Impact of near interface defects on NO annealed SiC MOSFET mobility

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-07-02 DOI:10.1016/j.microrel.2025.115841

Yu-Xin Wen , Bing-Yue Tsui , Kin P. Cheung

引用次数: 0

Abstract

The cause of low mobility in SiC MOSFETs, particularly after post-oxidation nitric oxide (NO) annealing, remains a critical question in wide-bandgap device reliability. Previous reports have attributed poor mobility to the formation of fast near-interface traps (NITs) introduced by NO annealing. In this study, we utilize fast drain current–gate voltage (I_d-V_g) measurements, which has a simple interpretation, to directly probe these NITs to check if these assertions are true. Our fast drain current–gate voltage measurements show that on the time scales of 10 ns to 500 ns, filling near interface traps leads to <10 % reduction in the mobility, implying that such traps cannot explain the poor mobility in SiC MOSFETs. This finding challenges the attribution of poor mobility solely to fast NITs and point toward alternative mechanisms, such as above band edge states.

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近界面缺陷对NO退火SiC MOSFET迁移率的影响

SiC mosfet中迁移率低的原因，特别是氧化后一氧化氮（NO）退火后的迁移率低，仍然是宽带隙器件可靠性的关键问题。以前的报道将迁移率差归因于NO退火引入的快速近界面陷阱（NITs）的形成。在这项研究中，我们利用快速漏极电流门电压（Id-Vg）测量，它有一个简单的解释，直接探测这些nit来检查这些断言是否成立。我们的快速漏极电流门电压测量表明，在10 ns至500 ns的时间尺度上，填充近界面陷阱导致迁移率降低10%，这意味着这些陷阱不能解释SiC mosfet中迁移率差的原因。这一发现挑战了将低迁移率仅仅归因于快速nit的观点，并指出了其他机制，如带以上边缘状态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.