功率MOSFET P植入区的新设计

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581972

Wen-Bin Yeh, Yi Su, Kung-Yen Lee, Chia-Hui Cheng, Chih-Fang Huang

{"title":"功率MOSFET P植入区的新设计","authors":"Wen-Bin Yeh, Yi Su, Kung-Yen Lee, Chia-Hui Cheng, Chih-Fang Huang","doi":"10.1109/IMFEDK.2018.8581972","DOIUrl":null,"url":null,"abstract":"In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Design of P Implanted Regions for a Power MOSFET\",\"authors\":\"Wen-Bin Yeh, Yi Su, Kung-Yen Lee, Chia-Hui Cheng, Chih-Fang Huang\",\"doi\":\"10.1109/IMFEDK.2018.8581972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文设计了一种新型的垂直功率MOSFET结构，与传统垂直功率MOSFET相比，具有更高的击穿电压和更低的比导态电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Novel Design of P Implanted Regions for a Power MOSFET

In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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