Yucong He , Yang Zheng , Zheng Liu , Xixuan Jiao , Yaocheng Zhang , Li Yang , Xiuting Zhao
{"title":"Microstructure and properties of Cu/In-Sn-xZn-yAg/Cu solder joints after thermal aging","authors":"Yucong He , Yang Zheng , Zheng Liu , Xixuan Jiao , Yaocheng Zhang , Li Yang , Xiuting Zhao","doi":"10.1016/j.microrel.2025.115837","DOIUrl":null,"url":null,"abstract":"<div><div>Cu/In-Sn-5Zn/Cu and Cu/In-Sn-2.5Zn-50Ag/Cu solder joints were prepared by Transient Liquid Phase (TLP) bonding. The solder joints were aged at 50 °C, 75 °C and 100 °C for 1008 h to study the microstructural evolution and changes in shear strength. After long-term thermal aging, cracks appeared in the in-situ reaction zone of Cu/In-Sn-5Zn/Cu solder joints. The addition of Ag nanoparticles led to the generation of Ag₃In phases in Cu/In-Sn-2.5Zn-50Ag/Cu solder joints, which were dispersed in the in-situ reaction zone and effectively hindered crack propagation. After long-term thermal aging, potential crack propagation regions formed by the aggregation of Kirkendall voids appeared in the interfacial reaction zone of Cu/In-Sn-5Zn/Cu solder joints. The addition of Ag particles inhibited the overgrowth of Cu₃(In,Sn) intermetallic compound (IMC) and the formation of Kirkendall voids, enabling the solder joints to maintain a dense interfacial structure and high shear strength after long-term thermal aging. The cracks in the in-situ reaction zone and Kirkendall voids in the interfacial reaction zone of Cu/In-Sn-5Zn/Cu solder joints affected the shear strength and fracture location. The fracture locations of Cu/In-Sn-2.5Zn-50Ag/Cu solder joints were relatively stable and all occurred in the in-situ reaction zone.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"172 ","pages":"Article 115837"},"PeriodicalIF":1.9000,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425002501","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Cu/In-Sn-5Zn/Cu and Cu/In-Sn-2.5Zn-50Ag/Cu solder joints were prepared by Transient Liquid Phase (TLP) bonding. The solder joints were aged at 50 °C, 75 °C and 100 °C for 1008 h to study the microstructural evolution and changes in shear strength. After long-term thermal aging, cracks appeared in the in-situ reaction zone of Cu/In-Sn-5Zn/Cu solder joints. The addition of Ag nanoparticles led to the generation of Ag₃In phases in Cu/In-Sn-2.5Zn-50Ag/Cu solder joints, which were dispersed in the in-situ reaction zone and effectively hindered crack propagation. After long-term thermal aging, potential crack propagation regions formed by the aggregation of Kirkendall voids appeared in the interfacial reaction zone of Cu/In-Sn-5Zn/Cu solder joints. The addition of Ag particles inhibited the overgrowth of Cu₃(In,Sn) intermetallic compound (IMC) and the formation of Kirkendall voids, enabling the solder joints to maintain a dense interfacial structure and high shear strength after long-term thermal aging. The cracks in the in-situ reaction zone and Kirkendall voids in the interfacial reaction zone of Cu/In-Sn-5Zn/Cu solder joints affected the shear strength and fracture location. The fracture locations of Cu/In-Sn-2.5Zn-50Ag/Cu solder joints were relatively stable and all occurred in the in-situ reaction zone.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.