Development of Memristor Characteristic Device Using In-Ga-Zn-O Thin Film

Abstract

In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by physical vapor deposition (PVD). The AI/IGZO/ Al cell device showed the bipolar switching characteristic of a switching voltage 2 and reproducibility 10.