{"title":"基于LSTM的直流接触器剩余使用寿命预测","authors":"Yu Wang , Yong Xie , Huimin Liang , Hangyu Ma","doi":"10.1016/j.microrel.2025.115815","DOIUrl":null,"url":null,"abstract":"<div><div>As a crucial electronic component in DC systems, predicting the Remaining Useful Life (RUL) of DC contactors can significantly enhance the operational reliability of the systems they are part of. Current methods for RUL prediction, which are based on single data points or traditional machine learning, face issues such as the selection of features that are inconvenient to monitor, high application costs, and low accuracy. In response, this paper proposes a method for predicting the RUL of DC contactors using Long Short-Term Memory (LSTM) neural networks. A specific DC contactor is examined as a case study to demonstrate the feasibility of applying this method. The advantage of the proposed method lies in its requirement for only the collection of current signals throughout the full lifecycle of the DC contactor to predict its RUL, resulting in low application costs. Compared to RUL prediction methods based on traditional Back Propagation Neural Networks (BPNN), this method achieves higher accuracy. Moreover, by considering key structural parameters that affect the lifespan of DC contactors, the method provides guidance for contactor design and exhibits better generalization capabilities in the predictive model.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"172 ","pages":"Article 115815"},"PeriodicalIF":1.9000,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Remaining useful life prediction of DC contactor based on LSTM\",\"authors\":\"Yu Wang , Yong Xie , Huimin Liang , Hangyu Ma\",\"doi\":\"10.1016/j.microrel.2025.115815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>As a crucial electronic component in DC systems, predicting the Remaining Useful Life (RUL) of DC contactors can significantly enhance the operational reliability of the systems they are part of. Current methods for RUL prediction, which are based on single data points or traditional machine learning, face issues such as the selection of features that are inconvenient to monitor, high application costs, and low accuracy. In response, this paper proposes a method for predicting the RUL of DC contactors using Long Short-Term Memory (LSTM) neural networks. A specific DC contactor is examined as a case study to demonstrate the feasibility of applying this method. The advantage of the proposed method lies in its requirement for only the collection of current signals throughout the full lifecycle of the DC contactor to predict its RUL, resulting in low application costs. Compared to RUL prediction methods based on traditional Back Propagation Neural Networks (BPNN), this method achieves higher accuracy. Moreover, by considering key structural parameters that affect the lifespan of DC contactors, the method provides guidance for contactor design and exhibits better generalization capabilities in the predictive model.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"172 \",\"pages\":\"Article 115815\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271425002288\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425002288","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Remaining useful life prediction of DC contactor based on LSTM
As a crucial electronic component in DC systems, predicting the Remaining Useful Life (RUL) of DC contactors can significantly enhance the operational reliability of the systems they are part of. Current methods for RUL prediction, which are based on single data points or traditional machine learning, face issues such as the selection of features that are inconvenient to monitor, high application costs, and low accuracy. In response, this paper proposes a method for predicting the RUL of DC contactors using Long Short-Term Memory (LSTM) neural networks. A specific DC contactor is examined as a case study to demonstrate the feasibility of applying this method. The advantage of the proposed method lies in its requirement for only the collection of current signals throughout the full lifecycle of the DC contactor to predict its RUL, resulting in low application costs. Compared to RUL prediction methods based on traditional Back Propagation Neural Networks (BPNN), this method achieves higher accuracy. Moreover, by considering key structural parameters that affect the lifespan of DC contactors, the method provides guidance for contactor design and exhibits better generalization capabilities in the predictive model.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.