Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs

Abstract

In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+ -GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.