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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs gan基垂直沟槽mosfet阈值电压滞回特性研究
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581937
S. Murata, M. Sasada, J. Asubar, H. Tokuda, K. Ueno, M. Edo, M. Kuzuhara
{"title":"Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs","authors":"S. Murata, M. Sasada, J. Asubar, H. Tokuda, K. Ueno, M. Edo, M. Kuzuhara","doi":"10.1109/IMFEDK.2018.8581937","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581937","url":null,"abstract":"In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+ -GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123280352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of Corundum-Structured Gallium Oxide Power Devices by MIST EPITAXY® 采用MIST外延技术开发刚玉结构氧化镓功率器件
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581954
T. Shinohe
{"title":"Development of Corundum-Structured Gallium Oxide Power Devices by MIST EPITAXY®","authors":"T. Shinohe","doi":"10.1109/IMFEDK.2018.8581954","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581954","url":null,"abstract":"Corundum-structured Ga203 is a new candidate for next-generation power device materials due to its excellent physical properties. Thin film SBDs with extremely low specific on-resistance of 0.1 m Ωcm2(breakdown voltage 531 V) were successfully fabricated using MIST EPITAXY® technology.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123674415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Hf Oxide Film Sputtering Condition Dependence of Ti/HfOx/Pt Resistive Random Access Memory Ti/HfOx/Pt电阻式随机存取存储器的Hf氧化膜溅射条件依赖性
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581974
°A. Azuma, R. Nakajima, H. Yoshida, T. Shimizu, T. Ito, S. Shingubara
{"title":"Hf Oxide Film Sputtering Condition Dependence of Ti/HfOx/Pt Resistive Random Access Memory","authors":"°A. Azuma, R. Nakajima, H. Yoshida, T. Shimizu, T. Ito, S. Shingubara","doi":"10.1109/IMFEDK.2018.8581974","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581974","url":null,"abstract":"We studied Ti/HfOx/Pt ReRAM device switching characteristics as a function of Hf02 sputtering condition. Hf02 films were formed with DC reactive sputtering at various (O2/ Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switching was obtained at (O2/ Ar) flow ratio of 2.0. It is suggested that good switching characteristic is obtained for the device with the Hf02 film of moderate oxygen vacancy concentration.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116346640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Penetration Depth of Effects of Irradiation of Ar Fast Atom Beams in n-Si Surfaces 氩快原子束辐照对n-Si表面穿透深度的影响
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581950
Y. Matsumoto, S. Hisamoto, J. Liang, N. Shigekawa
{"title":"Penetration Depth of Effects of Irradiation of Ar Fast Atom Beams in n-Si Surfaces","authors":"Y. Matsumoto, S. Hisamoto, J. Liang, N. Shigekawa","doi":"10.1109/IMFEDK.2018.8581950","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581950","url":null,"abstract":"Characteristics of damages in n-Si due to irradiation of Ar fast atom beams (F AB) are examined. Their penetration depth is estimated to be ≈ 50 nm by analyzing current-voltage characteristics of n-Si Schottky barrier diodes that are fabricated on wet-etched surfaces after irradiation of Ar F AB.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124168339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Effect of Hf Layer Thickness on Ti/Hf/HfO 2/Au ReRAM Device Hf层厚度对Ti/Hf/HfO /Au ReRAM器件影响的研究
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581952
R. Nakajima, A. Azuma, H. Yoshida, Tomohiro Shimizu, T. Ito, S. Shingubara
{"title":"Study on Effect of Hf Layer Thickness on Ti/Hf/HfO 2/Au ReRAM Device","authors":"R. Nakajima, A. Azuma, H. Yoshida, Tomohiro Shimizu, T. Ito, S. Shingubara","doi":"10.1109/IMFEDK.2018.8581952","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581952","url":null,"abstract":"Resistive random access memory (ReRAM) devices with a Hf02 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/Hf02/Au ReRAM device. It is suggested that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127740839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multilayer Cross-Point Device Using IGZO as Synapses in Artificial Neural Networks 利用IGZO作为人工神经网络突触的多层交叉点器件
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581976
Atsushi Kondc, M. Kimura, T. Matsuda
{"title":"Multilayer Cross-Point Device Using IGZO as Synapses in Artificial Neural Networks","authors":"Atsushi Kondc, M. Kimura, T. Matsuda","doi":"10.1109/IMFEDK.2018.8581976","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581976","url":null,"abstract":"We have developed a multilayer cross-point device using In-Ga-Zn-O semiconductor for synapse elements. There are 200 synapses on a glass substrates. We evaluate the change in the current value of the synapse. The current value gradually degrades by flowing current. The characteristic is available for modified Hebban learning.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126259306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Variations Among Heart Rate Varibility of Pulse Waves Simulataneously Measured at Different Sites 不同部位同时测量脉搏波心率变异性的变化
