功率循环下功率模块疲劳寿命的体积加权平均预测

IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Guoliao Sun , Wenhui Zhu , Liangcheng Wang , Hongwei Liu , Xianchi Wang
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引用次数: 0

摘要

随着电动汽车(EV)电源模块功率密度的不断提高,双面冷却(DSC)技术已成为研究热点。然而,DSC功率模块的商业化受到其复杂的制造工艺和高昂的开发成本的严重阻碍。传统的电力循环可靠性评估方法成本高、耗时长,不利于技术的快速迭代和进步。本研究提出了一种基于体积加权平均应变能密度的寿命预测模型,利用全局体积加权平均技术,而不是专注于焊点的最大应力和应变位置。通过最小二乘曲线拟合分析,将大量体积加权平均应变能密度模拟结果与相应的功率循环试验结果进行关联,从而确定寿命预测模型中的材料特异性疲劳系数。利用市售的绝缘栅双极晶体管(IGBT)功率模块验证了该模型的可行性。此外,还全面评估了不同缓冲材料对DSC IGBT功率模块寿命的影响。本研究为加速DSC电源模块的未来发展提供了有价值的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fatigue lifetime prediction of power modules under power cycling using a volume-weighted averaging technique
With the continuous increase in power density of electric vehicle (EV) power modules, double-sided cooling (DSC) technology has become a focal point of research. However, the commercialization of DSC power modules is significantly hindered by their complex manufacturing processes and high development costs. Traditional power cycling reliability assessment methods, which are costly and time-consuming, are not conducive to rapid technological iteration and advancement. This study proposes a lifetime prediction model based on volume-weighted average strain energy density, utilizing a global volume-weighted averaging technique rather than focusing on the maximum stress and strain locations at solder joints. Through least-squares curve fitting analysis, numerous volume-weighted average strain energy density simulation results were correlated with corresponding power cycling test results, allowing the determination of material-specific fatigue coefficients in the lifetime prediction model. The feasibility of the proposed model was validated using commercially available insulated-gate bipolar transistor (IGBT) power modules. Furthermore, the influence of different buffer materials on the lifetime of DSC IGBT power modules was thoroughly evaluated. This study provides valuable insights for accelerating the development of DSC power modules in the future.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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