Microelectronics Journal最新文献

筛选
英文 中文
E-band T/R MMIC for 5G millimeter wave applications 用于5G毫米波应用的e波段T/R MMIC
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-14 DOI: 10.1016/j.mejo.2025.106758
Zhenbei Li, Nan Guo, Huanhuan Guan, Jian Zhang, Qiuze Yu
{"title":"E-band T/R MMIC for 5G millimeter wave applications","authors":"Zhenbei Li,&nbsp;Nan Guo,&nbsp;Huanhuan Guan,&nbsp;Jian Zhang,&nbsp;Qiuze Yu","doi":"10.1016/j.mejo.2025.106758","DOIUrl":"10.1016/j.mejo.2025.106758","url":null,"abstract":"<div><div>This paper presents a T/R MMIC operating in the 66–76 GHz frequency range, designed utilizing 0.10-<span><math><mi>μ</mi></math></span>m GaAs pHEMT technology. In transmit (Tx) mode, a four-stage cascaded power amplifier with a four-way power combining architecture is implemented, utilizing T-junctions and a Lange coupler for efficient power synthesis. A compact bus-fed power supply structure is adopted to minimize chip area. In receive (Rx) mode, a four-stage cascaded low-noise amplifier (LNA) is integrated with a compact size. A low insertion loss single-pole double-throw (SPDT) switch with a parallel structure enables Tx/Rx switching and exhibits high power-handling capability. Measurement results indicate that the T/R MMIC achieves a gain of 15.7–16.2 dB and an output 1 dB compression point (OP1 dB) of 17.3–19.2 dBm in Tx mode. In Rx mode, the circuit provides a gain of 18.9–21.2 dB with a noise figure ranging from 6.5 dB to 7.5 dB. Occupying a compact size of 2.3 ×2.8 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>, the proposed MMIC demonstrates strong potential for 5G millimeter wave applications.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106758"},"PeriodicalIF":1.9,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144313787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and analysis of a ring-VCO based low jitter PLL 基于环形压控振荡器的低抖动锁相环的设计与分析
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-13 DOI: 10.1016/j.mejo.2025.106771
Wei Zou , Jionghui Zhang , Zhengwang Cheng , Mei Wang , Li Zhang , Xuecheng Zou
{"title":"Design and analysis of a ring-VCO based low jitter PLL","authors":"Wei Zou ,&nbsp;Jionghui Zhang ,&nbsp;Zhengwang Cheng ,&nbsp;Mei Wang ,&nbsp;Li Zhang ,&nbsp;Xuecheng Zou","doi":"10.1016/j.mejo.2025.106771","DOIUrl":"10.1016/j.mejo.2025.106771","url":null,"abstract":"<div><div>A fully integrated low jitter phase-locked loop (PLL) with a ring voltage-controlled oscillator (ring-VCO) is fabricated using a SMIC 0.13 μm CMOS technology. The design of low jitter PLLs and the relationship between phase noise and integrated RMS jitter are investigated via theoretical analysis and verified by experiments. A differential ring-VCO and charge pump (CP) are proposed to mitigate the common-mode noise generated by the substrate, power supply, and control lines. The designs of ring-VCO and CP are optimized to reduce out-band and in-band phase noises of PLL, respectively. A measured integrated RMS jitter of 4.48 ps is realized at 480 MHz output and a phase noise of −128.1 dBc/Hz is achieved at 20 MHz offset. The PLL consumes 7.3 mA from a 3.3 V supply, with a die occupation of 430 μm × 820 μm.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106771"},"PeriodicalIF":1.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144280880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A PLL-based capacitance-to-voltage (C-to-V) converter for permittivity measurement sensors 基于锁相环的电容-电压(c -v)转换器,用于介电常数测量传感器
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-13 DOI: 10.1016/j.mejo.2025.106754
Surya Varchasvi Devaraj , Reddygari Bhupal Dheeraj , Khalid Shaikh, Parth Makode, Monika, Laxmeesha Somappa, Maryam Shojaei Baghini
