HR PD-SOI mosfet固有输出等效电路的改进射频建模

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581942

Changjo Lee, Seonghearn Lee

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引用次数: 1

摘要

利用改进的射频输出等效电路和串联RC网络，很好地模拟了高电阻率(HR) PD-SOI mosfet固有输出电容和电导突变的低频效应。通过将频率相关的输出电容和电导方程拟合到每个测量数据中，精确提取输出电路参数。在50mhz ~ 10GHz范围内，y22参数的测量值与模型值吻合较好。

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Improved RF Modeling of Intrinsic Output Equivalent Circuit for HR PD-SOI MOSFETs

The low-frequency effect showing abrupt change of intrinsic output capacitance and conductance for high resistivity(HR) PD-SOI MOSFETs is well modeled using an improved RF output equivalent circuit with a series RC network. The output circuit parameters are accurately extracted by fitting frequency-dependent output capacitance and conductance equations to each measured data. The good agreements between measured and modeled Y 22 -parameter are obtained from 50 MHz to 10GHz.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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