Microelectronics Reliability最新文献_第5页

On the validity of rainflow counting-based lifetime assessment for power electronics assembly

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-10 DOI: 10.1016/j.microrel.2025.115651

D. Zhao, S. Letz, J. Leib, B. Eckardt

{"title":"On the validity of rainflow counting-based lifetime assessment for power electronics assembly","authors":"D. Zhao, S. Letz, J. Leib, B. Eckardt","doi":"10.1016/j.microrel.2025.115651","DOIUrl":"10.1016/j.microrel.2025.115651","url":null,"abstract":"<div><div>The lifetime assessment of power electronics based on mission profiles is increasingly applied to obtain realistic lifetime predictions while considering application-close operational scenarios. Generally, mission profile-based lifetime is calculated by individual temperature cycles disassembled from the mission profiles using specific counting methods. Among the different methods, rainflow counting (RC) method is the most common algorithmic procedure for determining damage-relevant events in power electronics. However, the conventional RC method does not consider the mechanical sequential effect and transient effect on damage caused by time-dependent material properties, especially at high temperatures during power module operation. In this paper, we investigate the validity of using the RC method for mission profile-based lifetime assessment of power modules. Through finite element (FE) modeling, we explicitly calculate both effects driven by the mission profile. For the selected mission profiles, we find that the lifetime of bond wire calculated by the FE approach shows a difference of 9 %, which cannot be sensed by the conventional RC approach. Furthermore, through a comparison between different approaches, it appears that the lifetime calculated by the RC approach is higher than the lifetime assessed by the FE approach by around 20 %. Simultaneously at the solder, the deviation between both approaches reaches around 95 %.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115651"},"PeriodicalIF":1.6,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A geometry-scalable electrothermal compact circuit model of SiC merged-PiN-Schottky diodes accounting for the snapback mechanism: Application to current surge events

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-10 DOI: 10.1016/j.microrel.2025.115668

A. Borghese, V. Terracciano, M. Boccarossa, A. Irace, V. d'Alessandro

引用次数: 0

Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115657

Dong Xie , Patrick Heimler , Roman Boldyrjew-Mast , Mohamed Alaluss , Sven Thiele , Josef Lutz , Thomas Basler

引用次数: 0

Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115646

T. Adlmaier , S. Doering , B. Binder , D.K. Simon , T. Mikolajick , L.M. Eng

引用次数: 0

PBO delamination and RDL corrosion detection on WLCSP package products

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115645

K. Bidaj , Y. Chen , J. Chang , O. Atance-Loustaunau , F. Braud , M. Medda

引用次数: 0

Reliability prediction of electronic components based on physical of failure with manufacturing parameters fluctuations

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-08 DOI: 10.1016/j.microrel.2025.115662

Zijian Guo , Hao Chen , Yifan Hu , Ji Jiang , Xuerong Ye

{"title":"Reliability prediction of electronic components based on physical of failure with manufacturing parameters fluctuations","authors":"Zijian Guo , Hao Chen , Yifan Hu , Ji Jiang , Xuerong Ye","doi":"10.1016/j.microrel.2025.115662","DOIUrl":"10.1016/j.microrel.2025.115662","url":null,"abstract":"<div><div>Reliability prediction based on the physics of failure (PoF) methodology involves examining the physical variables that impact the performance parameters of electronic components, developing mathematical models to describe the evolution of these parameters, and predicting the components' reliable operational lifespan. However, the current PoF model does not account for the influence of manufacturing parameters, such as material properties and structural characteristics, which limits the accuracy of reliability predictions. Therefore, establishing a PoF model that incorporates manufacturing parameters is a critical challenge in enhancing reliability prediction accuracy. To overcome this limitation, an improved PoF model incorporating manufacturing parameters is proposed in this study. The study examines how the manufacturing parameters influence the PoF model, then develops an adapted PoF model that incorporates these factors for improved predictive accuracy. Then, a parameter estimation method based on Long Short-Term Memory (LSTM) is proposed, with the Hybrid Bat Algorithm (HBA) employed to adaptively optimize the network's parameters. Finally, the effectiveness of the proposed method is demonstrated through a case study on an electromagnetic relay. Compared to the actual lifespan, the reliability prediction model incorporating manufacturing parameters accurately estimates the relay's lifetime, achieving deviation of only 5.8 % at 100,000 cycles, thereby verifying the model is feasibility and effectiveness.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115662"},"PeriodicalIF":1.6,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wire bonding failure characterization of an IGBT based power module through impedance analysis