{"title":"A PLL-based capacitance-to-voltage (C-to-V) converter for permittivity measurement sensors","authors":"Surya Varchasvi Devaraj ,&nbsp;Reddygari Bhupal Dheeraj ,&nbsp;Khalid Shaikh,&nbsp;Parth Makode,&nbsp;Monika,&nbsp;Laxmeesha Somappa,&nbsp;Maryam Shojaei Baghini","doi":"10.1016/j.mejo.2025.106754","DOIUrl":"10.1016/j.mejo.2025.106754","url":null,"abstract":"<div><div>A fully integrated sensing system is proposed for a wide-band capacitive-to-voltage converter (C2V). The system utilizes a differential delay cell voltage-controlled oscillator (VCO) incorporated in a phase-locked loop (PLL). The PLL controls the VCO operation frequency, and the PLL’s control voltage varies with the capacitance across the VCO. This control voltage is sensed to extract the capacitance and the corresponding permittivity. In comparison to the existing techniques, the proposed PLL C2V converter offers digital programmability with a wide operating frequency of 0.1 GHz–1 GHz, a low power consumption of 9.78 mW, a 20 ms response time, and a capacitance range of 0.3 pF–30 pF with an offset of 4.5 pF. The fully integrated PLL C2V converter is fabricated in 65 nm MM CMOS and occupies 0.0173 <span><math><msup><mrow><mi>mm</mi></mrow><mrow><mn>2</mn></mrow></msup></math></span> of active area. The PLL C2V converter is tested with a digitally tunable RF capacitor PE64102 emulating the sensor capacitor and can accurately measure capacitance with an error of <span><math><mo>±</mo></math></span> <span><math><mrow><mi>1.98</mi><mtext>%</mtext></mrow></math></span>. The PLL C2V ASIC is further integrated with a capacitive soil moisture sensor and is demonstrated for soil moisture sensing applications. The soil moisture measurements with the proposed system showed it can accurately estimate the moisture content with an error of −1.08% to 2.51%.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106754"},"PeriodicalIF":1.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144313788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 12-bit 2GS/s current-steering DAC with 27 mW power consumption in 28 nm CMOS 一个12位2GS/s电流转向DAC,功耗为27mw,采用28nm CMOS
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-12 DOI: 10.1016/j.mejo.2025.106756
Beiqi Duan , Junyan Bi , Hao Xu , Guoyu Li , Yechen Tian , Na Yan
{"title":"A 12-bit 2GS/s current-steering DAC with 27 mW power consumption in 28 nm CMOS","authors":"Beiqi Duan ,&nbsp;Junyan Bi ,&nbsp;Hao Xu ,&nbsp;Guoyu Li ,&nbsp;Yechen Tian ,&nbsp;Na Yan","doi":"10.1016/j.mejo.2025.106756","DOIUrl":"10.1016/j.mejo.2025.106756","url":null,"abstract":"<div><div>This paper presents a 12-bit, 2GS/s current-steering digital-to-analog converter (DAC) implemented in 28 nm Bulk CMOS technology for high data rate wireless communication. The analysis of noise sources determines the minimum current required for the circuit. The major distortion mechanisms are analyzed to derive a design strategy for maximum linearity. A 5-4-3 segmented architecture is utilized to improve linearity, and a hierarchical switching scheme sequence is adopted to overcome the gradient error of the current arrays. Measurements show that the DAC achieves an SFDR<span><math><mo>&gt;</mo></math></span>80dBc at low frequency and an SFDR<span><math><mo>&gt;</mo></math></span>53dBc up to 500 MHz. This DAC achieves an IMD<span><math><mo>&lt;</mo></math></span>-80dBc at low frequency and an IMD<span><math><mo>&lt;</mo></math></span>-53dBc up to 500 MHz with a total power consumption of 27 mW at 1 V supply.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106756"},"PeriodicalIF":1.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144308071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on fuzzy control based background calibration of pipelined ADCs 基于模糊控制的流水线adc背景标定研究
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-10 DOI: 10.1016/j.mejo.2025.106748
Luotian Wu, Honghui Deng, Jiashen Li, Muqi Li, Long Li, Runhui Chen, Yongsheng Yin
{"title":"Research on fuzzy control based background calibration of pipelined ADCs","authors":"Luotian Wu,&nbsp;Honghui Deng,&nbsp;Jiashen Li,&nbsp;Muqi Li,&nbsp;Long Li,&nbsp;Runhui Chen,&nbsp;Yongsheng Yin","doi":"10.1016/j.mejo.2025.106748","DOIUrl":"10.1016/j.mejo.2025.106748","url":null,"abstract":"<div><div>This article proposes a rapid and novel background calibration algorithm employing fuzzy control to address nonlinear errors in pipelined analog-to-digital converters (ADCs). The algorithm employs a fuzzy controller, which is designed by analyzing the relationship between the sub-ADC quantization codes of the pipelined ADCs and the corresponding errors. The fuzzy rule base is initialized in two-stage and dynamically updated during runtime, thereby fully leveraging the fitting capabilities of the fuzzy controller. The adoption of a symmetric structure for the fuzzy rule base has been shown to reduce the quantity of rules by half, thereby simplifying structural complexity and accelerating the construction process. The fuzzy control is implemented in Xilinx Kintex-7 FPGA and applied to the online calibration of a 14-bit 61 MS/s pipelined ADC. The simulation results demonstrate that the SNDR is enhanced by 29.4 dB and SFDR is improved by 40.3 dB after calibration. Furthermore, the construction of the fuzzy rule base requires only 1,000 samples to complete.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106748"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and analysis of an ultra-wideband quad-mode quad-core oscillator with mode ambiguity elimination 一种模式模糊消除的超宽带四模四核振荡器设计与分析
