{"title":"对三相逆变器老化功率Si-MOSFET进行了电磁干扰评估","authors":"Mohamed TLIG , Bassem ZITOUNA , Moncef KADI , Mahmoud HAMMOUDA , Jaleleddine BEN HADJ SLAMA","doi":"10.1016/j.microrel.2025.115872","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, we demonstrate that accelerated aging tests of power electronic components (specifically Si-based N-MOSFETs in our case) have an adverse effect on the conducted emissions (common and differential mode) in a 3-phase inverter used to drive an induction motor. To achieve this, we conduct electric accelerated aging tests while operating the power transistors to measure their conducted emissions before and after aging. A comparison between measurements in the time and frequency domains is presented to deduce the effect of aging on the Si-based N-MOSFETs. Experimental results show that after aging, there is an increase in the amplitude of conducted electromagnetic interference (EMI). Furthermore, this increase leads to electrical parameter degradation that has been investigated in EMI tests.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"173 ","pages":"Article 115872"},"PeriodicalIF":1.6000,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Conducted EMI assessment of aging power Si-MOSFET in 3 phase inverter\",\"authors\":\"Mohamed TLIG , Bassem ZITOUNA , Moncef KADI , Mahmoud HAMMOUDA , Jaleleddine BEN HADJ SLAMA\",\"doi\":\"10.1016/j.microrel.2025.115872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this paper, we demonstrate that accelerated aging tests of power electronic components (specifically Si-based N-MOSFETs in our case) have an adverse effect on the conducted emissions (common and differential mode) in a 3-phase inverter used to drive an induction motor. To achieve this, we conduct electric accelerated aging tests while operating the power transistors to measure their conducted emissions before and after aging. A comparison between measurements in the time and frequency domains is presented to deduce the effect of aging on the Si-based N-MOSFETs. Experimental results show that after aging, there is an increase in the amplitude of conducted electromagnetic interference (EMI). Furthermore, this increase leads to electrical parameter degradation that has been investigated in EMI tests.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"173 \",\"pages\":\"Article 115872\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2025-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271425002859\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425002859","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Conducted EMI assessment of aging power Si-MOSFET in 3 phase inverter
In this paper, we demonstrate that accelerated aging tests of power electronic components (specifically Si-based N-MOSFETs in our case) have an adverse effect on the conducted emissions (common and differential mode) in a 3-phase inverter used to drive an induction motor. To achieve this, we conduct electric accelerated aging tests while operating the power transistors to measure their conducted emissions before and after aging. A comparison between measurements in the time and frequency domains is presented to deduce the effect of aging on the Si-based N-MOSFETs. Experimental results show that after aging, there is an increase in the amplitude of conducted electromagnetic interference (EMI). Furthermore, this increase leads to electrical parameter degradation that has been investigated in EMI tests.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.