Miao Zhang , Ruidong Li , Xiaoteng Zhao , Xianting Su , Zhicheng Dong , Zekai Yang , Hongyu Su , Hongzhi Liang , Yukui Yu , Shubin Liu
{"title":"负载驱动的宽带连续时间线性均衡器电感峰值设计","authors":"Miao Zhang , Ruidong Li , Xiaoteng Zhao , Xianting Su , Zhicheng Dong , Zekai Yang , Hongyu Su , Hongzhi Liang , Yukui Yu , Shubin Liu","doi":"10.1016/j.mejo.2025.106873","DOIUrl":null,"url":null,"abstract":"<div><div>This article presents modeling and analysis of several wideband current-mode logic (CML) continuous-time linear equalizers (CTLEs), including series peaking, shunt peaking, T-coil peaking, and bridged-shunt T-coil peaking architectures. Theoretical analysis reveals the peaking gain-bandwidth product (PGBW) of each structure. The series peaking configuration achieves the highest PGBW when the parasitic capacitance <em>C</em><sub><em>D</em></sub> is comparable to the load capacitance <em>C</em><sub><em>L</em></sub>, corresponding to larger input transistor sizes. In contrast, the bridged-shunt T-coil peaking structure delivers superior PGBW performance when <em>C</em><sub><em>D</em></sub> is significantly smaller than <em>C</em><sub><em>L</em></sub>. Based on these modeling insights, an analog front-end (AFE) circuit is designed in 28-nm CMOS technology for a 112-Gb/s PAM-4 medium-reach (MR) receiver (RXs), targeting scenarios where <em>C</em><sub><em>D</em></sub> is relatively small. The proposed AFE adopts a bridged-shunt T-coil peaking structure to extend the bandwidth. Post-layout simulations demonstrate that the proposed AFE achieves a boost gain of up to 21.5-dB dissipating 43.8 mW at a 0.9-V supply, achieving larger than 28-GHz bandwidth within the area of 0.06 mm<sup>2</sup>.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"166 ","pages":"Article 106873"},"PeriodicalIF":1.9000,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Load-driven inductive peaking design for broad band continuous-time linear equalizer\",\"authors\":\"Miao Zhang , Ruidong Li , Xiaoteng Zhao , Xianting Su , Zhicheng Dong , Zekai Yang , Hongyu Su , Hongzhi Liang , Yukui Yu , Shubin Liu\",\"doi\":\"10.1016/j.mejo.2025.106873\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This article presents modeling and analysis of several wideband current-mode logic (CML) continuous-time linear equalizers (CTLEs), including series peaking, shunt peaking, T-coil peaking, and bridged-shunt T-coil peaking architectures. Theoretical analysis reveals the peaking gain-bandwidth product (PGBW) of each structure. The series peaking configuration achieves the highest PGBW when the parasitic capacitance <em>C</em><sub><em>D</em></sub> is comparable to the load capacitance <em>C</em><sub><em>L</em></sub>, corresponding to larger input transistor sizes. In contrast, the bridged-shunt T-coil peaking structure delivers superior PGBW performance when <em>C</em><sub><em>D</em></sub> is significantly smaller than <em>C</em><sub><em>L</em></sub>. Based on these modeling insights, an analog front-end (AFE) circuit is designed in 28-nm CMOS technology for a 112-Gb/s PAM-4 medium-reach (MR) receiver (RXs), targeting scenarios where <em>C</em><sub><em>D</em></sub> is relatively small. The proposed AFE adopts a bridged-shunt T-coil peaking structure to extend the bandwidth. Post-layout simulations demonstrate that the proposed AFE achieves a boost gain of up to 21.5-dB dissipating 43.8 mW at a 0.9-V supply, achieving larger than 28-GHz bandwidth within the area of 0.06 mm<sup>2</sup>.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":\"166 \",\"pages\":\"Article 106873\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239125003224\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125003224","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Load-driven inductive peaking design for broad band continuous-time linear equalizer
This article presents modeling and analysis of several wideband current-mode logic (CML) continuous-time linear equalizers (CTLEs), including series peaking, shunt peaking, T-coil peaking, and bridged-shunt T-coil peaking architectures. Theoretical analysis reveals the peaking gain-bandwidth product (PGBW) of each structure. The series peaking configuration achieves the highest PGBW when the parasitic capacitance CD is comparable to the load capacitance CL, corresponding to larger input transistor sizes. In contrast, the bridged-shunt T-coil peaking structure delivers superior PGBW performance when CD is significantly smaller than CL. Based on these modeling insights, an analog front-end (AFE) circuit is designed in 28-nm CMOS technology for a 112-Gb/s PAM-4 medium-reach (MR) receiver (RXs), targeting scenarios where CD is relatively small. The proposed AFE adopts a bridged-shunt T-coil peaking structure to extend the bandwidth. Post-layout simulations demonstrate that the proposed AFE achieves a boost gain of up to 21.5-dB dissipating 43.8 mW at a 0.9-V supply, achieving larger than 28-GHz bandwidth within the area of 0.06 mm2.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.