Evaluation of GTO Film Deposited Using mistCVD Method

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581944

Yuta Takishita, Ryugo Okamoto, M. Kimura, T. Matsuda

引用次数: 0

Abstract

We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using mist chemical vapor deposition (CVD). The field effect mobility is 0.30 cm². V⁻¹. S⁻¹ and the threshold voltage is 12.7 V. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.

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雾化cvd法沉积GTO薄膜的评价

我们成功地用雾化学气相沉积(CVD)技术制备了用于薄膜晶体管(TFT)的Ga-Sn-O (GTO)薄膜。场效应迁移率为0.30 cm2。V−1。S−1，阈值电压为12.7 V。这一结果表明了制备不含稀有金属的非晶金属氧化物半导体的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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