Ti/HfOx/Pt电阻式随机存取存储器的Hf氧化膜溅射条件依赖性

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581974

°A. Azuma, R. Nakajima, H. Yoshida, T. Shimizu, T. Ito, S. Shingubara

{"title":"Ti/HfOx/Pt电阻式随机存取存储器的Hf氧化膜溅射条件依赖性","authors":"°A. Azuma, R. Nakajima, H. Yoshida, T. Shimizu, T. Ito, S. Shingubara","doi":"10.1109/IMFEDK.2018.8581974","DOIUrl":null,"url":null,"abstract":"We studied Ti/HfOx/Pt ReRAM device switching characteristics as a function of Hf02 sputtering condition. Hf02 films were formed with DC reactive sputtering at various (O2/ Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switching was obtained at (O2/ Ar) flow ratio of 2.0. It is suggested that good switching characteristic is obtained for the device with the Hf02 film of moderate oxygen vacancy concentration.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hf Oxide Film Sputtering Condition Dependence of Ti/HfOx/Pt Resistive Random Access Memory\",\"authors\":\"°A. Azuma, R. Nakajima, H. Yoshida, T. Shimizu, T. Ito, S. Shingubara\",\"doi\":\"10.1109/IMFEDK.2018.8581974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied Ti/HfOx/Pt ReRAM device switching characteristics as a function of Hf02 sputtering condition. Hf02 films were formed with DC reactive sputtering at various (O2/ Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switching was obtained at (O2/ Ar) flow ratio of 2.0. It is suggested that good switching characteristic is obtained for the device with the Hf02 film of moderate oxygen vacancy concentration.\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们研究了Ti/HfOx/Pt ReRAM器件开关特性与Hf02溅射条件的关系。在(O2/ Ar)流量比为0.25 ~ 2.5的条件下，采用直流反应溅射法制备了Hf02薄膜。在(O2/ Ar)流量比为2.0时，可获得最稳定的重复开关。结果表明，采用氧空位浓度适中的Hf02薄膜制备的器件具有良好的开关特性。

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Hf Oxide Film Sputtering Condition Dependence of Ti/HfOx/Pt Resistive Random Access Memory

We studied Ti/HfOx/Pt ReRAM device switching characteristics as a function of Hf02 sputtering condition. Hf02 films were formed with DC reactive sputtering at various (O2/ Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switching was obtained at (O2/ Ar) flow ratio of 2.0. It is suggested that good switching characteristic is obtained for the device with the Hf02 film of moderate oxygen vacancy concentration.

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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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