Microelectronics Reliability最新文献_第6页

HTRB effects on threshold instability of 4H-SiC PowerMOSFET with carrots defects HTRB对具有胡萝卜缺陷的4H-SiC功率mosfet阈值不稳定性的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-13 DOI: 10.1016/j.microrel.2025.115781

L. Anoldo , G. Tosto , Z. Dahrouch , S. Bevilacqua , E. Schroer , S. Patanè , A. Russo

引用次数: 0

A review in thermal management for advanced chip packaging from chip to heat sink 先进芯片封装从芯片到散热器的热管理综述

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-12 DOI: 10.1016/j.microrel.2025.115782

Minsoo Kim , Jaehyun Kim , Woosung Park , Joon Sang Kang

{"title":"A review in thermal management for advanced chip packaging from chip to heat sink","authors":"Minsoo Kim , Jaehyun Kim , Woosung Park , Joon Sang Kang","doi":"10.1016/j.microrel.2025.115782","DOIUrl":"10.1016/j.microrel.2025.115782","url":null,"abstract":"<div><div>As the architectural complexity of semiconductor devices increases, energy-efficient thermal management in semiconductor packages has become a significant challenge. The effectiveness of thermal management dictates the performance and reliability of semiconductor packaging, making it a crucial factor in the design of high-performance and high-density systems. This review provides a detailed overview of recent advances in thermal management solutions for semiconductor packages, with a particular focus on heat conduction from the chip to the heat sink. The review first introduces advanced thermal characterization techniques, which are essential for evaluating the passive thermal performance of chip packages. It then explores the use of high thermal conductivity materials in various components, such as thermal interface materials (TIMs), heat spreaders, and package substrates, all of which are critical for improving heat dissipation. Additionally, the review examines design aspects aimed at enhancing heat removal rates, including interface engineering between dissimilar components and the incorporation of thermal vias within a package. The aforementioned approaches can be combined to optimize overall thermal performance in semiconductor packages, requiring careful material selection and appropriate thermal engineering design.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115782"},"PeriodicalIF":1.6,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143935967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing AC degradation modeling by considering the degradation profile in SiON pMOSFETs 通过考虑pmosfet的退化特性来增强交流退化建模

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-09 DOI: 10.1016/j.microrel.2025.115771

Yeohyeok Yun

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Corrosion failure analysis of printed circuit boards exposed to H2S resulting from the decomposition of sargassum algae 马尾藻分解产生的H2S对印刷电路板的腐蚀失效分析

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-08 DOI: 10.1016/j.microrel.2025.115784

Benoit Lescop , Olivia Amintas , Carole Boullanger , Stéphane Rioual

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An analytical model for calculating transient temperatures of 3-D integrated system considering heat capacity variations 考虑热容变化的三维集成系统瞬态温度分析模型

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-07 DOI: 10.1016/j.microrel.2025.115777

Xin Jin, Junqin Zhang, Luhao Zhai, Wenting Chen, Guangbao Shan, Yintang Yang

{"title":"An analytical model for calculating transient temperatures of 3-D integrated system considering heat capacity variations","authors":"Xin Jin, Junqin Zhang, Luhao Zhai, Wenting Chen, Guangbao Shan, Yintang Yang","doi":"10.1016/j.microrel.2025.115777","DOIUrl":"10.1016/j.microrel.2025.115777","url":null,"abstract":"<div><div>Constant pressure heat capacity is an important property that affects thermal diffusivity when calculating the transient temperature of three-dimensional (3-D) integrated systems, but current analytical models usually do not consider the effect of heat capacity. Acknowledging the temperature-dependent nature of heat capacity for materials within the AlN-substrate-based 3-D integrated system, a novel anisotropic transient thermal analytical model that takes into account the heat capacity's temperature-dependent variation is proposed. Initially, the AlN substrate, integrated with a through ceramic via (TCV) array, is modeled as a homogenized structure utilizing the equivalent thermal conductivity (ETC) model. Subsequently, an anisotropic transient thermal analytical model based on Fourier series was established, and the heat capacity values of various materials in the analytical model were updated in real time. The analytical model was compared with the finite element method (FEM), showing a relative error of about 0.73 % in the transient peak temperature predictions, which indicates a high level of agreement with the FEM results. Furthermore, the time required to extract the transient peak temperature within a 10-s simulation using our analytical model was only 0.43 s, which is 885 times faster than the FEM. This demonstrates that the proposed model excels in computational precision and velocity, offering a reliable and efficient strategy for predicting the thermal management needs of 3-D integrated systems.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115777"},"PeriodicalIF":1.6,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New methodology for optimal preconditioning of GaN HEMT devices GaN HEMT器件最佳预处理的新方法

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-06 DOI: 10.1016/j.microrel.2025.115776

