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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Improved RF Modeling of Intrinsic Output Equivalent Circuit for HR PD-SOI MOSFETs HR PD-SOI mosfet固有输出等效电路的改进射频建模
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581942
Changjo Lee, Seonghearn Lee
{"title":"Improved RF Modeling of Intrinsic Output Equivalent Circuit for HR PD-SOI MOSFETs","authors":"Changjo Lee, Seonghearn Lee","doi":"10.1109/IMFEDK.2018.8581942","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581942","url":null,"abstract":"The low-frequency effect showing abrupt change of intrinsic output capacitance and conductance for high resistivity(HR) PD-SOI MOSFETs is well modeled using an improved RF output equivalent circuit with a series RC network. The output circuit parameters are accurately extracted by fitting frequency-dependent output capacitance and conductance equations to each measured data. The good agreements between measured and modeled Y 22 -parameter are obtained from 50 MHz to 10GHz.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127270409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Novel Design of P Implanted Regions for a Power MOSFET 功率MOSFET P植入区的新设计
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581972
Wen-Bin Yeh, Yi Su, Kung-Yen Lee, Chia-Hui Cheng, Chih-Fang Huang
{"title":"A Novel Design of P Implanted Regions for a Power MOSFET","authors":"Wen-Bin Yeh, Yi Su, Kung-Yen Lee, Chia-Hui Cheng, Chih-Fang Huang","doi":"10.1109/IMFEDK.2018.8581972","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581972","url":null,"abstract":"In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129991543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved Current Collapse in AlGaN/GaN MOS-HEMTs with Dual Field-Plates 双场极板AlGaN/GaN mos - hemt的改进电流坍缩
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581959
T. Nishitani, R. Yamaguchi, T. Yamazaki, J. Asubar, H. Tokuda, M. Kuzuhara
{"title":"Improved Current Collapse in AlGaN/GaN MOS-HEMTs with Dual Field-Plates","authors":"T. Nishitani, R. Yamaguchi, T. Yamazaki, J. Asubar, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2018.8581959","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581959","url":null,"abstract":"We fabricated AlGaN/GaN MOS-HEMTs with a dual-field-plate (FP), composed of gate-FP and source-FP. Using pulsed I-V technique, the effect of FP on current collapse was studied. Applying a high positive gate voltage resulted in current collapse suppression. It was found that the use of dual-FP was effective to significantly suppress the current collapse.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134605121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method 雾相气相沉积法制备的Ga-Sn-O薄膜热电转换装置
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581956
Tatsuya Aramaki, Ryuki Nomura, T. Matsuda, M. Kimura, K. Umeda, M. Uenuma, Y. Uraoka
{"title":"Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method","authors":"Tatsuya Aramaki, Ryuki Nomura, T. Matsuda, M. Kimura, K. Umeda, M. Uenuma, Y. Uraoka","doi":"10.1109/IMFEDK.2018.8581956","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581956","url":null,"abstract":"We proposed a GTO thin film thermoelectric conversion devise by the mist CVD method. The thermoelectric conversion devise with the best performance had a Seebeck coefficient of −193[µV/K], a conductivity of 6.35[S/cm], and a PF of 0.0179 [mW/mK2].","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133583775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2018 International Meeting for Future of Electron Devices, Kansai 2018年电子器件未来国际会议，关西
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/imfedk.2018.8581965
{"title":"2018 International Meeting for Future of Electron Devices, Kansai","authors":"","doi":"10.1109/imfedk.2018.8581965","DOIUrl":"https://doi.org/10.1109/imfedk.2018.8581965","url":null,"abstract":"","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114410666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Resistivity and Breakdown Field in Fe-Doped Semi-Insulating Gan Substrates 掺铁半绝缘Gan衬底电阻率和击穿场的表征
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581960
A. Aoai, K. Suzuki, J. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, M. Kuzuhara
{"title":"Characterization of Resistivity and Breakdown Field in Fe-Doped Semi-Insulating Gan Substrates","authors":"A. Aoai, K. Suzuki, J. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, M. Kuzuhara","doi":"10.1109/IMFEDK.2018.8581960","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581960","url":null,"abstract":"In this work, we study the breakdown electric field and resistivity of Fe-doped semi-insulating GaN substrates with various Fe doping concentrations. The substrate with Fe doping concentration of 4×10<sup>20</sup> cm<sup>−3</sup> exhibited an effective lateral breakdown field of 2 MV/cm with a resistivity of more than 10<sup>12</sup>Ωcm. It was found that increasing the Fe concentration was effective to enhance the resistivity and effective lateral breakdown electric field.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125002325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon Devices 硅设备
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/imfedk.2018.8581951
{"title":"Silicon Devices","authors":"","doi":"10.1109/imfedk.2018.8581951","DOIUrl":"https://doi.org/10.1109/imfedk.2018.8581951","url":null,"abstract":"","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129940298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Compound Devices 复合设备
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/imfedk.2018.8581979
{"title":"Compound Devices","authors":"","doi":"10.1109/imfedk.2018.8581979","DOIUrl":"https://doi.org/10.1109/imfedk.2018.8581979","url":null,"abstract":"","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129378223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of IH System with Equivalent Circuit Corresponding to Magnetic Flux 磁通等效电路IH系统分析
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581949
Shuya Matsuhashi, F. Hattori, M. Ishitobi
{"title":"Analysis of IH System with Equivalent Circuit Corresponding to Magnetic Flux","authors":"Shuya Matsuhashi, F. Hattori, M. Ishitobi","doi":"10.1109/IMFEDK.2018.8581949","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581949","url":null,"abstract":"In designing an induction heating system, the load part with magnetic field has been considered by converted to the L-R series equivalent circuit or the model with transformer. These circuit models don't correspond to the physical phenomenon of the load part, and the design guidelines of the system have not been established yet. Although there are methods of repeating electromagnetic field simulation to each application and obtaining a converged solution by trial and error, it takes lots of time and is inefficient. This paper proposes an equivalent circuit corresponding to the magnetic flux of IH load part, in order to clarify it. Moreover, a coupled analysis of electric circuit and IH load is carried out. This enables more detailed analysis of an IH load, and it was derived that high power utilization rate is realized in the parallel resonance mode by the simulation and the experiment.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116918398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heat Flow Analysis in a Thermal Hybrid Solar Cell System with Concentrating Light 聚光热混合太阳能电池系统的热流分析
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581967
Yoshihiro Watanabe, Y. Ashida, Akira Takahashi
{"title":"Heat Flow Analysis in a Thermal Hybrid Solar Cell System with Concentrating Light","authors":"Yoshihiro Watanabe, Y. Ashida, Akira Takahashi","doi":"10.1109/IMFEDK.2018.8581967","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581967","url":null,"abstract":"A thermal hybrid solar cell system is investigated using Si solar cells and concentrating optical system of a linear Fresnel lens and a parabolic mirror. Total energy usage efficiency is improved by additional mirrors and thermal insulators on the solar cells.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"308 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114415904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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