Reliability of discrete SiC MOSFETs under severe temperature-shock and power cycling tests

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-07-03 DOI:10.1016/j.microrel.2025.115844

Patrick Heimler, Sandro Richter, Josef Lutz, Thomas Basler

引用次数: 0

Abstract

In this work, discrete SiC MOSFETs with an R_DS(ON) of 60 mΩ and a blocking capability of 1200 V have been subjected to extreme thermal shock tests and additional power cycling tests to study interactions between the failure modes in both tests. In this context, an R_th,jc (thermal resistance: junction - case) increase of up to 55 %, confirmed by found solder degradation in cross sections, can be noted after the thermal shock test. However, bond wire degradation remains the dominant cause of failure after the power cycling test, even if the solder layer of the test specimens was previously damaged.

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离散SiC mosfet在剧烈温度冲击和功率循环试验下的可靠性

在这项工作中，RDS（ON）为60 mΩ，阻塞能力为1200 V的分立SiC mosfet进行了极端热冲击测试和额外的功率循环测试，以研究两种测试中失效模式之间的相互作用。在这种情况下，在热冲击试验后，可以注意到Rth，jc（热阻：结壳）增加高达55%，这是通过发现焊料在截面上的退化来证实的。然而，在电源循环测试后，即使测试样品的焊接层先前已经损坏，键合线退化仍然是导致失败的主要原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.