Zhenbei Li, Nan Guo, Huanhuan Guan, Jian Zhang, Qiuze Yu
{"title":"E-band T/R MMIC for 5G millimeter wave applications","authors":"Zhenbei Li, Nan Guo, Huanhuan Guan, Jian Zhang, Qiuze Yu","doi":"10.1016/j.mejo.2025.106758","DOIUrl":"10.1016/j.mejo.2025.106758","url":null,"abstract":"<div><div>This paper presents a T/R MMIC operating in the 66–76 GHz frequency range, designed utilizing 0.10-<span><math><mi>μ</mi></math></span>m GaAs pHEMT technology. In transmit (Tx) mode, a four-stage cascaded power amplifier with a four-way power combining architecture is implemented, utilizing T-junctions and a Lange coupler for efficient power synthesis. A compact bus-fed power supply structure is adopted to minimize chip area. In receive (Rx) mode, a four-stage cascaded low-noise amplifier (LNA) is integrated with a compact size. A low insertion loss single-pole double-throw (SPDT) switch with a parallel structure enables Tx/Rx switching and exhibits high power-handling capability. Measurement results indicate that the T/R MMIC achieves a gain of 15.7–16.2 dB and an output 1 dB compression point (OP1 dB) of 17.3–19.2 dBm in Tx mode. In Rx mode, the circuit provides a gain of 18.9–21.2 dB with a noise figure ranging from 6.5 dB to 7.5 dB. Occupying a compact size of 2.3 ×2.8 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>, the proposed MMIC demonstrates strong potential for 5G millimeter wave applications.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106758"},"PeriodicalIF":1.9,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144313787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei Zou , Jionghui Zhang , Zhengwang Cheng , Mei Wang , Li Zhang , Xuecheng Zou
{"title":"Design and analysis of a ring-VCO based low jitter PLL","authors":"Wei Zou , Jionghui Zhang , Zhengwang Cheng , Mei Wang , Li Zhang , Xuecheng Zou","doi":"10.1016/j.mejo.2025.106771","DOIUrl":"10.1016/j.mejo.2025.106771","url":null,"abstract":"<div><div>A fully integrated low jitter phase-locked loop (PLL) with a ring voltage-controlled oscillator (ring-VCO) is fabricated using a SMIC 0.13 μm CMOS technology. The design of low jitter PLLs and the relationship between phase noise and integrated RMS jitter are investigated via theoretical analysis and verified by experiments. A differential ring-VCO and charge pump (CP) are proposed to mitigate the common-mode noise generated by the substrate, power supply, and control lines. The designs of ring-VCO and CP are optimized to reduce out-band and in-band phase noises of PLL, respectively. A measured integrated RMS jitter of 4.48 ps is realized at 480 MHz output and a phase noise of −128.1 dBc/Hz is achieved at 20 MHz offset. The PLL consumes 7.3 mA from a 3.3 V supply, with a die occupation of 430 μm × 820 μm.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106771"},"PeriodicalIF":1.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144280880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A PLL-based capacitance-to-voltage (C-to-V) converter for permittivity measurement sensors","authors":"Surya Varchasvi Devaraj , Reddygari Bhupal Dheeraj , Khalid Shaikh, Parth Makode, Monika, Laxmeesha Somappa, Maryam Shojaei Baghini","doi":"10.1016/j.mejo.2025.106754","DOIUrl":"10.1016/j.mejo.2025.106754","url":null,"abstract":"<div><div>A fully integrated sensing system is proposed for a wide-band capacitive-to-voltage converter (C2V). The system utilizes a differential delay cell voltage-controlled oscillator (VCO) incorporated in a phase-locked loop (PLL). The PLL controls the VCO operation frequency, and the PLL’s control voltage varies with the capacitance across the VCO. This control voltage is sensed to extract the capacitance and the corresponding permittivity. In comparison to the existing techniques, the proposed PLL C2V converter offers digital programmability with a wide operating frequency of 0.1 GHz–1 GHz, a low power consumption of 9.78 mW, a 20 ms response time, and a capacitance range of 0.3 pF–30 pF with an offset of 4.5 pF. The fully integrated PLL C2V converter is fabricated in 65 nm MM CMOS and occupies 0.0173 <span><math><msup><mrow><mi>mm</mi></mrow><mrow><mn>2</mn></mrow></msup></math></span> of active area. The PLL C2V converter is tested with a digitally tunable RF capacitor PE64102 emulating the sensor capacitor and can accurately measure capacitance with an error of <span><math><mo>±</mo></math></span> <span><math><mrow><mi>1.98</mi><mtext>%</mtext></mrow></math></span>. The PLL C2V ASIC is further integrated with a capacitive soil moisture sensor and is demonstrated for soil moisture sensing applications. The soil moisture measurements with the proposed system showed it can accurately estimate the moisture content with an error of −1.08% to 2.51%.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106754"},"PeriodicalIF":1.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144313788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Beiqi Duan , Junyan Bi , Hao Xu , Guoyu Li , Yechen Tian , Na Yan
