A comparative study between the improved unified creep-plasticity model and Anand model: Experimental investigations at the material-scale and packaging structure-scale
IF 1.6 4区 工程技术Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Fan Yang , Yuexing Wang , Linwei Cao , Xiangyu Sun , Yao Yao
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引用次数: 0
Abstract
With the increasing miniaturization and complexity of electronic packaging, accurately characterizing internal mechanical responses through finite element simulation has become crucial for reliability assessment. This study comparatively evaluates the damage-coupled Unified Creep Plasticity (UCP) model and Anand model in simulating solder joint behavior under cyclic loading across material and structural levels. Material-level simulations of the SAC305 alloy under uniaxial tension-compression reveal that the damage-coupled UCP model yields smoother stress-strain curves with better experimental agreement, while the Anand model exhibits folded inflections near yield points, showing 12 % strain deviation. Structural-level analysis employing silicon-embedded stress sensors demonstrates that the UCP model's stress evolution correlates strongly with experimental measurements, whereas the Anand model shows 15–20 % peak stress deviations. Three-dimensional flip-chip BGA modeling further clarifies mechanistic differences: The Anand model omits plastic phase evolution, only capturing elastic and creep stages, while the UCP model fully describes three-phase evolution (elastic-plastic-creep), accurately reflecting actual deformation mechanisms. These multi-scale results validate the UCP model's superiority in characterizing visco-plastic behavior of solder joints, providing critical theoretical support for packaging reliability optimization.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.