电源整流器浪涌事件时的局部热失控

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-06-26 DOI:10.1016/j.microrel.2025.115833

Ole Jonathan Bergmann , Tim Boettcher , Hoan Vu , Hoc Khiem Trieu

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引用次数: 0

摘要

本文提出了电源整流器在浪涌电流事件中器件失效的模型。这些设备的一个可能的故障原因是超过浪涌电流。因此，详细了解浪涌条件下的设备行为和相关的故障模式对于实现和保持稳定的设备性能至关重要。在这项工作中，从实验确定整流二极管失效温度的角度研究了IFSM的失效模式。在芯片上确定了受应力器件的失效位置，并进行了局部电热模拟来模拟温度分布。模拟的温度分布与分析的故障位置吻合。如果考虑到PN结或肖特基触点的空穴注入，则可以用PN二极管和肖特基二极管的局部热失控来解释这种失效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Local thermal runaway during surge events in power rectifiers

This article presents a model for device failure of power rectifiers during surge current events. A possible failure cause of those devices are exceeding surge currents. Therefore, the detailed understanding of the device behaviour under surge conditions and the related failure mode is essential to achieve and maintain a stable device performance. In this work, the IFSM failure mode is investigated in terms of experimental determination of the failure temperature for rectifier diodes. The failure locations of the stressed devices are determined on the chip and partial-electro-thermal simulations are run to model the temperature distribution. The simulated temperature distribution matches with the analysed failure locations. The failure can be explained by local thermal runaway for PN as well as Schottky diodes, if hole injection from the PN junction or the Schottky contact is taken into account.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.