High-performance, low-area-overhead, and low-delay triple-node-upset self-recoverable latch design based on stacked transistors

Abstract

Due to the gradual reduction in the feature size of transistors in integrated circuits (ICs), triple-node-upsets (TNUs) caused by the striking of energetic particles in harsh radiation environments have become a considerable reliability concern for ICs. To overcome the limitations of current radiation-hardened designs regarding overhead and reliability, this paper proposes a high-performance, low-area-overhead, and low-delay TNU self-recoverable latch (HLLT) based on N-type stacked transistors for aerospace applications. The proposed HLLT latch comprises three symmetrical modules that protect each other. In addition, high-speed path and clock gating technology are employed to reduce delay overhead and power consumption, respectively. Simulation results show that, compared to five existing TNU-recoverable latches, the proposed HLLT latch achieves average reductions of 29.97 %, 57.12 %, 36.52 %, and 83.00 % in area overhead, power consumption, delay, and area-power-delay-product (APDP), respectively. Furthermore, the proposed HLLT latch has lower sensitivity and better stability to variations in PVT (Process, Voltage, Temperature).