Hf Oxide Film Sputtering Condition Dependence of Ti/HfOx/Pt Resistive Random Access Memory

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581974

°A. Azuma, R. Nakajima, H. Yoshida, T. Shimizu, T. Ito, S. Shingubara

引用次数: 0

Abstract

We studied Ti/HfOx/Pt ReRAM device switching characteristics as a function of Hf02 sputtering condition. Hf02 films were formed with DC reactive sputtering at various (O2/ Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switching was obtained at (O2/ Ar) flow ratio of 2.0. It is suggested that good switching characteristic is obtained for the device with the Hf02 film of moderate oxygen vacancy concentration.

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Ti/HfOx/Pt电阻式随机存取存储器的Hf氧化膜溅射条件依赖性

我们研究了Ti/HfOx/Pt ReRAM器件开关特性与Hf02溅射条件的关系。在(O2/ Ar)流量比为0.25 ~ 2.5的条件下，采用直流反应溅射法制备了Hf02薄膜。在(O2/ Ar)流量比为2.0时，可获得最稳定的重复开关。结果表明，采用氧空位浓度适中的Hf02薄膜制备的器件具有良好的开关特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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