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-08 DOI: 10.1016/j.microrel.2025.115669

P.-E. Vidal , S. Baffreau , G. Viné , A. Gopishetti , T.L. Long

引用次数: 0

Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115649

Riccardo Fraccaroli , Manuel Fregolent , Mirco Boito , Carlo De Santi , Eleonora Canato , Isabella Rossetto , Maria Eloisa Castagna , Cristina Miccoli , Alfio Russo , Ferdinando Iucolano , Alessio Pirani , Giansalvo Pizzo , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini

引用次数: 0

Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115660

R. Carluccio , A. Mancaleoni , G. Losacco , R. Villa , A. Serafini , L. Guarino , D. Dellasega

{"title":"Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires","authors":"R. Carluccio , A. Mancaleoni , G. Losacco , R. Villa , A. Serafini , L. Guarino , D. Dellasega","doi":"10.1016/j.microrel.2025.115660","DOIUrl":"10.1016/j.microrel.2025.115660","url":null,"abstract":"<div><div>Copper has pervasively replaced gold as preferred wire bonding material in Integrated Circuits (IC) plastic packaging. Different types of wires are available today in the market, with specific annealing treatments, coating and doping solutions aimed at optimizing bondability and reliability performances of the joints. In this study, the electrical resistance drift of packaged daisy chains has been analyzed to compare the lifetime potential of pure and alloyed copper wires under accelerated High Temperature Storage (HTS). Two aluminum-based bond-pads with different composition and thickness have been included in the experimental matrix. The results obtained through this statistically efficient and non-destructive methodology have been correlated with more “classical” readout data based on wire pull test, polished cross sections for Inter-Metallic Compounds (IMC) thickness measurement and TEM lamellas for phases stoichiometry characterization. Comparative analysis of the drift plots has pointed out a specific electrical signature for the consumption of the aluminum source under the IMC joint, confirmed by a Finite Element Method (FEM) simulation. A systematic delay in the IMC evolution has been demonstrated in all the samples with alloyed copper wires, correlating their lower ohmic drift with a lower thickness and a different composition of the IMC phases growing during HTS.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115660"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability assurance in foldable displays: Design of experiment-based testing strategy for market-ready products

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115673

U.H. Jeong , S.Y. Lim , S.S. Han

{"title":"Reliability assurance in foldable displays: Design of experiment-based testing strategy for market-ready products","authors":"U.H. Jeong , S.Y. Lim , S.S. Han","doi":"10.1016/j.microrel.2025.115673","DOIUrl":"10.1016/j.microrel.2025.115673","url":null,"abstract":"<div><div>Foldable displays have many moving parts and can operate in different environments. These conditions lead to potential interactions between diverse failure mechanisms and stresses, making reliability assurance a major challenge. Ensuring reliability while considering all these potential failure mechanisms and stresses is very challenging. This paper introduces a method for efficiently evaluating the reliability and lifespan of foldable displays. First, potential failure modes associated with foldable displays were identified, and corresponding influencing factors were determined. In addition to the fundamental stress factor of repetitive folding, temperatures, humidity, and temperature changes were chosen as influencing factors. To assess the influence of these factors on the display performance, two levels of stress severity were selected. Using these three factors and two stress levels, experiments were conducted using the design of experiments (DOE) method. The test results intuitively revealed the principal effects of each stress factor on the final quality and performance of the display. We found that low temperatures and temperature changes can affect the catastrophic failure of the display panel, and the number of folds impacts the degradation of the hinge parts. The proposed DOE-based evaluation method provides an efficient and economical approach for assessing the reliability of foldable displays.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115673"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0