gan基垂直沟槽mosfet阈值电压滞回特性研究

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581937

S. Murata, M. Sasada, J. Asubar, H. Tokuda, K. Ueno, M. Edo, M. Kuzuhara

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引用次数: 1

摘要

本文研究了氮化镓源层采用不同工艺制备的氮化镓基垂直沟槽mosfet传输特性的滞后特性。研究发现，外延生长源区的器件在传输特性上比植入源区的器件更能抑制迟滞现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs

In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+ -GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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