Characterization of Resistivity and Breakdown Field in Fe-Doped Semi-Insulating Gan Substrates

Abstract

In this work, we study the breakdown electric field and resistivity of Fe-doped semi-insulating GaN substrates with various Fe doping concentrations. The substrate with Fe doping concentration of 4×10²⁰ cm⁻³ exhibited an effective lateral breakdown field of 2 MV/cm with a resistivity of more than 10¹²Ωcm. It was found that increasing the Fe concentration was effective to enhance the resistivity and effective lateral breakdown electric field.