Microelectronics Reliability最新文献

{"title":"Research of SEB effects in trench IGBT based on the TCAD simulation","authors":"Yanfei Gong ,&nbsp;Xingtong Chen ,&nbsp;Zhensong Li ,&nbsp;Qiang Zhao ,&nbsp;Jieqing Fan ,&nbsp;Fang Zhang ,&nbsp;Zhiwei Dong","doi":"10.1016/j.microrel.2024.115517","DOIUrl":"10.1016/j.microrel.2024.115517","url":null,"abstract":"<div><div>In this paper, based on TCAD simulation, a detailed investigation of the SEB failure mechanism of trench IGBTs featuring a deep trench with slanted side-walls structure is conducted for the first time by studying the temporal evolution of electrostatic potential, impact ionization, electric field, current density, and hole concentration distributions. The study reveals that heavy ion irradiation can induce the turning-on of inherent parasitic transistors, leading to the formation of latch-up and consequently SEB. Firstly, the peak electric field transfer leads to high-level impact ionization at the homojunction, injecting ionized electrons into the base-neutral region to turn on the parasitic PNP transistor. Secondly, ionized holes flow through the P-well towards the emitter, diminishing the potential barrier between the P-well and the N+ source region, thus activating the parasitic NPN transistor. Finally, with the parasitic NPN transistor remaining forward-biased, it continuously supplies electron current to the parasitic PNP transistor, thereby sustaining its operation. In summary, the conclusions obtained from the study can provide important references for a deeper understanding of the failure mechanisms of trench IGBT devices in harsh radiation environments.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115517"},"PeriodicalIF":1.6,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142422027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of filer content on the thermal characteristics of underfill materials for Ball-Grid-Array component package","authors":"Jang Baeg Kim ,&nbsp;Kyung-Yeol Kim ,&nbsp;Eun Ha ,&nbsp;Taejoon Noh ,&nbsp;Seung-Boo Jung","doi":"10.1016/j.microrel.2024.115513","DOIUrl":"10.1016/j.microrel.2024.115513","url":null,"abstract":"<div><div>High-density integration and fast processing speed in the semiconductor industry have increased heat generation in electronic devices. Underfill materials, known for their high thermal conductivity and low coefficient of thermal expansion (CTE), offer a potential solution to dissipate heat and improve device reliability. In this study, we investigate the effect of filler content on the thermal reliability of underfill materials for ball grid array (BGA) component packaging. Mainly, we investigate the thermal conductivity, CTE, and mechanical properties of different filler contents of Al₂O₃ and Al₂O₃–BN hybrid underfills to facilitate heat dissipation and improve device reliability. The thermal conductivity of the underfill materials was evaluated by measuring the surface temperatures of underfill molded flip-chip light-emitting diodes (FCLEDs). The mechanical properties and thermo-mechanical reliability of the underfill materials were evaluated via a three-point bending test of the underfill packaged BGA components after the thermal shock test. The results showed that optimizing underfill properties based on specific application environments is crucial for obtaining enhanced thermal reliability and mechanical properties of underfill packaged BGA components.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115513"},"PeriodicalIF":1.6,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142422024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrosion and conductivity damage of AgNW transparent conductive thin films under a simulated sulfur-containing atmosphere and mechanical force","authors":"Shan Wan,&nbsp;Tingting Wen,&nbsp;Bokai Liao,&nbsp;Xingpeng Guo","doi":"10.1016/j.microrel.2024.115516","DOIUrl":"10.1016/j.microrel.2024.115516","url":null,"abstract":"<div><div>Silver nanowire (AgNW) transparent conductive thin films possess high flexibility, high conductivity, high light transmittance and etc., demonstrating significant advantages in flexible electronics applications. However, in the service occasions, the coupled effect of corrosion and mechanical force easily makes the electrical conductivity of AgNW films deteriorate or even fail, which seriously affects the service reliability of AgNW films. In this work, scanning vibrating electrode technique was firstly used to confirm the existence of electrochemical corrosion on AgNW films. Furthermore, electrochemical measurements (including OCP, PDP and EIS) were carried out for researching the electrochemical corrosion process on AgNW films under different environmental factors and mechanical forces. Their surface morphologies and electrical conductivity were characterized and evaluated by the Scanning Electron Microscopy and square resistance tester respectively. Experimental results indicate that the corrosion-mechanics interaction effect aggravates the damage process of electrical conductivity of AgNW films.