一个56 Gb/s的PAM4斜率采样CDR,带同步四输出相位插值器

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zekai Yang , Xiaoteng Zhao , Huajin Sun , Xianting Su , Zhicheng Dong , Yilong Dong , Yukui Yu , Hongzhi Liang , Shubin Liu
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引用次数: 0

摘要

本文提出了一种56 Gb/s四分之一速率四电平脉冲幅度调制(PAM4)时钟和数据恢复(CDR)电路。所提出的斜率采样相位检测器(PD)将数据采样点的斜率与3位输入模式序列相结合,在每单位间隔(UI)仅使用4个比较器的情况下,实现了7/16的优越相位检测概率。此外,提出了一种能够同时产生四相正交时钟的相位插补器(PI),作为一种高线性、紧凑的多相时钟发生器(MPCG)。基于28纳米CMOS工艺,该架构在56 Gb/s输入数据速率下的能量效率为0.36 pJ/bit。在误码率(BER)为<;10−12时,模拟的抖动容限超过0.4 UIpp @ 50 MHz,而恢复的7 GHz时钟的均方根抖动(RMS)为683.4 fs。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 56 Gb/s PAM4 slope-sampling CDR with simultaneous four-output phase interpolator
This article presents a 56 Gb/s quarter-rate four-level pulse-amplitude modulation (PAM4) clock and data recovery (CDR) circuit. The proposed slope-sampling phase detector (PD) combines the slope of the data sampling point with 3-bit input pattern sequence to achieve a superior phase-detection probability of 7/16 while utilizing only four comparators per unit interval (UI). Additionally, a phase interpolator (PI) capable of simultaneously generating four-phase orthogonal clocks is proposed, serving as a high linearity, compact multiphase clock generator (MPCG). Based on 28 nm CMOS process, the architecture demonstrates an energy efficiency of 0.36 pJ/bit at 56 Gb/s input data rate from post-layout simulations. The simulated jitter tolerance at the bit error rate (BER) of <10−12 exceeds 0.4 UIpp @ 50 MHz, while the root mean square (RMS) jitter of the recovered 7 GHz clock is 683.4 fs.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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