Reduced Current Collapse in AIGaN/GaN HEMTs with p-GaN Layer in Gate-Drain Access Region

Abstract

For the purpose of reducing current collapse, we have studied a special structure of an AIGaN/GaN HEMT, in which an isolated p-GaN layer is located in the gate-drain access region. An addition of an isolated p-GaN layer resulted in significant suppression in current collapse by 98 %, as compared to the conventional HEMT. It was also found that current collapse was more effectively suppressed when the p-GaN region was located closer to the gate.