Ga-Sn-O热电器件的评价

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581963

Yoku Ikeguchi, Kota Imanishi, Ryuki Nomura, M. Kimura, K. Umeda, M. Uenuma

{"title":"Ga-Sn-O热电器件的评价","authors":"Yoku Ikeguchi, Kota Imanishi, Ryuki Nomura, M. Kimura, K. Umeda, M. Uenuma","doi":"10.1109/IMFEDK.2018.8581963","DOIUrl":null,"url":null,"abstract":"A thermoelectric conversion element is a device for converting thermal energy into electric energy. Many thermoelectric materials are toxic and contain rare-metals. Thus we have evaluated thermoelectric effect of Ga-Sn-O (GTO) that is rare-metal free and less toxic. Moreover, how the annealing treatment affects the characteristics. As a result, the power factor was improved by annealing treatment, where the Seebeck coefficient is −284 µ V /K and the power factor is 0.031 mW/mK2 at Ar:O<inf>2</inf> = 20:4 sccm. On the other hand, the carrier density measured using van der Pauw method is 2.25×1020 /cm3 and Hall mobility is 0.88 cm2/Vs.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of Ga-Sn-O Thermoelectric Device\",\"authors\":\"Yoku Ikeguchi, Kota Imanishi, Ryuki Nomura, M. Kimura, K. Umeda, M. Uenuma\",\"doi\":\"10.1109/IMFEDK.2018.8581963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A thermoelectric conversion element is a device for converting thermal energy into electric energy. Many thermoelectric materials are toxic and contain rare-metals. Thus we have evaluated thermoelectric effect of Ga-Sn-O (GTO) that is rare-metal free and less toxic. Moreover, how the annealing treatment affects the characteristics. As a result, the power factor was improved by annealing treatment, where the Seebeck coefficient is −284 µ V /K and the power factor is 0.031 mW/mK2 at Ar:O<inf>2</inf> = 20:4 sccm. On the other hand, the carrier density measured using van der Pauw method is 2.25×1020 /cm3 and Hall mobility is 0.88 cm2/Vs.\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581963\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581963","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

热电转换元件是将热能转换成电能的装置。许多热电材料是有毒的，并且含有稀有金属。因此，我们评价了不含稀有金属且毒性较小的Ga-Sn-O (GTO)的热电效应。此外，退火处理如何影响特性。结果表明，在Ar:O2 = 20:4 sccm时，Seebeck系数为−284µV /K，功率因数为0.031 mW/mK2。另一方面，范德保法测得的载流子密度为2.25×1020 /cm3，霍尔迁移率为0.88 cm2/Vs。

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Evaluation of Ga-Sn-O Thermoelectric Device

A thermoelectric conversion element is a device for converting thermal energy into electric energy. Many thermoelectric materials are toxic and contain rare-metals. Thus we have evaluated thermoelectric effect of Ga-Sn-O (GTO) that is rare-metal free and less toxic. Moreover, how the annealing treatment affects the characteristics. As a result, the power factor was improved by annealing treatment, where the Seebeck coefficient is −284 µ V /K and the power factor is 0.031 mW/mK² at Ar:O2 = 20:4 sccm. On the other hand, the carrier density measured using van der Pauw method is 2.25×10²⁰ /cm³ and Hall mobility is 0.88 cm²/Vs.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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