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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Effect of Post-Gate Deposition Annealing on the Electrical Characteristics of AlGaN/GaN HEMTs with p-GaN Gate 栅极后沉积退火对p-GaN栅极AlGaN/GaN hemt电学特性的影响
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581948
S. Kawabata, J. Asubar, H. Tokuda, M. Kuzuhara
{"title":"Effect of Post-Gate Deposition Annealing on the Electrical Characteristics of AlGaN/GaN HEMTs with p-GaN Gate","authors":"S. Kawabata, J. Asubar, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2018.8581948","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581948","url":null,"abstract":"Aiming towards fail-safe normally-off operation we have fabricated AlGaN/GaN HEMTs with p-GaN gate. From device transfer characteristics, we have confirmed that threshold voltage (Vth) was shifted towards the positive direction with increasing p-GaN layer thickness and this amount of shift was further enhanced by post-gate deposition annealing.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124033124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectric Thin Films and Electron Devices 铁电薄膜和电子器件
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/imfedk.2018.8581945
M. Okuyama
{"title":"Ferroelectric Thin Films and Electron Devices","authors":"M. Okuyama","doi":"10.1109/imfedk.2018.8581945","DOIUrl":"https://doi.org/10.1109/imfedk.2018.8581945","url":null,"abstract":"","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115229130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscopic Imaging of Inversion Layer Formation in Insulator/Semiconductor Structure by Scanning Capacitance Transient Microscopy 用扫描电容瞬态显微镜观察绝缘体/半导体结构中反转层形成的显微成像
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581941
Hidenobu Mori, H. Yoshida
{"title":"Microscopic Imaging of Inversion Layer Formation in Insulator/Semiconductor Structure by Scanning Capacitance Transient Microscopy","authors":"Hidenobu Mori, H. Yoshida","doi":"10.1109/IMFEDK.2018.8581941","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581941","url":null,"abstract":"Microscopic characterization of generation lifetimes in a SiO2/Si structure has been carried out using scanning capacitance microscopy (SCM). Generation lifetimes could be investigated by monitoring the capacitance transient due to inversion layer formation. The validity of local capacitance transient measurements by SCM was verified by comparing with the results of conventional capacitance transient measurements using a MOS capacitor. Furthermore, it was demonstrated that SCM can be used for imaging of the formation process of the inversion layer on a nanometer scale.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134001235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Highly-Sensitive Transient Photocapacitance Mesurement System for Deep Defects in Boron-Doped Diamond (100) Films 掺硼金刚石(100)薄膜深度缺陷高灵敏度瞬态光电容测量系统的研制
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581973
Kenta Miyawaki, R. Yamashita, Taishi Kodama, O. Maida
{"title":"Development of Highly-Sensitive Transient Photocapacitance Mesurement System for Deep Defects in Boron-Doped Diamond (100) Films","authors":"Kenta Miyawaki, R. Yamashita, Taishi Kodama, O. Maida","doi":"10.1109/IMFEDK.2018.8581973","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581973","url":null,"abstract":"We have developed a highly-sensitive transient photocapacitance measurement system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microwave-plasma chemical vapor deposition method. The developed transient photocapacitance measurement system has both a low detection limit of less than 0.5 fF for changes in the photocapacitance and a low measurement temperature drift of less than 0.03 K in 12 h. By using the transient photocapacitance measurement system, we have successfully found an acceptor-type defect around 1.2 eV above the valence band maximum for the B-doped diamond film.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116336127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature 直接键合SiC/Si结特性与键合温度的关系
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581968
K. Shimozato, J. Liang, N. Shigekawa, M. Arai
{"title":"Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature","authors":"K. Shimozato, J. Liang, N. Shigekawa, M. Arai","doi":"10.1109/IMFEDK.2018.8581968","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581968","url":null,"abstract":"We measure electrical characteristics and die shear strength of directly-bonded n-4H-SiC/p+-Si junction with emphasis on their dependence on the annealing condition during bonding. In the bonding process, we perform lower-temperature annealing at the first step and higher-temperature one at the second step. By increasing annealing temperature at the first step, the impurity concentration obtained by C-V measurement gets close to the impurity concentration of SiC and the bonding strength become larger. These results show that directly-bonded SiC/Si junction characteristics depend on the annealing temperature at the first (lower-temperature) step in the bonding process.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128416339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stable Fabrication of High Breakdown Voltage Mesa-Structure Vertical GaN p-n Junction Diodes Using Electrochemical Etching 利用电化学蚀刻稳定制备高击穿电压台面结构垂直GaN p-n结二极管