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115516"},"PeriodicalIF":1.6,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142422025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation study on the effect of palladium layer thickness and temperature on the bonding properties of palladium coated copper wire","authors":"Bin An ,&nbsp;Hongliang Zhou ,&nbsp;Jun Cao ,&nbsp;Pingmei Ming ,&nbsp;Jie Xia ,&nbsp;Jingguang Yao ,&nbsp;John Persic","doi":"10.1016/j.microrel.2024.115515","DOIUrl":"10.1016/j.microrel.2024.115515","url":null,"abstract":"<div><div>Palladium coated copper (PCC) wire is an emerging bonding wire. There are relatively few studies on the effect of palladium plating thickness and temperature on its bonding performance. In order to investigate the effects of three parameters, namely palladium plating thickness, chip preheating temperature and the free air ball (FAB) initial temperature, on the bonding performance of PCC wires, this paper establishes a transient nonlinear finite element analysis model of thermal coupling between bare copper wires and PCC wires, and simplifies the whole bonding process into two stages of impact and ultrasonic vibration to carry out the experimental simulation. Firstly, the Taguchi orthogonal test method was adopted to obtain the ranking of the degree of influence of the three factors on the bonding results, and the optimum palladium plating thickness and FAB initial temperature of 100 nm and 100 °C were derived, respectively. Then the PCC wires with 100 nm palladium plating thickness were selected, and the bare copper wires were used as the reference, and multiple one-factor simulation experiments were carried out under the condition of changing the chip preheating temperature only. The simulation results show that the FAB and pad stress levels in the bonding results of the PCC wires are significantly higher than those of the bare copper wires, but the GaN layer stress is less than that of the bare copper wires. Moreover, there is an approximate parabolic relationship between the maximum stresses of pad and GaN layer and the preheating temperature of the chip. In the bonding results of bare copper wire, there is also an approximate parabolic relationship between the maximum stress of FAB and the chip preheating temperature. This parabolic relationship allows a prediction of the optimum chip preheating temperature. Selecting the appropriate palladium plating thickness and controlling the appropriate FAB temperature and chip preheating temperature can improve the bonding quality, and this numerical simulation work can provide a reference for the selection of palladium plating thickness and temperature parameter regulation of PCC wires.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115515"},"PeriodicalIF":1.6,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142422026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling LED driver lifespan through capacitor degradation due to thermal cycling","authors":"Sachintha De Vas Gunawardena,&nbsp;Nadarajah Narendran","doi":"10.1016/j.microrel.2024.115506","DOIUrl":"10.1016/j.microrel.2024.115506","url":null,"abstract":"<div><div>This paper proposes a life test method and a model to predict the time to failure of LED drivers with electrolytic capacitors at the output stage that experience cycled power/thermal conditions. Based on failure rate estimation methods and field studies, degradation of aluminum electrolytic capacitors can be considered a potential point of failure in LED drivers and other power electronic applications. It is essential to identify failure modes, causes, and precursors of failure of electrolytic capacitors to design reliable power electronic circuits and estimate the useful lifetime of the designed drivers for a given application. LED drivers are exposed to elevated temperatures, on-off switching, and cycled thermal conditions like other power electronic converters. Past studies have investigated the parametric degradation of electrolytic capacitors under constant thermal stresses but not under cycled thermal conditions commonly found in lighting applications. Therefore, temperature and thermal cycling were selected as acceleration factors to study the effects of power/thermal cycling on the life of electrolytic capacitors in LED drivers. The accelerated life test showed that the LED driver's useful life had an inverse exponential relationship to the operating temperature of the output capacitor. The thermally cycled conditions did not indicate additional failure mechanisms introduced due to thermal cycling within the tested temperature range. Based on the experimental results, we developed a mathematical modeling technique to estimate the time to failure of LED drivers due to the electrolytic capacitor's parametric degradation with different operating profiles.