雾相气相沉积法制备的Ga-Sn-O薄膜热电转换装置

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581956

Tatsuya Aramaki, Ryuki Nomura, T. Matsuda, M. Kimura, K. Umeda, M. Uenuma, Y. Uraoka

{"title":"雾相气相沉积法制备的Ga-Sn-O薄膜热电转换装置","authors":"Tatsuya Aramaki, Ryuki Nomura, T. Matsuda, M. Kimura, K. Umeda, M. Uenuma, Y. Uraoka","doi":"10.1109/IMFEDK.2018.8581956","DOIUrl":null,"url":null,"abstract":"We proposed a GTO thin film thermoelectric conversion devise by the mist CVD method. The thermoelectric conversion devise with the best performance had a Seebeck coefficient of −193[µV/K], a conductivity of 6.35[S/cm], and a PF of 0.0179 [mW/mK2].","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method\",\"authors\":\"Tatsuya Aramaki, Ryuki Nomura, T. Matsuda, M. Kimura, K. Umeda, M. Uenuma, Y. Uraoka\",\"doi\":\"10.1109/IMFEDK.2018.8581956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We proposed a GTO thin film thermoelectric conversion devise by the mist CVD method. The thermoelectric conversion devise with the best performance had a Seebeck coefficient of −193[µV/K], a conductivity of 6.35[S/cm], and a PF of 0.0179 [mW/mK2].\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种采用雾状CVD法的GTO薄膜热电转换装置。性能最佳的热电转换器件的塞贝克系数为−193[µV/K]，电导率为6.35[S/cm]， PF为0.0179 [mW/mK2]。

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Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method

We proposed a GTO thin film thermoelectric conversion devise by the mist CVD method. The thermoelectric conversion devise with the best performance had a Seebeck coefficient of −193[µV/K], a conductivity of 6.35[S/cm], and a PF of 0.0179 [mW/mK2].

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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