用扫描电容瞬态显微镜观察绝缘体/半导体结构中反转层形成的显微成像

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581941

Hidenobu Mori, H. Yoshida

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引用次数: 0

摘要

利用扫描电容显微镜(SCM)对SiO2/Si结构的生成寿命进行了微观表征。通过监测由于反转层形成而产生的电容瞬变，可以研究发电寿命。通过与传统MOS电容局部电容瞬态测量结果的比较，验证了单片机局部电容瞬态测量的有效性。此外，还证明了单片机可以在纳米尺度上对反转层的形成过程进行成像。

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Microscopic Imaging of Inversion Layer Formation in Insulator/Semiconductor Structure by Scanning Capacitance Transient Microscopy

Microscopic characterization of generation lifetimes in a SiO2/Si structure has been carried out using scanning capacitance microscopy (SCM). Generation lifetimes could be investigated by monitoring the capacitance transient due to inversion layer formation. The validity of local capacitance transient measurements by SCM was verified by comparing with the results of conventional capacitance transient measurements using a MOS capacitor. Furthermore, it was demonstrated that SCM can be used for imaging of the formation process of the inversion layer on a nanometer scale.

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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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