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-10 DOI: 10.1016/j.mejo.2025.106767
Ge Wang , Ruixue Ding , Dingtao Zeng , Feng Bu , Yuan Gao , Depeng Sun , Shubin Liu
{"title":"Design and analysis of an ultra-wideband quad-mode quad-core oscillator with mode ambiguity elimination","authors":"Ge Wang ,&nbsp;Ruixue Ding ,&nbsp;Dingtao Zeng ,&nbsp;Feng Bu ,&nbsp;Yuan Gao ,&nbsp;Depeng Sun ,&nbsp;Shubin Liu","doi":"10.1016/j.mejo.2025.106767","DOIUrl":"10.1016/j.mejo.2025.106767","url":null,"abstract":"<div><div>This paper designs and analyzes an ultra-wideband, quad-mode, quad-core voltage-controlled oscillator with effective mode ambiguity elimination. The proposed transformer architecture simultaneously achieves four distinct inductance values, enabling quad-mode outputs through magnetic and electric couplings and a splitting inductor. Furthermore, the integration of switchable G<sub>m</sub> arrays and latch-up switches effectively resolves the mode ambiguity issue and significantly reduces circuit complexity. Implemented in a 65 nm CMOS process, the proposed VCO covers a tuning range of 91.3 % spanning from 8.08 GHz to 21.65 GHz. Phase noise at a 1 MHz offset ranges from −109.9 dBc/Hz to −120.8 dBc/Hz, and the FoM<sub>T</sub> variation at 10 MHz varies between 206.6 dBc/Hz and 209.3 dBc/Hz. To the best of the authors’ knowledge, this is the first work to address and eliminate mode ambiguity in quad-core, quad-mode VCOs.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106767"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2 MHz-BW 80.6 dB-SNDR 95.9 dB-SFDR 2nd-order noise-shaping SAR using open-loop Gm-R amplifier 采用开环Gm-R放大器的2 MHz-BW 80.6 dB-SNDR 95.9 dB-SFDR二阶噪声整形SAR
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-10 DOI: 10.1016/j.mejo.2025.106749
Hao Xu , Congyang Sun , Shuai Liu , Guoyu Li , Yechen Tian , Na Yan
{"title":"A 2 MHz-BW 80.6 dB-SNDR 95.9 dB-SFDR 2nd-order noise-shaping SAR using open-loop Gm-R amplifier","authors":"Hao Xu ,&nbsp;Congyang Sun ,&nbsp;Shuai Liu ,&nbsp;Guoyu Li ,&nbsp;Yechen Tian ,&nbsp;Na Yan","doi":"10.1016/j.mejo.2025.106749","DOIUrl":"10.1016/j.mejo.2025.106749","url":null,"abstract":"<div><div>This work presents a noise-shaping successive-approximation-register (NS-SAR) ADC employing an open-loop Gm-R amplifier. Within the adopted cascaded integrator feed-forward (EF-CIFF) architecture with sampling kT/C noise cancellation, higher speed operation is enabled by the Gm-R amplifier as it simplifies timing control and does not require gain calibration. The quantizer uses 8-bit quantization depth, which is the theoretical optimum quantitatively estimated for the targeted 80 dB signal-to-noise-distortion ratio (SNDR). Fabricated in a 28 nm CMOS process, the prototype NS-SAR ADC operating at 50 MS/s sampling rate achieves 80.6 dB SNDR over a 2 MHz bandwidth with an oversampling ratio (OSR) of 12.5. It occupies 0.026 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span> with a total power consumption of 1.275 mW at 1 V supply, resulting in a Schreier figure-of-merits (FoMs) of 172.6 dB.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106749"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of leakage mechanisms in Fully Depleted Silicon-on-Insulator (FD SOI) devices 全耗尽绝缘体上硅(FD SOI)器件泄漏机理分析
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-10 DOI: 10.1016/j.mejo.2025.106769
Manoj Kumar Paramasivam
