电容器型突触用(Bi, La)4Ti3012薄膜的评价

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581939

Yuta Miyabe, Isato Ogawa, M. Kimura, E. Tokumitsu, K. Haga, Isao Horiuchi

{"title":"电容器型突触用(Bi, La)4Ti3012薄膜的评价","authors":"Yuta Miyabe, Isato Ogawa, M. Kimura, E. Tokumitsu, K. Haga, Isao Horiuchi","doi":"10.1109/IMFEDK.2018.8581939","DOIUrl":null,"url":null,"abstract":"We evaluated (Bi, La)4Ti3O12(BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"265 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses\",\"authors\":\"Yuta Miyabe, Isato Ogawa, M. Kimura, E. Tokumitsu, K. Haga, Isao Horiuchi\",\"doi\":\"10.1109/IMFEDK.2018.8581939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We evaluated (Bi, La)4Ti3O12(BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"265 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们评估了(Bi, La)4Ti3O12(BLT)薄膜用于电容型突触。采用溶胶-凝胶法制备铁电薄膜。利用索耶-塔电路对铁电薄膜的磁滞特性进行了评价。结果表明，铁电薄膜的薄膜厚度越大，其作为突触的作用越大。

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Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses

We evaluated (Bi, La)4Ti3O12(BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.

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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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