Interconnect electromigration modeling based on chemical mechanical polishing process variation

The interconnect electromigration (EM) analysis technology based on process variation is innovatively proposed in this study. The defect morphology in the interconnect is accurately described for the dishing defect characterization of the interconnect, and the interconnect based on technology computer aided design (TCAD) model under the influence of flattening process like chemical mechanical polishing (CMP) variation is established. For different interconnect structures and defect types, accurate simulation analysis of temperature, current density and electromigration phenomena in complex process variation environments is realized, which provides theoretical support and analysis methods for improving the reliability and performance optimization of interconnects. Moreover, the void growth model and resistance switching model of interconnect electromigration considering process variation are proposed, and the mean time to failure (MTTF) model of interconnect electromigration is established to improve the accuracy of electromigration failure time and reliability model.