{"title":"A 12-bit 2GS/s current-steering DAC with 27 mW power consumption in 28 nm CMOS","authors":"Beiqi Duan , Junyan Bi , Hao Xu , Guoyu Li , Yechen Tian , Na Yan","doi":"10.1016/j.mejo.2025.106756","DOIUrl":"10.1016/j.mejo.2025.106756","url":null,"abstract":"<div><div>This paper presents a 12-bit, 2GS/s current-steering digital-to-analog converter (DAC) implemented in 28 nm Bulk CMOS technology for high data rate wireless communication. The analysis of noise sources determines the minimum current required for the circuit. The major distortion mechanisms are analyzed to derive a design strategy for maximum linearity. A 5-4-3 segmented architecture is utilized to improve linearity, and a hierarchical switching scheme sequence is adopted to overcome the gradient error of the current arrays. Measurements show that the DAC achieves an SFDR<span><math><mo>></mo></math></span>80dBc at low frequency and an SFDR<span><math><mo>></mo></math></span>53dBc up to 500 MHz. This DAC achieves an IMD<span><math><mo><</mo></math></span>-80dBc at low frequency and an IMD<span><math><mo><</mo></math></span>-53dBc up to 500 MHz with a total power consumption of 27 mW at 1 V supply.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106756"},"PeriodicalIF":1.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144308071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Research on fuzzy control based background calibration of pipelined ADCs","authors":"Luotian Wu, Honghui Deng, Jiashen Li, Muqi Li, Long Li, Runhui Chen, Yongsheng Yin","doi":"10.1016/j.mejo.2025.106748","DOIUrl":"10.1016/j.mejo.2025.106748","url":null,"abstract":"<div><div>This article proposes a rapid and novel background calibration algorithm employing fuzzy control to address nonlinear errors in pipelined analog-to-digital converters (ADCs). The algorithm employs a fuzzy controller, which is designed by analyzing the relationship between the sub-ADC quantization codes of the pipelined ADCs and the corresponding errors. The fuzzy rule base is initialized in two-stage and dynamically updated during runtime, thereby fully leveraging the fitting capabilities of the fuzzy controller. The adoption of a symmetric structure for the fuzzy rule base has been shown to reduce the quantity of rules by half, thereby simplifying structural complexity and accelerating the construction process. The fuzzy control is implemented in Xilinx Kintex-7 FPGA and applied to the online calibration of a 14-bit 61 MS/s pipelined ADC. The simulation results demonstrate that the SNDR is enhanced by 29.4 dB and SFDR is improved by 40.3 dB after calibration. Furthermore, the construction of the fuzzy rule base requires only 1,000 samples to complete.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106748"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ge Wang , Ruixue Ding , Dingtao Zeng , Feng Bu , Yuan Gao , Depeng Sun , Shubin Liu
{"title":"Design and analysis of an ultra-wideband quad-mode quad-core oscillator with mode ambiguity elimination","authors":"Ge Wang , Ruixue Ding , Dingtao Zeng , Feng Bu , Yuan Gao , Depeng Sun , Shubin Liu","doi":"10.1016/j.mejo.2025.106767","DOIUrl":"10.1016/j.mejo.2025.106767","url":null,"abstract":"<div><div>This paper designs and analyzes an ultra-wideband, quad-mode, quad-core voltage-controlled oscillator with effective mode ambiguity elimination. The proposed transformer architecture simultaneously achieves four distinct inductance values, enabling quad-mode outputs through magnetic and electric couplings and a splitting inductor. Furthermore, the integration of switchable G<sub>m</sub> arrays and latch-up switches effectively resolves the mode ambiguity issue and significantly reduces circuit complexity. Implemented in a 65 nm CMOS process, the proposed VCO covers a tuning range of 91.3 % spanning from 8.08 GHz to 21.65 GHz. Phase noise at a 1 MHz offset ranges from −109.9 dBc/Hz to −120.8 dBc/Hz, and the FoM<sub>T</sub> variation at 10 MHz varies between 206.6 dBc/Hz and 209.3 dBc/Hz. To the best of the authors’ knowledge, this is the first work to address and eliminate mode ambiguity in quad-core, quad-mode VCOs.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106767"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hao Xu , Congyang Sun , Shuai Liu , Guoyu Li , Yechen Tian , Na Yan
