掺铁半绝缘Gan衬底电阻率和击穿场的表征

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581960

A. Aoai, K. Suzuki, J. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, M. Kuzuhara

{"title":"掺铁半绝缘Gan衬底电阻率和击穿场的表征","authors":"A. Aoai, K. Suzuki, J. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, M. Kuzuhara","doi":"10.1109/IMFEDK.2018.8581960","DOIUrl":null,"url":null,"abstract":"In this work, we study the breakdown electric field and resistivity of Fe-doped semi-insulating GaN substrates with various Fe doping concentrations. The substrate with Fe doping concentration of 4×1020 cm−3 exhibited an effective lateral breakdown field of 2 MV/cm with a resistivity of more than 1012Ωcm. It was found that increasing the Fe concentration was effective to enhance the resistivity and effective lateral breakdown electric field.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Characterization of Resistivity and Breakdown Field in Fe-Doped Semi-Insulating Gan Substrates\",\"authors\":\"A. Aoai, K. Suzuki, J. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, M. Kuzuhara\",\"doi\":\"10.1109/IMFEDK.2018.8581960\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we study the breakdown electric field and resistivity of Fe-doped semi-insulating GaN substrates with various Fe doping concentrations. The substrate with Fe doping concentration of 4×1020 cm−3 exhibited an effective lateral breakdown field of 2 MV/cm with a resistivity of more than 1012Ωcm. It was found that increasing the Fe concentration was effective to enhance the resistivity and effective lateral breakdown electric field.\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581960\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581960","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了不同铁掺杂浓度下掺铁半绝缘GaN衬底的击穿电场和电阻率。当Fe掺杂浓度为4×1020 cm−3时，衬底的有效横向击穿场为2 MV/cm，电阻率大于1012Ωcm。结果表明，增加铁浓度可有效提高电极的电阻率和有效侧向击穿电场。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterization of Resistivity and Breakdown Field in Fe-Doped Semi-Insulating Gan Substrates

In this work, we study the breakdown electric field and resistivity of Fe-doped semi-insulating GaN substrates with various Fe doping concentrations. The substrate with Fe doping concentration of 4×10²⁰ cm⁻³ exhibited an effective lateral breakdown field of 2 MV/cm with a resistivity of more than 10¹²Ωcm. It was found that increasing the Fe concentration was effective to enhance the resistivity and effective lateral breakdown electric field.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量