F. Richardeau , L. Ghizzo , D. Trémouilles , S. Vinnac
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引用次数: 0
Abstract
The authors proposed in-depth experimentation and physical analysis showing the extreme robustness capability of low-voltage GaN HEMT in single and repetitive short-circuit. A 2DEG pinch-off behavior is analyzed depending on VDS voltage and charges' trapping / de-trapping relaxation time. A new drain–gate leakage-current mechanism at turn-off is suggested to explain the ultimate thermal-runaway failure-mechanism.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.