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115506"},"PeriodicalIF":1.6,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142327863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of microstructural variability on fatigue simulations of solder joints","authors":"M. Rebosolan ,&nbsp;M. van Soestbergen ,&nbsp;J.J.M. Zaal ,&nbsp;T. Hauck ,&nbsp;A. Dasgupta ,&nbsp;B. Chen","doi":"10.1016/j.microrel.2024.115511","DOIUrl":"10.1016/j.microrel.2024.115511","url":null,"abstract":"<div><div>The objective of this work is to develop a microstructure-based simulation approach to assess the fatigue life of solder joints that are used by the microelectronics industry. The developed approach can generate solder joints with random grain morphologies by means of 3D Voronoi tessellation. The anisotropic material behavior of each grain is described by the Garofalo creep equation combined with Hill's definition of the equivalent stress for anisotropic materials. Grain boundaries are implemented as interface elements, with an isotropic creep constitutive model. The stochastic variability in the creep response of solder joints was qualitatively estimated by generating 100 unique solder joints containing 5 to 9 grains, each having a random material orientation. These joints were independently loaded with a realistic stress level for microelectronic products during thermal cycling. The volume-averaged creep strain energy density in the solder joints was used to predict the fatigue life of the solder joints. The results showed a factor of ~4 difference in expected lifetime of the individual solder joints. Next, nine randomly picked solder joints from the above-mentioned pool of 100 were sandwiched between a silicon die and a printed circuit board to form a simulation model of a Wafer-Level Chip-Scale package (WLCSP). The creep strain energy density in the joints was computed for 34 unique cases of the WLCSP. A factor of ~2.5 between the highest and lowest estimate for the solder joint life was found. The slope of the corresponding Weibull distribution equals ~6, which falls within the slopes typical reported for solder joint reliability of WLCSPs.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115511"},"PeriodicalIF":1.6,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142324015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A remaining useful life prediction method of aluminum electrolytic capacitor with adaptive degradation model selection","authors":"Jindian Chen,&nbsp;Jigui Miao,&nbsp;Quan Yin","doi":"10.1016/j.microrel.2024.115509","DOIUrl":"10.1016/j.microrel.2024.115509","url":null,"abstract":"<div><div>The degradation process of aluminum electrolytic capacitors(AECs) usually exhibits characteristics such as non-linearity and multi-stage. These degradation features lead to the difficulty to accurately predict the remaining useful life(RUL) of the whole degradation process of AECs. To address this, by dividing the capacitor degradation process into two stages, a two-stage RUL prediction method for AECs considering multiple degradation models is proposed in this paper.In the offline parameter estimation phase, the initial degradation model parameters of two stages are estimated using two-step maximum likelihood estimation combined with particle swarm optimization(PSO) algorithm. In the dynamic parameter updating phase, a sequential Bayesian method is used to update the model parameters. To select the optimal degradation model, an evaluation method based on historical RUL similarity is proposed to calculate the fitness of each model. Finally, the effectiveness of the method is verified on NASA’s accelerated degradation data set and several widely used methods are used for comparison. The experimental results show that the proposed method has higher accuracy, which proves the superiority of the method.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115509"},"PeriodicalIF":1.6,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142324014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"500 μm heavy micro-alloyed Cu wire for IGBT application: The study on microstructure characteristics, electrical fatigue fracture mechanism and bonding reliability","authors":"Bo-Ding Wu,&nbsp;Fei-Yi Hung,&nbsp;Kang-Pei Chan","doi":"10.1016/j.microrel.2024.115512","DOIUrl":"10.1016/j.microrel.2024.115512","url":null,"abstract":"<div><div>In this study, we introduced trace amounts of silver and nickel into 500 μm diameter copper wires to form micro-alloyed copper wires used in insulated gate bipolar transistors (IGBT). The addition of silver and nickel enhanced the mechanical properties of the conductors and suppressed the work hardening effect, significantly improving the power cyclic lifetime. Additionally, this study conducted chlorination and high-temperature oxidation test to compare the application characteristics of the heavy micro-alloyed copper wires with pure copper wires, through tensile and bending test, as well as electrical property comparisons. Finally, Cu<img>50Ni (50 ppm Ni) wires were selected and nickel ceramic substrates for wire bonding to evaluate module electrical properties and bonding reliability.