{"title":"A 2 MHz-BW 80.6 dB-SNDR 95.9 dB-SFDR 2nd-order noise-shaping SAR using open-loop Gm-R amplifier","authors":"Hao Xu , Congyang Sun , Shuai Liu , Guoyu Li , Yechen Tian , Na Yan","doi":"10.1016/j.mejo.2025.106749","DOIUrl":"10.1016/j.mejo.2025.106749","url":null,"abstract":"<div><div>This work presents a noise-shaping successive-approximation-register (NS-SAR) ADC employing an open-loop Gm-R amplifier. Within the adopted cascaded integrator feed-forward (EF-CIFF) architecture with sampling kT/C noise cancellation, higher speed operation is enabled by the Gm-R amplifier as it simplifies timing control and does not require gain calibration. The quantizer uses 8-bit quantization depth, which is the theoretical optimum quantitatively estimated for the targeted 80 dB signal-to-noise-distortion ratio (SNDR). Fabricated in a 28 nm CMOS process, the prototype NS-SAR ADC operating at 50 MS/s sampling rate achieves 80.6 dB SNDR over a 2 MHz bandwidth with an oversampling ratio (OSR) of 12.5. It occupies 0.026 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span> with a total power consumption of 1.275 mW at 1 V supply, resulting in a Schreier figure-of-merits (FoMs) of 172.6 dB.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106749"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of leakage mechanisms in Fully Depleted Silicon-on-Insulator (FD SOI) devices","authors":"Manoj Kumar Paramasivam","doi":"10.1016/j.mejo.2025.106769","DOIUrl":"10.1016/j.mejo.2025.106769","url":null,"abstract":"<div><div>Silicon-on-insulator (SOI) devices can be effective for low power & high switching applications and thus prove valuable for next generation technology. The low substrate leakage, due to body isolation by the buried oxide layer, is primarily advantageous. But other leakage mechanisms dominate the leakage current for SOI at higher drain voltages. The conventional drift diffusion transport cannot predict these leakage effects. This paper analyzes the leakage mechanisms using energy balance models to predict non local effects and lattice heating that cause band to band tunneling and how it's affected by drain voltage variation at sub threshold gate voltages.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106769"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 76.05 dB SNDR 0.303 mW Noise-Shaping SAR ADC with data weighted averaging in 40 nm CMOS","authors":"Zhijie Yang, Jie Sun","doi":"10.1016/j.mejo.2025.106750","DOIUrl":"10.1016/j.mejo.2025.106750","url":null,"abstract":"<div><div>This paper presents a noise-shaping successive approximation register (SAR) analog-to-digital converter (ADC) utilizing dynamic amplifiers and data-weighted averaging (DWA) techniques. The noise-shaping is achieved by combining finite impulse response (FIR) and infinite impulse response (IIR) filters. Dynamic amplifiers replace traditional operational transconductance amplifiers to reduce power consumption. A bidirectional-select DWA technique is proposed to address capacitor mismatch issues in 3 MSBs. The prototype chip, fabricated in a 40 nm CMOS process, operates at a voltage of 1.1 V with a sampling rate of 5 MS/s, consuming 303.2 <span><math><mi>μ</mi></math></span>W of power. With an oversampling ratio (OSR) of 8, the noise-shaping SAR ADC achieves a peak Schreier figure of merit (FOM) of 166.2 dB and a signal-to-noise and distortion ratio (SNDR) of 76.05 dB.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106750"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A transformer-based current reuse CMOS Armstrong VCO using gm-boosted technique","authors":"Tao Tan, Xiuping Li, Yubing Li, Shuai Wu, Bohai Fang, Changkai Zhang, Yujian Qin","doi":"10.1016/j.mejo.2025.106753","DOIUrl":"10.1016/j.mejo.2025.106753","url":null,"abstract":"<div><div>This paper presents a low power LC Armstrong VCO based on current reuse structure and <span><math><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span>-boosted technique with a 5-port 3-coil transformer. The applied current reuse structure converts the traditional parallel cross-coupled transistor pair into a series PMOS-NMOS pair, reducing the overall power consumption. Moreover, the phase-shifted between <span><math><msub><mrow><mi>i</mi></mrow><mrow><mi>d</mi><mi>s</mi></mrow></msub></math></span> and <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>d</mi><mi>s</mi></mrow></msub></math></span> of the transistors reduces power dissipated in the devices by leveraging the large language model optimization results. The proposed <span><math><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span>-boosted technique is employed by two transistors in series and capacitors in parallel. With the proposed topology, the negative conductance, oscillation amplitude, and the Perturbation Projection Vector (PPV) are improved, thus better phase noise performance. The 5-port 3-coil transformer integrates all inductors to minimizing the area. Fabricated in GlobalFoundries 0.11-<span><math><mi>μ</mi></math></span>m CMOS technology, the VCO achieves a power consumption of 2 mW at a 1.2 V supply voltage, with a phase noise of −114.5 dBc/Hz @1MHz offset at 11.2 GHz.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"163 ","pages":"Article 106753"},"PeriodicalIF":1.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144270991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}