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581962
H. Ohta, N. Asai, T. Mishima, F. Horikiri, Y. Narita, Takehiro Yoshida
{"title":"Stable Fabrication of High Breakdown Voltage Mesa-Structure Vertical GaN p-n Junction Diodes Using Electrochemical Etching","authors":"H. Ohta, N. Asai, T. Mishima, F. Horikiri, Y. Narita, Takehiro Yoshida","doi":"10.1109/IMFEDK.2018.8581962","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581962","url":null,"abstract":"A wet etching has been performed using an electrochemical etching method to fabricate mesa-structure vertical GaN p-n junction diodes. In case of conventional dry etching, the breakdown voltages of the p-n diodes showed scattered values probably due to local concentration of electric field by roughness at the side wall of the mesa. Smooth and damage-free surface have been obtained by the wet etching, which has enabled higher and stable the breakdown voltages.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124070392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of GTO Film Deposited Using mistCVD Method 雾化cvd法沉积GTO薄膜的评价
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581944
Yuta Takishita, Ryugo Okamoto, M. Kimura, T. Matsuda
{"title":"Evaluation of GTO Film Deposited Using mistCVD Method","authors":"Yuta Takishita, Ryugo Okamoto, M. Kimura, T. Matsuda","doi":"10.1109/IMFEDK.2018.8581944","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581944","url":null,"abstract":"We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using mist chemical vapor deposition (CVD). The field effect mobility is 0.30 cm<sup>2</sup>. V<sup>−1</sup>. S<sup>−1</sup> and the threshold voltage is 12.7 V. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131099768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Brain-Inspired Computing with Spintronics Devices 用自旋电子学设备进行大脑启发计算
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581955
S. Tsunegi, J. Torrejon, M. Riou, Flavio Abreu Araujo, V. Cros, J. Grollier, K. Yakushiji, A. Fukushima, S. Yuasa, H. Kubota
{"title":"Brain-Inspired Computing with Spintronics Devices","authors":"S. Tsunegi, J. Torrejon, M. Riou, Flavio Abreu Araujo, V. Cros, J. Grollier, K. Yakushiji, A. Fukushima, S. Yuasa, H. Kubota","doi":"10.1109/IMFEDK.2018.8581955","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581955","url":null,"abstract":"Neural networks and artificial intelligence utilizing artificial neurons and synapses are attracting much attention. Spintronic devices are considered to be suitable for mimicking artificial synapses and artificial neurons because of nonvolatility of information and rich nonlinearity of spin dynamics. We focused on the nonlinearity of spin dynamics and formed a virtual artificial neural network by using the time multiplexing method. By using reservoir computing for learning rules, we succeeded in speech recognition with a high recognition rate of 99.6%. These results pave the way for hardware implementation of artificial intelligence.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132357920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of Memristor Characteristic Device Using In-Ga-Zn-O Thin Film In-Ga-Zn-O薄膜忆阻器特性器件的研制
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581953
Ayata Kurasaki, Sumio Sugisaki, R. Tanaka, M. Kimura, T. Matsuda
{"title":"Development of Memristor Characteristic Device Using In-Ga-Zn-O Thin Film","authors":"Ayata Kurasaki, Sumio Sugisaki, R. Tanaka, M. Kimura, T. Matsuda","doi":"10.1109/IMFEDK.2018.8581953","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581953","url":null,"abstract":"In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by physical vapor deposition (PVD). The AI/IGZO/ Al cell device showed the bipolar switching characteristic of a switching voltage 2 and reproducibility 10.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123773295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses 电容器型突触用(Bi, La)4Ti3012薄膜的评价
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI: 10.1109/IMFEDK.2018.8581939
Yuta Miyabe, Isato Ogawa, M. Kimura, E. Tokumitsu, K. Haga, Isao Horiuchi
{"title":"Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses","authors":"Yuta Miyabe, Isato Ogawa, M. Kimura, E. Tokumitsu, K. Haga, Isao Horiuchi","doi":"10.1109/IMFEDK.2018.8581939","DOIUrl":"https://doi.org/10.1109/IMFEDK.2018.8581939","url":null,"abstract":"We evaluated (Bi, La)4Ti3O12(BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"265 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114526305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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