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581958
J. Hayano, Kento Yamamoto, Hiroki Ogasawara, E. Yuda, Y. Yoshida
{"title":"Variations Among Heart Rate Varibility of Pulse Waves Simulataneously Measured at Different Sites","authors":"J. Hayano, Kento Yamamoto, Hiroki Ogasawara, E. Yuda, Y. Yoshida","doi":"10.1109/IMFEDK.2018.8581958","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581958","url":null,"abstract":"Although pulse wave (PW) is widely used for assessing heart rate variability (HRV) with wearable devices, the variations intrinsically existing in HRV assessment by this method are unknown. This study examined variations among HRV indices obtained from PWs simultaneously measured at four different sites (right and left wrists and forearms) and compared them with those assessed from R-R intervals of electrocardiogram (ECG). While mean interbeat intervals showed good consistency with small inter-site variation (coefficient of variation [CV], 0.8% and 0.5% for supine and sitting positions) and modest deviation from that assessed from ECG (coefficient of deviation [CD], 3.1 % and 2.0%), low and high frequency components of HRV showed non-negligible inconsistency with large inter-site variations (CV, 4.0% and 3.8% for supine and 3.6% and 4.7% for sitting) and deviations from those with ECG (CD, 29.3% and 51.3% for supine and 18.5% and 40.2% for sitting).","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132072048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of Ga-Sn-O Thermoelectric Device Ga-Sn-O热电器件的评价
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581963
Yoku Ikeguchi, Kota Imanishi, Ryuki Nomura, M. Kimura, K. Umeda, M. Uenuma
{"title":"Evaluation of Ga-Sn-O Thermoelectric Device","authors":"Yoku Ikeguchi, Kota Imanishi, Ryuki Nomura, M. Kimura, K. Umeda, M. Uenuma","doi":"10.1109/IMFEDK.2018.8581963","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581963","url":null,"abstract":"A thermoelectric conversion element is a device for converting thermal energy into electric energy. Many thermoelectric materials are toxic and contain rare-metals. Thus we have evaluated thermoelectric effect of Ga-Sn-O (GTO) that is rare-metal free and less toxic. Moreover, how the annealing treatment affects the characteristics. As a result, the power factor was improved by annealing treatment, where the Seebeck coefficient is −284 µ V /K and the power factor is 0.031 mW/mK<sup>2</sup> at Ar:O<inf>2</inf> = 20:4 sccm. On the other hand, the carrier density measured using van der Pauw method is 2.25×10<sup>20</sup> /cm<sup>3</sup> and Hall mobility is 0.88 cm<sup>2</sup>/Vs.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128659028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduced Current Collapse in AIGaN/GaN HEMTs with p-GaN Layer in Gate-Drain Access Region 在栅极-漏极通路中添加p-GaN层的AIGaN/GaN hemt降低了电流坍塌
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581943
T. Ozawa, J. Asubar, H. Tokuda, M. Kuzuhara
{"title":"Reduced Current Collapse in AIGaN/GaN HEMTs with p-GaN Layer in Gate-Drain Access Region","authors":"T. Ozawa, J. Asubar, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2018.8581943","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581943","url":null,"abstract":"For the purpose of reducing current collapse, we have studied a special structure of an AIGaN/GaN HEMT, in which an isolated p-GaN layer is located in the gate-drain access region. An addition of an isolated p-GaN layer resulted in significant suppression in current collapse by 98 %, as compared to the conventional HEMT. It was also found that current collapse was more effectively suppressed when the p-GaN region was located closer to the gate.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-Mobility Single-Crystalline WO3 Epiaxial Films Grown on LSAT Substrates 在LSAT衬底上生长的高迁移率单晶WO3外轴薄膜
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581977
H. Mito, Ryota Nakamura, K. Koike, S. Sasa, M. Yano, Shintaro Kobayashi, K. Inaba
{"title":"High-Mobility Single-Crystalline WO3 Epiaxial Films Grown on LSAT Substrates","authors":"H. Mito, Ryota Nakamura, K. Koike, S. Sasa, M. Yano, Shintaro Kobayashi, K. Inaba","doi":"10.1109/IMFEDK.2018.8581977","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581977","url":null,"abstract":"MBE growth of WO<inf>3</inf> on (100) LSAT substrates is reported. It is revealed that the initial WO<inf>3</inf> layer crystallizes in the cubic WO<inf>3</inf> structure although the lattice constant in the growth direction is shrunken due to the coherent growth. This cubic structure is relaxed and becomes close to the orthorhombic WO<inf>3</inf> structure with increasing thickness. The electron mobility in a 5 nm thick film was as large as 560 cm<sup>2</sup>/Vs while it decreased to the typical vale of bulk crystals of about 10 cm<sup>2</sup>/Vs in the thicker films more than 30 nm.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123843731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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