Maroun Alam , Valeria Rustichelli , Christophe Banc , Jean-François Pieprzyk , Olivier Perrotin , Romain Ceccarelli , David Trémouilles , Mohamed Matmat , Fabio Coccetti

{"title":"New methodology for optimal preconditioning of GaN HEMT devices","authors":"Maroun Alam , Valeria Rustichelli , Christophe Banc , Jean-François Pieprzyk , Olivier Perrotin , Romain Ceccarelli , David Trémouilles , Mohamed Matmat , Fabio Coccetti","doi":"10.1016/j.microrel.2025.115776","DOIUrl":"10.1016/j.microrel.2025.115776","url":null,"abstract":"<div><div>High Electron Mobility Transistors (HEMTs) based on p-type Gallium Nitride (p-GaN) gate have emerged as promising candidates for next-generation high frequency and high-power applications. However, these devices present a threshold-voltage (V<sub>th</sub>) fluctuation impacting their performance and reliability over time. While V<sub>th</sub> fluctuations have been commonly associated with device aging, recent research has uncovered evidence suggesting that certain variations are unrelated to aging effects but rather stem from potentially recoverable trapping phenomena.</div><div>This study has demonstrated that the biases applied to the gate and drain contribute to the observed variations in V<sub>th</sub>. To mitigate these fluctuations, a systematic methodology is proposed for establishing an optimal preconditioning protocol capable of stabilizing the V<sub>th</sub> and ensuring consistent device measurements over different biasing conditions. The optimal electrical preconditioning protocol involves applying a defined voltage to the gate and or to the drain right before V<sub>th</sub> measurement, ensuring an acceptable stability of V<sub>th</sub> measurements. Furthermore, our findings illustrate that the preconditioning protocol is dependent on the technology of the reference.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115776"},"PeriodicalIF":1.6,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143907800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate SiC衬底上AlGaN/GaN HEMT技术的直流和射频老化试验

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-03 DOI: 10.1016/j.microrel.2025.115772

Thomas Pallaro , Tristan Dubois , Magali De Matos , Christophe Chang , Nathalie Labat , Benoit Lambert , Nathalie Malbert

引用次数: 0

Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations 不同铝浓度的AlGaN背势垒对AlGaN/GaN hemt捕集机理的影响研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-03 DOI: 10.1016/j.microrel.2025.115758

Andrea Carlotto, Fabiana Rampazzo, Marco Saro, Francesco De Pieri, Manuel Fregolent, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

引用次数: 0

Spacecraft sensor data reliability improvement based on spatio-temporal information fusion model 基于时空信息融合模型的航天器传感器数据可靠性改进

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-02 DOI: 10.1016/j.microrel.2025.115774

Yingqi Wang , Yuchen Song , Runze Yu , Shengwei Meng , Yu Peng , Datong Liu

{"title":"Spacecraft sensor data reliability improvement based on spatio-temporal information fusion model","authors":"Yingqi Wang , Yuchen Song , Runze Yu , Shengwei Meng , Yu Peng , Datong Liu","doi":"10.1016/j.microrel.2025.115774","DOIUrl":"10.1016/j.microrel.2025.115774","url":null,"abstract":"<div><div>Spacecraft sensor data is crucial for evaluating the operating status and environment of spacecraft. However, due to factors such as component aging, space environment interference, and unstable satellite-to-ground communication, obtaining high-reliability sensor data is challenging. Additionally, the high dimensionality, complex correlations, strong temporal dependencies, and noise in sensor data further complicate efforts to improve data reliability. To address these challenges, this paper proposes a sensor reliability improvement method based on a multi-layer spatio-temporal information fusion model (STIFM). First, a moving average filter is applied to the raw data to reduce the impact of noise on modeling. Next, the Transformer model is used to establish data estimation models for different sensors in spatial scale and the same sensor in temporal scale. The outputs from these spatiotemporal models are then fused using particle filtering, and the uncertainty of the results is quantitatively assessed. Based on this, data anomaly detection and recovery are performed using the confidence interval of the STIFM output. Finally, the proposed method is validated using satellite flywheel on-orbit data. Experimental results show that the proposed method achieves at least 93.55 % accuracy in abnormal scenarios and significantly extends the mean time to failures (MTTF), outperforming existing methods. This indicates that the method proposed in this paper can effectively enhance the reliability of spacecraft sensor data.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115774"},"PeriodicalIF":1.6,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143895366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design-of-Experiments and ALT plan for reliability qualification of chip resistors based on mission profile of AIMDs 基于空空导弹任务剖面的片式电阻器可靠性鉴定实验设计与ALT方案

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-02 DOI: 10.1016/j.microrel.2025.115773

F.-E. Indmeskine , L. Saintis , A. Kobi , H. Marceau

引用次数: 0