;P. Cova,&nbsp;V. Bianchi,&nbsp;I. De Munari","doi":"10.1016/j.microrel.2025.115795","DOIUrl":"10.1016/j.microrel.2025.115795","url":null,"abstract":"<div><div>This paper presents a new equivalent model based on the Arrhenius law in MATLAB/Simulink environment that can be exploited to evaluate the aging of Li-ion batteries. In this work, we show the simulation results obtained using this model. In addition, an automated test bench for multiple Li-ion battery cell characterization and accelerated aging will be presented together with early measurement results for validating the model.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115795"},"PeriodicalIF":1.6,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144123881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the fracture mechanism of multilayer ceramic capacitors via combined simulation and experiment","authors":"Sen Yang ,&nbsp;Qin Xu ,&nbsp;Fei Shen ,&nbsp;Liao-Liang Ke","doi":"10.1016/j.microrel.2025.115800","DOIUrl":"10.1016/j.microrel.2025.115800","url":null,"abstract":"<div><div>As a basic component, multilayer ceramic capacitors (MLCCs) have been widely used in many engineering fields. Failure caused by printed circuit board flex deserves special attention throughout the entire lifecycle of MLCCs. In this failure pattern, the failure probabilities vary across different types of MLCCs. The initial damage location and the direction of cracking propagation display distinct characteristics. This paper presents the MLCC equivalent model by using homogenization theory in finite element method (FEM), and simulates the flex failure of different types of MLCCs. Three-point bending experiments are conducted to validate the FEM results, revealing the underlying cause of flex cracking. The failure pattern inferred by FEM aligns well with the experiment result, with the maximum error of only 7.56 %, demonstrating the equivalent model's effectiveness. Furthermore, we conduct a sensitivity analysis of geometric parameters, including the length-width ratio, terminal electrode width, stacking height, and solder joint height. Our study reveals the underlying mechanism of MLCC flex failure and identifies the key design factors influencing MLCC reliability. These findings provide valuable insights into the design, application, and enhancement of MLCC reliability.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115800"},"PeriodicalIF":1.6,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144131282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dependence between drain current saturation level and short-circuit robustness of p-GaN HEMTs","authors":"M.L. Dedew ,&nbsp;S. Lefebvre ,&nbsp;T.A. Nguyen ,&nbsp;T.L. Le ,&nbsp;V. Rustichelli ,&nbsp;J. Oliveira ,&nbsp;M. Alam ,&nbsp;F. Coccetti","doi":"10.1016/j.microrel.2025.115794","DOIUrl":"10.1016/j.microrel.2025.115794","url":null,"abstract":"<div><div>This work presents an experimental investigation of drain current saturation (I_D−SAT) effect on short-circuit (SC) robustness of 650 V normally-off gallium nitride (GaN) high electron mobility transistors (HEMTs). SC tests were performed at a drain-source voltage (V_DS) of 400 V, varying parameters such as gate resistance (R_G), on-state gate-source voltage (V_GS), and parasitic source inductance (L_S) on the device under test (DUT). As expected, variation on maximum of I_D−SAT (I_{D−SAT−max}) was observed by varying these parameters. In single shot destructive SCs, components demonstrated a very high robustness, withstanding SC durations of hundreds of microseconds. However, in repetitive SCs of very short durations, components proved extremely fragile, failing after only a few SC cycles, sometimes as few as two cycles. Results suggest that in repetitive SCs, the failure appears to result from a critical dissipated energy (E_SC) being exceeded depending on several parameters. This critical E_SC value also seems to depend on SC pulse width (t_p). In one-shot destructive SCs, the cause of failure remains unclear, as no critical E_SC or I_{D−SAT−max} threshold was observed. However, it is important to note that, in destructive SCs, a correlation between I_{D−SAT−max} and SC withstanding time (SCWT) has been identified.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115794"},"PeriodicalIF":1.6,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical modeling of CV and I-V characteristics in p-GaN gate HEMTs based on the unified 2DEG density expression","authors":"Lili Zhang,&nbsp;Yanan Yin,&nbsp;Yiwu Qiu,&nbsp;Tao Wang,&nbsp;Pingwei Zhang,&nbsp;Xinjie Zhou","doi":"10.1016/j.microrel.2025.115789","DOIUrl":"10.1016/j.microrel.2025.115789","url":null,"abstract":"<div><div>This work proposes a physics-based analytical model for p-GaN gate high electron mobility transistors (HEMTs), developed through a self-consistent solution of the Schrödinger-Poisson equations. The model explicitly accounts for voltage distribution across the device, focusing on voltage drops across the metal/p-GaN Schottky junction and the AlGaN barrier layer. A comprehensive analysis is conducted to evaluate the impact of several factors on the electrical characteristics of p-GaN gate HEMTs. The investigated factors include the net polarization charge density at the AlGaN/GaN interface, out-diffused Mg acceptor density in the AlGaN barrier, and depletion charge density in the unintentionally doped GaN (UID-GaN) buffer layer. Furthermore, a unified expression for the two-dimensional electron gas (2DEG) charge density is derived, which is valid across all operation regions. On this basis, expressions for gate capacitance and drain current are developed. The model's credibility is validated by the agreement between modeled and measured <em>C</em><img><em>V</em> and <em>I</em>-<em>V</em> characteristics across three p-GaN gate HEMT samples.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115789"},"PeriodicalIF":1.6,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144106386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}