Penetration Depth of Effects of Irradiation of Ar Fast Atom Beams in n-Si Surfaces

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581950

Y. Matsumoto, S. Hisamoto, J. Liang, N. Shigekawa

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Abstract

Characteristics of damages in n-Si due to irradiation of Ar fast atom beams (F AB) are examined. Their penetration depth is estimated to be ≈ 50 nm by analyzing current-voltage characteristics of n-Si Schottky barrier diodes that are fabricated on wet-etched surfaces after irradiation of Ar F AB.

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氩快原子束辐照对n-Si表面穿透深度的影响

研究了氩快原子束辐照下n-Si的损伤特征。通过分析Ar - F - AB辐照后在湿蚀刻表面制备的n-Si肖特基势垒二极管的电流-电压特性，估计其穿透深度约为≈50 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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