{"title":"Analysis of leakage mechanisms in Fully Depleted Silicon-on-Insulator (FD SOI) devices","authors":"Manoj Kumar Paramasivam","doi":"10.1016/j.mejo.2025.106769","DOIUrl":"10.1016/j.mejo.2025.106769","url":null,"abstract":"<div><div>Silicon-on-insulator (SOI) devices can be effective for low power &amp; high switching applications and thus prove valuable for next generation technology. The low substrate leakage, due to body isolation by the buried oxide layer, is primarily advantageous. But other leakage mechanisms dominate the leakage current for SOI at higher drain voltages. The conventional drift diffusion transport cannot predict these leakage effects. This paper analyzes the leakage mechanisms using energy balance models to predict non local effects and lattice heating that cause band to band tunneling and how it's affected by drain voltage variation at sub threshold gate voltages.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106769"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 76.05 dB SNDR 0.303 mW Noise-Shaping SAR ADC with data weighted averaging in 40 nm CMOS 基于40 nm CMOS的76.05 dB SNDR 0.303 mW降噪SAR ADC
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-10 DOI: 10.1016/j.mejo.2025.106750
Zhijie Yang, Jie Sun
{"title":"A 76.05 dB SNDR 0.303 mW Noise-Shaping SAR ADC with data weighted averaging in 40 nm CMOS","authors":"Zhijie Yang,&nbsp;Jie Sun","doi":"10.1016/j.mejo.2025.106750","DOIUrl":"10.1016/j.mejo.2025.106750","url":null,"abstract":"<div><div>This paper presents a noise-shaping successive approximation register (SAR) analog-to-digital converter (ADC) utilizing dynamic amplifiers and data-weighted averaging (DWA) techniques. The noise-shaping is achieved by combining finite impulse response (FIR) and infinite impulse response (IIR) filters. Dynamic amplifiers replace traditional operational transconductance amplifiers to reduce power consumption. A bidirectional-select DWA technique is proposed to address capacitor mismatch issues in 3 MSBs. The prototype chip, fabricated in a 40 nm CMOS process, operates at a voltage of 1.1 V with a sampling rate of 5 MS/s, consuming 303.2 <span><math><mi>μ</mi></math></span>W of power. With an oversampling ratio (OSR) of 8, the noise-shaping SAR ADC achieves a peak Schreier figure of merit (FOM) of 166.2 dB and a signal-to-noise and distortion ratio (SNDR) of 76.05 dB.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106750"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A transformer-based current reuse CMOS Armstrong VCO using gm-boosted technique 一种基于变压器的电流复用CMOS阿姆斯阿姆斯特朗压控振荡器
IF 1.9 3区 工程技术
Microelectronics Journal Pub Date : 2025-06-09 DOI: 10.1016/j.mejo.2025.106753
Tao Tan, Xiuping Li, Yubing Li, Shuai Wu, Bohai Fang, Changkai Zhang, Yujian Qin
{"title":"A transformer-based current reuse CMOS Armstrong VCO using gm-boosted technique","authors":"Tao Tan,&nbsp;Xiuping Li,&nbsp;Yubing Li,&nbsp;Shuai Wu,&nbsp;Bohai Fang,&nbsp;Changkai Zhang,&nbsp;Yujian Qin","doi":"10.1016/j.mejo.2025.106753","DOIUrl":"10.1016/j.mejo.2025.106753","url":null,"abstract":"<div><div>This paper presents a low power LC Armstrong VCO based on current reuse structure and <span><math><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span>-boosted technique with a 5-port 3-coil transformer. The applied current reuse structure converts the traditional parallel cross-coupled transistor pair into a series PMOS-NMOS pair, reducing the overall power consumption. Moreover, the phase-shifted between <span><math><msub><mrow><mi>i</mi></mrow><mrow><mi>d</mi><mi>s</mi></mrow></msub></math></span> and <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>d</mi><mi>s</mi></mrow></msub></math></span> of the transistors reduces power dissipated in the devices by leveraging the large language model optimization results. The proposed <span><math><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span>-boosted technique is employed by two transistors in series and capacitors in parallel. With the proposed topology, the negative conductance, oscillation amplitude, and the Perturbation Projection Vector (PPV) are improved, thus better phase noise performance. The 5-port 3-coil transformer integrates all inductors to minimizing the area. Fabricated in GlobalFoundries 0.11-<span><math><mi>μ</mi></math></span>m CMOS technology, the VCO achieves a power consumption of 2 mW at a 1.2 V supply voltage, with a phase noise of −114.5 dBc/Hz @1MHz offset at 11.2 GHz.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106753"},"PeriodicalIF":1.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信