Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581956

Tatsuya Aramaki, Ryuki Nomura, T. Matsuda, M. Kimura, K. Umeda, M. Uenuma, Y. Uraoka

引用次数: 0

Abstract

We proposed a GTO thin film thermoelectric conversion devise by the mist CVD method. The thermoelectric conversion devise with the best performance had a Seebeck coefficient of −193[µV/K], a conductivity of 6.35[S/cm], and a PF of 0.0179 [mW/mK2].

查看原文本刊更多论文

雾相气相沉积法制备的Ga-Sn-O薄膜热电转换装置

提出了一种采用雾状CVD法的GTO薄膜热电转换装置。性能最佳的热电转换器件的塞贝克系数为−193[µV/K]，电导率为6.35[S/cm]， PF为0.0179 [mW/mK2]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量