</div><div>In the chloride test, there was no significant pitting corrosion observed in copper wire, and the micro-alloyed copper wire outperformed the pure copper wires in terms of bending lifetime and power cycling performance. In the high-temperature oxidation test, an oxide layer of cuprous oxide formed on the surface of all wires. The pure copper wire exhibited a significant increase in resistance. Notably, the micro-alloyed copper wires had better resistance to oxidation. Regarding wire bonding, the use of Cu<img>50Ni wires and nickel ceramic substrates reduced the diffusion rate of nickel atoms from the substrate to the copper wire, forming a thinner alloy diffusion layer. This prevented electrical degradation and achieved high bonding reliability, especially under higher bonding forces. These findings confirm that micro-alloyed copper wires are suitable for high-power applications.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115512"},"PeriodicalIF":1.6,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142318651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical contact reliability investigation of high-speed electrical connectors under fretting wear behavior","authors":"Xin Lei,&nbsp;Chenzefang Feng,&nbsp;Weishan Lv,&nbsp;Yuqi Zhou,&nbsp;Chuanguo Xiong,&nbsp;Yuhan Gao,&nbsp;Fulong Zhu","doi":"10.1016/j.microrel.2024.115510","DOIUrl":"10.1016/j.microrel.2024.115510","url":null,"abstract":"<div><div>Fretting is one of the common phenomena during the use of electrical connectors, which is usually affected by the working environment and has a significant impact on the electrical contact life. In this work, the influence of different fretting wear conditions on electrical contact failure is studied by combining theoretical analysis, finite element simulation and experimental verification. The mechanical and electrical properties are related through experiments in different environments. It can be concluded that the main causes of electrical contact failure are contact structure deterioration and surface coating loss. Increased fretting cycles aggravate the surface fretting wear of high-speed electrical connectors. The failure of electrical connectors can be delayed by a decrease in frequency and amplitude in addition to an increase in coating thickness. The insertion and withdrawal force gradually decreases due to continuous wear. The failure mechanism of electrical contact during wear is also explained. It provides theoretical guidance for predicting the life of electrical connectors.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115510"},"PeriodicalIF":1.6,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142314599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid on-site nondestructive surface corrosion characterization of sintered nanocopper paste in power electronics packaging using hyperspectral imaging","authors":"Wei Chen ,&nbsp;Shuo Feng ,&nbsp;Xu Liu ,&nbsp;Dong Hu ,&nbsp;Xu Liu ,&nbsp;Xi Zhu ,&nbsp;Qi Yao ,&nbsp;Xuejun Fan ,&nbsp;Guoqi Zhang ,&nbsp;Jiajie Fan","doi":"10.1016/j.microrel.2024.115508","DOIUrl":"10.1016/j.microrel.2024.115508","url":null,"abstract":"<div><div>Sintered nanocopper (nanoCu) paste, exhibiting excellent electrical, thermal, and mechanical performances, offers promise for interconnections in wide bandgap (WBG) semiconductors operating at higher temperatures. However, sintered nanoCu is prone to severe corrosion in environments containing H₂S, with on-site characterization methods for the composition of corrosion products currently lacking. In this study, a novel method was proposed for the rapid characterization of corrosion products during the corrosion process based on hyperspectral imaging (HSI) technology. Sintered nanoCu samples were subjected to 336 h H₂S gas corrosion tests with bulk Cu as the reference, followed by correlating the corrosion element content with hyperspectral characteristic parameters. Then, the morphology and composition of corrosion products were researched using focused ion beam scanning electron microscope (FIB-SEM) and transmission electron microscope (TEM) analysis. The results showed that (1) during the corrosion process, a linear relationship was established between the Cu, O elemental atomic contents on the sample surfaces and their hyperspectral characteristic parameters. (2) The elemental atomic content of S exhibited an exponential relationship with the characteristic parameter. (3) The change rate in the spectral characteristic parameters during the corrosion process reflected the severity of corrosion, which was confirmed by comparing the thickness of the corrosion products of the sintered nanoCu and bulk Cu. This study offers a foundation for the further investigation of rapid on-site characterization of sintered nanoCu corrosion involving H₂S.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115508"},"PeriodicalIF":1.6,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142314598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}