一种用于氮化镓降压变换器的具有自适应正dV/dt噪声抑制的高速电平移位器

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Chengzhi Xu , Peiyuan Fu , Gefu Wang , Xufeng Liao , Lianxi Liu
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引用次数: 0

摘要

电平移位器在高频开关模式电源(SMPS)中起着至关重要的作用。在基于gan的SMPS系统中,交换节点经历快速转换,两个关键参数决定了电平移位器的性能:传播延迟和共模瞬态抗扰度。虽然改进CMTI的传统方法通常使用噪声滤波器,但这些解决方案通常会引入大量的传播延迟。为了解决这一限制,我们提出了一种具有自适应正dv/dt噪声消声器的高速电平移位器设计。该解决方案基于转换器的工作原理,在不影响延迟性能的情况下,在快速切换转换期间有效地阻断噪声路径。在0.18 μm双极cmos - dmos (BCD)工艺中实现,仿真和测量结果表明,在浮动电压50 V时,CMTI的延迟为0.937 ns, dV/dt为400 V/ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high-speed level shifter with adaptive positive dV/dt noise blanker for GaN-based buck converters
—Level shifters play a crucial role in high-frequency switched-mode power supplies (SMPS). In GaN-based SMPS systems where switching nodes experience rapid transitions, two critical parameters determine level shifter performance: propagation delay and common-mode transient immunity (CMTI). While conventional approaches to improve CMTI typically employ noise filters, these solutions often introduce substantial propagation delays. To address this limitation, we present a high-speed level shifter design featuring an adaptive positive dv/dt noise blanker. This solution operates based on the converter's working principle, effectively blocking noise paths during fast switching transitions without compromising delay performance. Implemented in 0.18 μm Bipolar-CMOS-DMOS (BCD) process, the simulation and measurement results of the proposed design show a delay of 0.937 ns and 400 V/ns of dV/dt CMTI at floating voltage 50 V.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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