Single-particle irradiation effect and anti-irradiation optimization of a heterogeneous dielectric vertical TFET with dual material gate

In this paper, the single-particle irradiation effect of a dual material gate heterogeneous dielectric vertical TFET (DMG-HD-VTFET) is investigated. During the irradiation, single-particle having a certain energy value generates electron-hole pairs along the incident path, which results in transient current that can disrupt the device's logic state when the quantity of these pairs becomes sufficiently large. In simulation of single-particle irradiation effect and anti-irradiation optimization, the energy carried by single-particle is represented by the linear energy transfer (LET) value. The typical value of LET is 10 MeV·cm²/mg, which is equivalent to 0.25 pC/μm along incident path. In our simulation, we first investigate the influence of single-particle with different LET energy, then the influence of incident angle variation on single-particle effect is simulated. Further, the influence of incident completion time, incident position and drain bias voltage on single-particle effect is explored. Based on these findings, anti-irradiation optimization for DMG-HD-VTFET is performed, where the dielectric and length of tunneling gate is compromised to enhance the reliability.